Page 1
STP4435A
P Channel Enhancement Mode MOSFET
10A
-
DESCRIPTION
STP4435A is the P-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as LCD backlight, notebook
computer power management, and other battery powered circuits.
PIN CONFIGURATION
SOP-8
PART MARKING
SOP-8
FEATURE
z -30V/-9.2A, R
@V
z -30V/-7.0A, R
@V
z Super high density cell design for
extremely low R
z Exceptional on-resistance and maximum
DC current capability
z SOP-8 package design
= 22mΩ (Typ.)
DS(ON)
GS =-10V
= 30mΩ
DS(ON)
GS = -4.5V
DS(ON)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4435A 2007. V1
Page 2
STP4435A
P Channel Enhancement Mode MOSFET
10A
-
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter Symbol
Drain-Source Voltage V
Gate-Source Voltage V
A=25℃
Continuous Drain Current
(TJ=150℃)
Pulsed Drain Current IDM -50 A
Continuous Source Current
(Diode Conduction)
Power Dissipation
Operation Junction Temperature TJ -55/150
Storgae Temperature Range T
Thermal Resistance-Junction to Ambient
T
T
=70℃
A
T
A=25℃
T
=70℃
A
-30 V
DSS
GSS
I
D
-2.3 A
I
S
P
D
-55/150
STG
R
θ
JA
Typical Unit
±
20
-10.0
-7.0
2.8
1.8
70
W
℃
℃
℃
V
A
/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4435A 2007. V1
Page 3
STP4435A
P Channel Enhancement Mode MOSFET
10A
-
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter Symbol
Condition Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage V
Gate Leakage Current I
Zero Gate Voltage Drain
Current
On-State Drain Current I
Drain-source On-Resistance R
Forward Tran Conductance
V
(BR)DSS
GS(th)
GSS
I
DSS
TJ=55
D(on)
DS(on)
g
fs
Diode Forward Voltage VSD I
VGS=0V,ID=-250uA -30 V
VDS=VGS,ID=-250 uA -1.0 -3.0 V
V
=0V,VGS=±20V
DS
±
100
nA
VDS=-30V,VGS=0V -1
℃
VDS=-30V,VGS=0V -5
V
VGS=-10V, ID=-9.2A
VGS=-4.5V, ID=-7.0
V
5V,VGS=10V -40 A
DS=-
0.022
0.030
=-10V,ID=-9.0A 24 S
DS
=-2.0A,VGS=0V -0.8 -1.2 V
S
uA
Ω
Dynamic
Total Gate Charge Qg 16 24
=-15V,VGS=-10V
V
Gate-Source Charge Qgs 2.3
Gate-Drain Charge Qgd
Input Capacitance
Output Capacitance
Reverse TransferCapacitance
Ciss 1650
Coss 350
Crss
DS
≣
I
-9.A
D
V
DS =-15V,VGS=0V
f=1MHz
4.5
235
nC
pF
Turn-On Time
Turn-Off Time
t
d(on)
tr
t
d(off)
tf
V
=15V,RL=15Ω
DD
I
=-1.0A,V
D
GEN
=-10V
RG=6Ω
16 30
17 30
nS
65 110
35 80
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4435A 2007. V1
Page 4
STP4435A
P Channel Enhancement Mode MOSFET
10A
-
TYPICAL CHARACTERICTICS (25
℃
Unless Note)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4435A 2007. V1
Page 5
STP4435A
P Channel Enhancement Mode MOSFET
10A
-
TYPICAL CHARACTERICTICS (25℃ Unless Note)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4435A 2007. V1
Page 6
STP4435A
P Channel Enhancement Mode MOSFET
10A
-
SOP-8 PACKAGE OUTLINE
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4435A 2007. V1
Page 7
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