Datasheet STP40N03L-20 Datasheet (SGS Thomson Microelectronics)

STP40N03L-20

N - CHANNEL ENHANCEMENT MODE

”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR

PRELIMINARY DATA

TYPE V

DSS

STP40 N03L-20 30 V < 0.0 2 Ω 40 A

R

DS(on)

I

D

■ TYPICALR

■ AVALANCHERUGGEDTECHNOLOGY

■ 100% AVALANCHETESTED

■ HIGH CURRENTCAPABILITY

o

■ 175

■ HIGH dV/dt CAPABILITY

■ APPLICATIONORIENTED

COPERATINGTEMPERATURE

DS(on)

=0.016 Ω

CHARACTERIZATION

APPLICATIONS

■ HIGH CURRENT, HIGH SPEEDSWITCHING

■ POWERMOTOR CONTROL

■ DC-DC& DC-AC CONVERTERS

■ SYNCRONOUSRECTIFICATION

3

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

I

DM

P

dV/dt(

T

(•) Pulse width limited bysafe operatingarea

March 1996

Drain-source Voltage ( VGS=0) 30 V

DS

Drain- gate Volt age (RGS=20kΩ)30V

DGR

Gat e- source Voltage ± 15 V

GS

I

Drain Curren t (co nt inu ous ) at Tc=25oC40A

D

I

Drain Curren t (co nt inu ous ) at Tc=100oC28A

D

(•) Drain Current (pulsed) 160 A

Tot al Dissipation at Tc=25oC90W

tot

Derating Factor 0.6 W/

1) Peak Diode Recov ery voltage slope 6 V/ns

St orage Temperatur e -65 to 175

stg

T

Max. Operating Junction Temperatur e 175

j

o

C

o

C

o

C

1/7

STP40N03L-20

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sin k

T

AVALANCHE CHARACTERISTICS

Symb o l Para met er Max V alue Uni t

I

AR

E

E

I

AR

Ther mal Resistance Junct ion-case Max
Ther mal Resistance Junct ion-ambient Ma x
Ther mal Resistance Case-s i nk Typ
Maximum Lead Tempera t ure For Solder ing Purpo se

l

Avalanche Current , Repet it iv e or Not-Repe t it ive
(pulse width limi t ed by T

Single Pu lse Avalanc he E nerg y

AS

(starti ng T
Repetitive Avalanche Energy

AR

=25oC, ID=IAR,VDD=25V)

j

(pulse width limi t ed by T

max, δ <1%)

j

max, δ <1%)

j

Avalanche Current , Repet it iv e or Not-Repe t it ive

=100oC, p ulse wid t h limited by Tjmax, δ <1%)

(T

c

1.66

62.5

0.5

300

40 A

300 mJ

75 mJ

28 A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwise specified)

case

OFF

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID= 250 µAVGS=0 30 V

Break dow n Voltage

I

I

DSS

GSS

Zero Gate Voltage
Drain Current (V

GS

Gat e- bod y Leaka ge
Current (V

DS

=0)

=0)

=MaxRating

V

DS

V

=MaxRatingx0.8 Tc= 125oC

DS

V

= ± 15 V ± 100 nA

GS

250

1000µAµA

ON (∗)

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

GS(th )

R

DS(on)

I

D(on)

Gat e Thre shold Volt age VDS=VGSID=250µA11.62V
St at ic Drain-source On

Resistance

VGS= 10V ID=20A

= 10V ID=20A Tc=100oC

V

GS

=5V ID=20A

V

GS

On State Drain Current VDS>I

D(on)xRDS(on)max

0.016

0.019

40 A

0.02

0.04

0.023

VGS=10V

DYNAMIC

Symbol Parameter Test Condition s Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansc on ductance

C

C

C

Input Capac it an ce

iss

Out put Capac itance

oss

Reverse Transfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on)maxID

=20A 15 22 S

VDS=25V f=1MHz VGS= 0 1800

450
180

2300

580
230

Ω
Ω
Ω

pF
pF
pF

2/7

STP40N03L-20

ELECTRICAL CHARACTERISTICS (continued)

SWITCHINGON

Symbol Parameter Test Condition s Min. Typ. Max. Unit

t

d(on)

t

r

Turn-on Time
Rise Time

VDD=15V ID=10A

=4.7 Ω VGS=5V

R

G

(see test cir cuit, figure 3)

(di/dt)

Tur n-on C urr ent Slope VDD=24V ID=20A

on

R

=50 Ω VGS=5V

G

(see test cir cuit, figure 5)

Q

Q

Q

Tot al Gat e Charge

g

Gate-Source Charge

gs

Gat e- Drain Charge

gd

VDD=24V ID=20A VGS=5V 40

SWITCHINGOFF

Symbol Parameter Test Condition s Min. Typ. Max. Unit

t

r(Voff)

t

Off -voltage Rise Time

t

Fall T ime

f

Cross-over Time

c

VDD=24V ID=20A

=4.7 Ω VGS=5V

R

G

(see test cir cuit, figure 5)

SOURCE DRAIN DIODE

20
80

30

100

200 A/ µs

60 n C
10
20

42
45
76

55

60

100

ns
ns

nC
nC

ns
ns
ns

Symbol Parameter Test Condition s Min. Typ. Max. Unit

I

I

SDM

SD

Source-drain Current

(•)

Source-drain Current

40

160

(pulsed)

(∗)ForwardOnVoltage ISD=40A VGS=0 1.5 V

V

SD

t

Q

Reverse Recovery

rr

Time
Reverse Recovery

rr

ISD= 20 A di/ dt = 100 A/µs

=24V Tj= 150oC

V

DD

(see test cir cuit, figure 5)

65

0.12

Charge

I

RRM

Reverse Recovery

4

Current

(∗) Pulsed: Pulse duration =300 µs,duty cycle 1.5 %
(•) Pulse width limited by safe operating area
(

1)I

≤ 40 A, di/dt≤ 300 A/µs, VDD≤ V

SD

(BR)DSS,Tj≤TJMAX

A
A

ns

µC

A

3/7

STP40N03L-20

PSPICEPARAMETERS

SUBCIRCUITCOMPONENTS

Symb o l Para met er Val ue Uni t

S1 ( V14_16<0) (See Power Mosf et Model Subcirc uit ) O N

S2 ( V16_11<0) (See Power Mosf et Model Subcirc uit ) O N
LD Drain Inductance 8 nH
LG Gate I nductance 10 nH

LS S o ur ce In duc t a nc e 10 nH

RDRAI N Drain Resis t anc e 1.9E

RGA T E Gat e Resist ance 1 Ω

CGD Gate Drain Capacitance 3.92 nF
CGS G a t e Source Capacit ance 1.9 nF

ALF A Dr if t Coef icient 1E

RGN Ne gat ive Bias Re sis t a nce 10 KΩ

DIODE DRAIN GATE (Depletion Capacitance)

Symb o l Para met er Val ue Uni t

CJO Z e r o Bias p- n Capacitance 2.7 nF

VJ p-n Potent ial 0.35 V

M p-n Grading Coef f icient 0.55

-2

-3

Ω

-1

V

DIODE DRAIN SOURCE

Symb o l Para met er Val ue Uni t

CJO Z e r o Bias p- n Capacitance 10 nF

VJ p-n Potent ial 0.35 V

M p-n Grading Coef f icient 0.55

TT T ransit Time 20 nsec

N MOSFET

Symb o l Para met er Val ue Uni t

L Channel Length 1 µ Meter

W Channel W i dt h 1 µ Meter

LEVEL Model Index 3

TOX Oxide Thickness 1 Meter
VT O Ze ro Bias Threshold Vo lt age 3. 25 V

U0 Surface Mobility 600 cm

THE T A Mobilit y M odulat i on 0.005 V

Vmax Maximum Drift Velocity 0 Meter/sec

KP Trans Conductance Coeffici ent 15 Amp/ V

For Transient Simulation Applicate U.I.C. (Use Initial Condition) Option

2

/VS

-1

2

4/7

STP40N03L-20

PSPICENETLIST OF THE SUBCIRCUIT

.S UB CKT ST P40N03L-20 1 2 3
*VALUE OF THE PACKAGE IN DUCTANC ES
LS 1 11 10n
LG 2 12 10n
LD 3 13 7n

*RESISTANCE OF THEGATE
PO LYSILI CO N
RG 12 16 1

*EPY AND DRIFT RESISTANC ES
RD 13 14 1.9e-02
EDRI 14 15 POL Y (2 ) (13 14) (13 1 1) 0 0 0 0
1e-3

*CAPAC ITANCE GATE SO UR CE
CGS16111.90n

*OPTIO NAL FO R NEGATIVE GATE BIAS
*S251111116SWITCH
*CGN 51 16 3.92n
*RGN 51 16 10k

*MILLER CAPACIT A NCE
CGD 16 17 3.92n

PowerMosfet ModelSubcircuit

* DEPLETION CAPACITANCE
DGD 17 14 DGD
S1 17 14 16 14 SWI T CH
.MODEL DGDD +IS=
+CJO =2. 6n
+Vj=.1
+M=.6

.MOD EL SWITCH VSW ITCH
+RON=1m
+ROFF=1MEG
+VON=0.1

* OU TP UT CAPACITANC E AND BODY DRAI N DI ODE
DBD 11 14 DBD
.MODEL DBDD
+TT=20n
+CJO =7. 8n
+VJ=.1
+M=.6

* MODELOF THE MOSFET
MMAIN 1 5 16 11 11 MM AIN L=1u W =1u
.MOD EL MMAIN NMOS
+LEVEL= 3
+TOX=1
+VTO=3.25
+uo=600
+THETA=0.005
+VM AX=5e7
+KP= 28
.ENDS

5/7

STP40N03L-20

TO-220 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203

G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

mm inch

E

A

L4

D

F2

F1

G1

H2

G

F

C

D1

L2

Dia.

L5

L7

L6

L9

P011C

6/7

STP40N03L-20

Information furnished is believedto be accurateand reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequencesof use ofsuch informationnor for any infringement of patents or otherrights of third parties which may resultsfrom its use. No
licenseis grantedby implicationor otherwise underany patentor patentrights ofSGS-THOMSONMicroelectronics. Specificationsmentioned
in this publicationare subject to change without notice.This publication supersedes andreplacesall information previously supplied.
SGS-THOMSONMicroelectronics productsarenotauthorizedfor useascriticalcomponents inlife supportdevices or systems withoutexpress
writtenapproval of SGS-THOMSONMicroelectonics.

 1995 SGS-THOMSONMicroelectronics - All Rights Reserved

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