Datasheet STP3NK60ZFP, STP3NK60Z, STD3NK60Z-1, STD3NK60Z, STB3NK60Z Datasheet (SGS Thomson Microelectronics)
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1/15July 2003
STP3NK60Z - STP3NK60ZFP
STB3NK60Z-STD3NK60Z-STD3NK60Z-1
N-CHANNEL600V-3.3Ω -2.4A TO-220/FP/D2PAK/DPAK/IPAK
Zener-Protected SuperMESH™Power MOSFET
■ TYPICAL R
DS
(on) = 3.3 Ω
■ EXTREMELY HIGH d v/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GAT E CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VER Y GOOD MANUFA CTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established stripbased PowerME SH™ layout. In addition to pushing
on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the
most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
■ LI GHTING
ORDERING INFORMATION
TYPE V
DSS
R
DS(on)
I
D
Pw
STP3NK60Z
STP3NK60ZFP
STB3NK60Z
STD3NK60Z
STD3NK60Z-1
600 V
600 V
600 V
600 V
600 V
< 3.6 Ω
< 3.6 Ω
< 3.6 Ω
< 3.6 Ω
< 3.6 Ω
2.4 A
2.4 A
2.4 A
2.4 A
2.4 A
45 W
20 W
45 W
45 W
45 W
SALES TYPE MARKING PACKAGE PACKAGING
STP3NK60Z P3NK60Z TO-220 TUBE
STP3NK60ZFP P3NK60ZFP TO-220FP TUBE
STB3NK60ZT4 B3NK60Z
D
2
PAK
TAPE & REEL
STD3NK60Z-1 D3NK60Z IPAK TUBE
STD3NK60ZT4 D3NK60Z DPAK TAPE & REEL
TO-220 TO-220FP
1
2
3
1
3
DPAK
3
2
1
IPAK
1
3
D2PAK
INTERNAL SCHEMATIC DIAGRAM
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STP3NK60Z /FP - STB3NK60Z - ST D3NK60Z - STD3NK60Z-1
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ABSOLUTE MAXIMUM RATINGS
() Pulse width limited by safe operating area
(1) I
SD
≤2.4 A, di/dt ≤200A/µs, VDD≤ V
(BR)DSS,Tj≤TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back -to-back Zener diodes have specifically been designed t o enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage trans ients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an effi cient and
cost-effective interve nti on to protect the device’s integrity. Thes e integrated Zener diodes thus avoid the
usage of external components.
Symbol Parameter Value Unit
STP3NK60Z
STB3NK60Z
STP3NK60ZFP
STD3NK60Z
STD3NK60Z-1
V
DS
Drain-source Voltage (VGS=0)
600 V
V
DGR
Drain-gate Voltage (RGS=20kΩ)
600 V
V
GS
Gate- source Voltage ± 30 V
I
D
Drain Current (continuous) at TC= 25°C
2.4 2.4 (*) 2.4 (*) A
I
D
Drain Current (continuous) at TC= 100°C
1.51 1.51 (*) 1.51 (*) A
I
DM
()
Drain Current (pulsed) 9.6 9.6 (*) 9.6 (*) A
P
TOT
Total Dissipation at TC= 25°C
45 20 45 W
Derating Factor 0.36 0.16 0.36 W/°C
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 2100 V
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
V
ISO
Insulation Withstand Voltage (DC) - 2500 - V
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-55to150 °C
TO-220
D
2
PAK
TO-220FP
DPAK
IPAK
Rthj-case Thermal Resistance Junction-case Max 2.78 6.25 2.78 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 100 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300 °C
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
2.4 A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, ID=IAR,VDD=50V)
150 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain) 30 V
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STP3NK60Z /FP - STB3NK60Z - ST D 3NK60Z - STD3NK60Z-1
ELECTRICAL CHARACTERISTICS (T
CASE
=25°C UNLESS OTHERWISE SP ECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when VDSincreases from 0 to 80%
V
DSS
.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
ID=1mA,VGS= 0 600 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
=0)
V
DS
= Max Rating
VDS= Max Rating, TC= 125 °C
1
50
µA
µA
I
GSS
Gate-body Leakage
Current (V
DS
=0)
V
GS
= ± 20 V ±10 µA
V
GS(th)
Gate Threshold Voltage
V
DS=VGS,ID
=50µA
3 3.75 4.5 V
R
DS(on)
Static Drain-source On
Resistance
VGS=10V,ID= 1.2 A 3.3 3.6 Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(1) Forward Transconductance VDS=20V,ID= 1.2 A 1.8 S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
=25V,f=1MHz,VGS= 0 311
43
8
pF
pF
pF
C
oss eq.
(3) Equivalent Output
Capacitance
VGS=0,VDS= 0 to 400 V 26 pF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
VDD=300V,ID= 1.5 A
RG= 4.7Ω VGS=10V
(Resistive Load see, Figure 3)
9
14
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=400V,ID= 2.4 A,
V
GS
=10V
11.8
2.6
6.4
nC
nC
nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
VDD= 480 V, ID=3A
R
G
=4.7ΩVGS=10V
(Resistive Load see, Figure 3)
19
14
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 480 V, ID=3A,
RG=4.7Ω, VGS=10V
(Inductive Load see, Figure 5)
11
14
24
ns
ns
ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
2.4
9.6
A
A
VSD(1)
Forward On Voltage
ISD= 2.4 A, VGS=0
1.6 V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 3 A, di/dt = 100A/µs
VDD=35V,Tj= 150°C
(see test circuit, Figure 5)
306
948
6.2
ns
nC
A
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STP3NK60Z /FP - STB3NK60Z - ST D3NK60Z - STD3NK60Z-1
4/15
Output Characteristics
Safe Operating Area
Safe Operating Area For TO-220FP Thermal Impedance For TO-220FP
Thermal I mpedance
Transfer Characteristics
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5/15
STP3NK60Z /FP - STB3NK60Z - ST D 3NK60Z - STD3NK60Z-1
Transconductance
Normalized Gate Threshold Voltage vs Temp.
Static Drain-source On ResistanceTransconductance
Normalized On Resistance vs Temperature
Capacitance VariationsGate Charge vs Gate-source Voltage
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STP3NK60Z /FP - STB3NK60Z - ST D3NK60Z - STD3NK60Z-1
6/15
Maximum Avalanche Energy vs Temperature
Normalized BVDSS vs Temperature
Source-drain Diode F orw ard Characteristics
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7/15
STP3NK60Z /FP - STB3NK60Z - ST D 3NK60Z - STD3NK60Z-1
Fig. 5: Test Circuit F or Inductive Load Swi tchin g
And Diode Recovery Times
Fig. 4: Ga te Charge test Circuit
Fig. 2: Unclamped Induct ive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Lo ad
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STP3NK60Z /FP - STB3NK60Z - ST D3NK60Z - STD3NK60Z-1
8/15
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
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9/15
STP3NK60Z /FP - STB3NK60Z - ST D 3NK60Z - STD3NK60Z-1
L2
A
B
D
E
H
G
L6
¯
F
L3
G1
123
F2
F1
L7
L4
L5
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
TO-220FP MECHANICAL DATA
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STP3NK60Z /FP - STB3NK60Z - ST D3NK60Z - STD3NK60Z-1
10/15
1
DIM.
mm. inch
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
D1 8 0.315
E 10 10.4 0.393
E1 8.5 0.334
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068
M 2.4 3.2 0.094 0.126
R 0.4 0.015
V2 0º 4º
D2PAK MECHANICAL DATA
3
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11/15
STP3NK60Z /FP - STB3NK60Z - ST D 3NK60Z - STD3NK60Z-1
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213
C 0.45 0.60 0.018 0.024
C2 0.48 0.60 0.019 0.024
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.252 0.260
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039
V2 0
o
8
o
0
o
0
o
P032P_B
TO-252 (DPAK) MECHANICAL DATA
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STP3NK60Z /FP - STB3NK60Z - ST D3NK60Z - STD3NK60Z-1
12/15
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
A
C2
C
A3
H
A1
D
L
L2
L1
1 3
= =
B3
B
B6
B2
E
G
= =
= =
B5
2
TO-251 (IPAK) MECHANICAL DATA
0068771-E
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STP3NK60Z /FP - STB3NK60Z - ST D 3NK60Z - STD3NK60Z-1
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*
DPAK FOOTPRINT
* on sales ty pe
DIM.
mm inch
MIN. MAX. MIN. MAX.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22.4 0.881
BASE QTY BULK QTY
2500 2500
REEL MECHANICAL DATA
DIM.
mm inch
MIN. MAX. MIN. MAX.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D 1.5 1.6 0.059 0.063
D1 1.5 0.059
E 1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R 40 1.574
W 15.7 16.3 0.618 0.641
TAPE MECHANICAL DATA
All dimensions
areinmillimeters
All dimensions are in m i llimeters
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14/15
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*
D2PAK FOOTPRINT
* on sales ty pe
DIM.
mm inch
MIN. MAX. MIN. MAX.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197
BASE QTY BULK QTY
1000 1000
REEL MECHANICAL DATA
DIM.
mm inch
MIN. MAX. MIN. MAX.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1. 61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W 23.7 24.3 0.933 0.956
TAPE MECHANICAL DATA
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STP3NK60Z /FP - STB3NK60Z - ST D 3NK60Z - STD3NK60Z-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of u se of such inf ormat ion nor for any in fring ement of p aten ts or othe r ri ghts of th ird p arties whic h may resul t f rom
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved
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