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STP3NC70Z
STP3NC70ZFP
N-CHANNEL 700V - 4.1Ω - 2.5A TO-220/TO-220FP
Zener-Protected PowerMESH™III MOSFET
TYPE V
STP3NC70Z
STP3NC70Z FP
■ TYPICAL R
■ EXTREMELY HIGH dv/dt AND CAPABILITY
DS
DSS
700V
700V
(on) = 4.1Ω
R
DS(on)
< 4.7Ω
< 4.7Ω
I
D
2.5 A
2.5 A
GATE TO - SOURCE ZENER DIODES
■ 100% AVALANCHE TESTED
■ VERY LOW GATE INPUT RESISTANCE
■ GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY™ P ow er
MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes betw een gate and
source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch
applications.
APPLICATIONS
■ SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
■ WELDING EQUIPMENT
TO-220
TO-220FP
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP3NC70Z STP3NC70ZFP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
I
GS
V
ESD(G-S)
dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns
V
ISO
T
stg
T
j
(•)Pu l se width limite d by safe operati ng area
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
700 V
700 V
Gate- source Voltage ± 25 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
(●)
Drain Current (pulsed) 10 10 A
Total Dissipation at TC = 25°C
2.5 2.5 (*) A
1.6 1.6 (*) A
65 35 W
Derating Factor 0.52 0.28 W/°C
Gate-source Current (DC) ±50 mA
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 1.5 KV
Insulation Withstand Voltage (DC) - 2500 V
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
(1) ISD ≤2.5A, di/dt ≤100A/µs, VDD ≤ V
(*) Limited by Maximum Temperature allowed
(BR)DSS
, Tj ≤ T
JMAX
1/10June 2001
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STP3NC70Z/STP3NC70ZFP
THERMA L D ATA
TO-220 TO-220FP
Rthj-case Thermal Resistance Junction-case Max 1.92 3.57 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
∆BV
DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 300 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
Drain-source
= 25 °C, ID = IAR, VDD = 50 V)
j
ID = 250 µA, VGS = 0 700 V
2.5 A
150 mJ
Breakdown Voltage
/∆TJBreakdown Voltage Temp.
ID = 1 mA, VGS = 0 0.8 V/°C
Coefficient
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ±20V ±10 µA
GS
1µA
50 µA
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
= VGS, ID = 250µA
DS
VGS = 10V, ID = 1.25 A
345V
4.1 4.7 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS > I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 50 pF
Reverse Transfer
Capacitance
ID= 1.25A
V
DS
D(on)
x R
DS(on)max,
= 25V, f = 1 MHz, VGS = 0
2S
530 pF
7pF
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STP3NC70Z/STP3NC70ZFP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 11 ns
Total Gate Charge
Gate-Source Charge 4 nC
Gate-Drain Charge 7 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
f
c
Off-voltage Rise Time
Fall Time 33 ns
Cross-over Time 40 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Source-drain Current 2.5 A
(2)
Source-drain Current (pulsed) 10 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 0.6 µC
Reverse Recovery Current 7.5 A
= 350 V, ID = 1.25 A
DD
RG= 4.7Ω VGS = 10V
(see test circuit, Figure 3)
V
= 560V, ID = 2.5A,
DD
VGS = 10V
V
= 560V, ID = 2.5 A,
DD
RG=4.7Ω, V
GS
= 10V
(see test circuit, Figure 5)
ISD = 2.5 A, VGS = 0
I
= 2.5 A, di/dt = 100A/µs,
SD
VDD = 27V, Tj = 150°C
(see test circuit, Figure 5)
14 ns
17 24 nC
16 ns
1.6 V
175 ns
GATE-SOURCE ZENER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Igs=± 1mA (Open Drain) 25 V
Voltage
αT Voltage Thermal Coefficient T=25°C Note(3) 1.3
I
Rz Dynamic Resistance
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1. 5 %.
2. Pulse width li mited by safe operating area .
3. ∆V
= αT (25°-T ) BV
BV
GSO
(25°)
= 50 mA, VGS = 0
D
90 Ω
10
-4
/°C
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally
be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient
and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.
3/10
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STP3NC70Z/STP3NC70ZFP
Safe Operating Area for TO-220
Thermal Impedance for TO-220
Safe Operating Area for TO-220FP
Thermal Impedance for TO-220FP
4/10
Transfer CharacteristicsOutput Characteristics
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STP3NC70Z/STP3NC70ZFP
Transconductance Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Normalized Gate Threshold Voltage vs Temp.
Capacitance Variations
Normalized On Resistance vs Temperature
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STP3NC70Z/STP3NC70ZFP
Source-drain Diode Forward Characteristics
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STP3NC70Z/STP3NC70ZFP
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 4: Gate Charge test Circuit
7/10
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STP3NC70Z/STP3NC70ZFP
E
TO-220 MECHANICAL DATA
DIM.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
A
C
D
8/10
L5
Dia.
L7
D1
L6
L2
L9
F1
G1
F
H2
G
F2
L4
P011C
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TO-220FP MECHANICAL DATA
STP3NC70Z/STP3NC70ZFP
DIM.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
E
A
D
B
L3
L6
L7
F1
F
G1
H
F2
123
L4
L2
L5
G
9/10
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STP3NC70Z/STP3NC70ZFP
10/10
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