Datasheet STP3NC60FP, STP3NC60 Datasheet (SGS Thomson Microelectronics)

STP3NC60

STP3NC60FP

N-CHANNEL 600V - 3.3Ω - 3A TO-220/TO-220FP

PowerMeshII MOSFET

TYPE V

DSS

R

DS(on)

I

D

STP3NC60 600 V <3.6 Ω 3A
STP3NC60FP 600V <3.6 Ω 2A

■ TYPICAL R

■ EXTREMELY HIGH dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ NEW HIGH VOLTAGE BENCHMARK

■ GATE CHARGE MINIMIZED

(on) = 3.3 Ω

DS

DESCRIPTION

The PowerMESHII is the evolution of the first
generation of MESH OVERLAY. The layout re­finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead­ing edge for what concerns swithing speed, gate
charge and ruggedness.

APPLICATIONS

■ HIGH CURRENT, HIGHSPEED SWITCHING

■ SWITH MODE POWER SUPPLIES (SMPS)

■ DC-AC CONVERTERS FORWELDING

EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES ANDMOTOR DRIVER

3

2

1

TO-220

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP3NC60 STP3NC60FP

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

P

TOT

dv/dt (1) Peak Diode Recovery voltage slope 3.5 V/ns

V

ISO

T

stg

T

(•)Pulse width limitedby safe operating area

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)

600 V

600 V
Gate- source Voltage ±30 V
Drain Current (continuos) at TC=25°C
Drain Current (continuos) at TC= 100°C

(●)

Drain Current (pulsed) 12 12(*) A
TotalDissipation at TC=25°C

33A

1.9 1.9(*) A

80 40 W

Derating Factor 0.64 0.32 W/°C

Insulation Withstand Voltage (DC) - 2000
Storage Temperature –60 to 150 °C
Max. Operating Junction Temperature 150 °C

j

(1)ISD≤3A, di/dt ≤100A/µs, VDD≤ V
(*)Limited only by maximum temperature allowed

(BR)DSS,Tj≤TJMAX.

1/9May 2000

STP3NC60/FP

THERMAL DATA

TO-220 TO-220FP

Rthj-case Thermal Resistance Junction-case Max 1.56 3.12 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

Rthc-sink Thermal Resistance Case-sink Typ 0.5 °C/W

T

l

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

Maximum Lead Temperature For Soldering Purpose 300 °C

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

Drain-source
Breakdown Voltage

Zero Gate Voltage
Drain Current (V

Gate-body Leakage
Current (V

=25°C, ID=IAR,VDD=50V)

j

I

= 250 µA, VGS=0

D

= Max Rating

V

DS

=0)

DS

GS

=0)

V

= Max Rating, TC= 125 °C

DS

= ±30V

V

GS

600 V

3A

100 mJ

1 µA

50 µA

±100 nA

ON (1)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Voltage
Static Drain-source On

Resistance

On StateDrain Current

V

DS=VGS,ID

= 10V, ID= 1.5 A

V

GS

V

DS>ID(on)xRDS(on)max,

= 250µA

VGS=10V

234V

3.3 3.6 Ω

3A

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

g

(1)

fs

C

iss

C

oss

C

rss

Forward Transconductance
Input Capacitance

Output Capacitance 57 pF
Reverse Transfer

Capacitance

DS>ID(on)xRDS(on)max,

ID= 1.5A

V

= 25V, f = 1 MHz, VGS=0

DS

2S

400 pF

7pF

2/9

STP3NC60/FP

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

r

Q

Q

gs

Q

gd

Turn-on Delay Time
Rise Time

TotalGate Charge

g

Gate-Source Charge 2.3 nC
Gate-Drain Charge 4.4 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

t

f

c

Off-voltage Rise Time
Fall Time 15 ns
Cross-over Time 21 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Source-drain Current 3 A

(2)

Source-drain Current (pulsed) 12 A

(1)

Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 1.5 µC
Reverse Recovery Current 7.1 A

V

= 300 V,ID= 1.5 A

DD

= 4.7Ω VGS=10V

R

G

(see test circuit, Figure 3)

V

= 480V,ID=3A,

DD

= 10V

V

GS

V

= 480V,ID=3A,

DD

=4.7Ω, VGS= 10V

R

G

(see test circuit, Figure 5)

ISD= 3 A, VGS=0
I

=3 A, di/dt = 100A/µs, V

SD

= 100V, Tj= 150°C
(see test circuit, Figure 5)

DD

9ns
13 ns
13 18.2 nC

13 ns

1.6 V

420 ns

Safe Operating Area for TO-220 Safe Operating Area for TO-220FP

3/9

STP3NC60/FP

Thermal Impedence for TO-220

Output Characteristics

Thermal Impedence for TO-220FP

Transfer Characteristics

Transconductance

4/9

Static Drain-source On Resistance

STP3NC60/FP

Gate Charge vs Gate-source Voltage

Normalized Gate Threshold Voltage vs Temp.

Capacitance Variations

Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteristics

5/9

STP3NC60/FP

Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

6/9

TO-220 MECHANICAL DATA

STP3NC60/FP

DIM.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

MIN. TYP. MAX. MIN. TYP. MAX.

A

C

mm inch

E

D

L5

L7

Dia.

D1

L6

L2

L9

L4

F2

F1

G1

H2

G

F

P011C

7/9

STP3NC60/FP

TO-220FP MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

A

mm inch

E

D

8/9

B

L3

L6

L7

¯

H

L2

F1

F

G1

G

F2

123

L4

STP3NC60/FP

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