Page 1
STP3NB90
®
N - CHANNEL 900V - 4 Ω - 3.5 A - TO-220/TO-220FP
TYPE V
STP3NB90
STP3NB90FP
■
TYPICAL R
■
EXTREMELY HIGH dv/dt CAPABILITY
■
100% AVALANCHE TESTED
■
VERY LOW INTRINSIC CAPACITANCES
■
GATE CHARGE MINIMIZED
DS(on)
DSS
900 V
900 V
= 4
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
Ω
R
DS(on)
< 4.2 Ω
< 4.2 Ω
I
D
3.5 A
3.5 A
STP3NB90FP
PowerMESH MOSFET
TARGET DATA
3
2
1
TO-220 TO-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
APPLICATIONS
■
HIGH CURRENT, HIGH SPEED SWITCH ING
■
SWITCH MODE POWER SUPP LIES (SMPS)
■
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTI BLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP4NB90 STP4NB90FP
V
V
V
I
P
dv/dt(
V
T
(*) Pulse width limited by safe operating area (1) ISD ≤ 3.5 A, di/dt ≤ 200 A/µs, VDD ≤ V
Drain-source Voltage (VGS = 0) 900 V
DS
Drain- gate Voltage (RGS = 20 kΩ)
DGR
Gate-source Voltage ± 30 V
GS
Drain Current (continuous) at Tc = 25 oC 3.5 3.5
I
D
Drain Current (continuous) at Tc = 100 oC 2.2 1.26(*) A
I
D
Drain Current (pulsed) 14 14 A
DM
Total Dissipation at Tc = 25 oC 100 35 W
tot
900 V
(**)
Derating Factor 0.8 0.28 W/
) Peak Diode Recovery voltage slope 4.5 4.5 V/ns
1
Insulation Withstand Voltage (DC) 2000 V
ISO
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
(BR)DSS
, Tj ≤ T
(**) Limited only T
JMAX
JMAX
A
o
C
o
C
o
C
October 1998
1/6
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STP3NB90/FP
THERMAL DATA
TO-220 TO220-FP
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERIST ICS
Symbol Parameter Max Value Unit
I
AR
E
Thermal Resistance Junction-case Max 1.25 3.57
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
max)
j
DD
= 50 V)
62.5
0.5
300
3.5 A
233 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
= 25 oC unless otherwise specified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 250 µA V
D
GS
= 0
900 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 125 oC
DS
V
= ± 30 V
GS
1
50
± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
= VGS ID = 250 µA
DS
345V
Voltage
R
DS(on)
Static Drain-source On
VGS = 10V ID = 1.7 A 4 4.2 Ω
Resistance
I
D(on)
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
3.5 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗) Forward
fs
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 1.7 A 1.6 S
= 0 700
GS
90
7
µA
µA
pF
pF
pF
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STP3NB90/FP
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
Q
Q
Q
Turn-on Time
Rise Time
r
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
V
= 450 V ID = 1.7 A
DD
= 4.7 Ω VGS = 10 V
R
G
V
= 720 V ID = 3.5 A V
DD
= 10 V 21
GS
TBD n s
8
9
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
Off-voltage Rise Time
Fall Time
t
f
Cross-over Time
c
V
= 720V ID = 3.5 A
DD
= 4.7 Ω VGS = 10 V
R
G
TBD n s
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
3.5
14
I
SDM
I
SD
Source-drain Current
(•)
Source-drain Current
(pulsed)
V
(∗) Forward On Voltage ISD = 3.5 A VGS = 0 1.6 V
SD
t
Q
Reverse Recovery
rr
Time
Reverse Recovery
rr
I
= 3.5 A di/dt = 100 A/µs
SD
V
= 100 V Tj = 150 oC
DD
TBD ns
Charge
I
RRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
ns
nC
nC
nC
ns
ns
A
A
µC
A
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E
STP3NB90/FP
TO-220 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
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A
C
D
D1
L2
F1
L5
Dia.
G1
F
F2
L9
G
H2
L7
L6
L4
P011C
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TO-220FP MECHANICAL DAT A
STP3NB90/FP
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
mm inch
A
B
H
E
D
L3
L6
L7
¯
F1
F
G1
G
F2
123
L2
L4
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STP3NB90/FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any in fringe ment o f patents or other rig hts of third par ties wh ich may result from its u se. N o li cen se is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized f or use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1998 STMicroelectro nics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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