Datasheet STP3NB80FP, STP3NB80 Datasheet (SGS Thomson Microelectronics)

STP3NB80



N - CHANNEL 800V - 4.6Ω - 2.6A- TO-220/TO-220FP

TYPE V

STP3NB80
STP3NB80 FP

■ TYPICALR

■ EXTREMELYHIGH dv/dt CAPABILITY

■ 100%AVALANCHETESTED

■ VERYLOW INTRINSIC CAPACITANCES

■ GATECHARGE MINIMIZED

DS(on)

DSS

800 V
800 V

= 4.6

DESCRIPTION

Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.

Ω

R

DS(on)

<6.5Ω
<6.5

Ω

I

D

2.6 A

2.6 A

STP3NB80FP

PowerMESH MOSFET

3

2

1

TO-220 TO-220FP

INTERNAL SCHEMATIC DIAGRAM

3

2

1

APPLICATIONS

■ HIGHCURRENT, HIGHSPEED SWITCHING

■ UNINTERRUPTIBLEPOWERSUPPLY(UPS)

■ DC-DC& DC-AC CONVERTERS FOR

TELECOM,INDUSTRIAL AND CONSUMER
ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

ST P3 NB80 STP 3NB 80FP

V

V

V

I

DM

P

dv/ dt(

V

T

(•) Pulsewidth limited by safe operating area (1)ISD≤ 2.6A, di/dt ≤ 200A/µs,VDD≤ V

••) Limited only by maximum temperature allowed

(

January 1999

Drain-source Voltage (VGS=0) 800 V

DS

Dra in- gate Volt age (RGS=20kΩ)

DGR

Gate -sourc e Volta ge ± 30 V

GS

Drain C urrent (co ntinuous) at Tc=25oC2.62.6(

I

D

Drain C urrent (co ntinuous) at Tc=100oC1.61.6(••) A

I

D

800 V

)A

••

(•) Dra in Cur rent (pu ls ed) 10.4 10.4 A

Total Dissipation at Tc=25oC9035W

tot

Der at in g Fac to r 0.72 0.28 W/

1) P eak Dio de Recovery volt age slope  4.5 V/ns

Insulat ion W ith stand Vo ltage (DC)  2000 V

ISO

St orage T e mperat ur e -65 t o 150

stg

Max. Op erating Junctio n T e m pe rat ure 150

T

j

,Tj≤T

(BR)DSS

JMA

o

C

o

C

o

C

1/9

STP3NB80/FP

THERMAL DATA

TO-220 TO220-FP

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Para meter Max Val ue Uni t

I

AR

E

Ther mal Resis t an ce Junc ti on-cas e Max 1.39 3.57
Ther mal Resis t an ce Junc ti on-ambien t Max

Thermal Resistance Case-sink Typ
Maximum Lead Tem peratu re For Soldering Purp ose

l

Avalanche Cur rent, Repetit iv e or Not - Re petitiv e
(pulse width limited by T

Single Pulse Avalanche En ergy

AS

(starting T

=25oC, ID=IAR,VDD=50V)

j

max)

j

62.5

0.5

300

2.6 A

176 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Condit ions Min. Typ. M ax. Unit

V

(BR)DSS

Drain-sourc e

=250µAVGS=0

I

D

800 V

Break d own V o lt age

I

DSS

I

GSS

Zero Gate Voltage
Drain Cu rr ent (V

GS

Gat e- b ody Le akage
Current (V

DS

=0)

=0)

V

=MaxRating

DS

= Max Rating Tc=125oC

V

DS

=± 30 V

V

GS

1

50

± 100 nA

ON(∗)

Symbol Parameter Test Condit ions Min. Typ. M ax. Unit

V

GS(th)

Gate Threshold

V

DS=VGSID

= 250µA

345V

Voltage

R

DS(on)

Static Drain-source O n

VGS=10V ID= 1 .3 A 4.6 6.5 Ω

Resistanc e

I

D(on)

On S t ate Drain Cur rent VDS>I

D(on)xRDS(on)max

2.6 A

VGS=10V

DYNAMIC

Symbol Parameter Test Condit ions Min. Typ. M ax. Unit

g

(∗)Forward

fs

Tr ansconduc tance

C

C

C

Input Cap ac i t an c e

iss

Out put Capacita nce

oss

Reverse Transfer

rss

Capacitance

VDS>I

D(on)xRDS(on)maxID

=1.3A 1 2 S

VDS=25V f=1MHz VGS=0 440

60

7

575

78

9

µ
µA

pF
pF
pF

A

2/9

STP3NB80/FP

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHINGON

Symbol Parameter Test Condit ions Min. Typ. M ax. Unit

t

d(on)

Q
Q
Q

Turn-on Time

t

Rise Time

r

Total Gate Charge

g

Gat e- Source Cha rge

gs

Gate-Drain Charge

gd

VDD= 400 V ID=1.3A

=4.7 Ω VGS=10V

R

G

VDD=640 V ID=3A VGS=10V 17

12
10

6.5

7.5

17
14

24 nC

SWITCHINGOFF

Symbol Parameter Test Condit ions Min. Typ. M ax. Unit

t

r(Voff)

t

t

Off -voltage Rise Time
Fall Time

f

Cross-ov er Time

c

VDD= 640 V ID=3 A

=4.7 Ω VGS=10V

R

G

15
17
22

21
24
31

SOURCEDRAINDIODE

Symbol Parameter Test Condit ions Min. Typ. M ax. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operatingarea

Source-drain Curr ent

(•)

Source-drain Curr ent

2.6

10.4

(pulsed)

(∗) For ward O n V oltage ISD=2.6A VGS=0 1.6 V

Reverse Recov er y

rr

Time
Reverse Recov er y

rr

=2.6A di/dt=100A/µs

I

SD

V

= 100 V Tj=150oC

DD

650

2.8
Charge
Reverse Recov er y

8.5
Current

ns
ns

nC
nC

ns
ns
ns

A
A

ns

µC

A

SafeOperating Area for TO-220 SafeOperating Area for TO-220FP

3/9

STP3NB80/FP

ThermalImpedancefor TO-220

OutputCharacteristics

ThermalImpedanceforTO-220FP

TransferCharacteristics

Transconductance

4/9

Static Drain-sourceOn Resistance

STP3NB80/FP

Gate Charge vs Gate-sourceVoltage

Normalized Gate ThresholdVoltage vs
Temperature

CapacitanceVariations

Normalized On Resistance vsTemperature

Source-drainDiode Forward Characteristics

5/9

STP3NB80/FP

Fig. 1:

UnclampedInductive Load Test Circuit

Fig. 3: SwitchingTimes Test Circuits For
ResistiveLoad

Fig. 2:

UnclampedInductive Waveform

Fig. 4: Gate Charge test Circuit

Fig. 5:

Test CircuitFor InductiveLoad Switching

And Diode Recovery Times

6/9

TO-220 MECHANICAL DATA

STP3NB80/FP

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203

G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

mm inch

E

A

L4

D

F2

F1

G1

H2

G

F

P011C

C

D1

L2

Dia.

L5

L7

L6

L9

7/9

STP3NB80/FP

TO-220FP MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

E

A

D

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L4

8/9

STP3NB80/FP

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
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