Page 1
STP3NB60
STP3NB60FP
N - CHANNEL ENHANCEMENT MODE
PowerMESH MOSFET
TYPE V
STP3NB60
STP3NB60FP
■ TYPICALR
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHETESTED
■ VERYLOW INTRINSICCAPACITANCES
■ GATECHARGEMINIMIZED
DS(on)
DSS
600 V
600 V
=3.3 Ω
R
DS(on)
<3.6 Ω
<3.6Ω
I
D
3.3 A
2.2 A
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEEDSWITCHING
■ SWITCHMODEPOWER SUPPLIES(SMPS)
■ DC-ACCONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE
3
2
1
TO-220 TO-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symb o l Para meter Value Uni t
ST P3 NB60 ST P3NB 60FP
V
V
V
I
DM
P
dv/dt(
V
T
March 1998
Drain-source V oltage (VGS=0) 600 V
DS
DGR Drain- gate Voltage ( R
Gat e- source Volt age ± 30 V
GS
I
Drain Current ( c on t in uous) a t Tc=25oC3.32.2A
D
Drain Current ( c on t in uous) a t Tc=100oC2.11.4A
I
D
=20kΩ)
GS
600 V
(•) Drain Cur rent (pulsed) 13.2 13.2 A
Tot al D iss ip at i on at Tc=25oC8035W
tot
Derat in g Factor 0.64 0.28 W/
1) Peak Diode Rec ov er y volt age slope 4.5 4.5 V/ns
Ins ulation W it hsta nd V oltage (DC) 2000 V
ISO
Sto rage Tempe rature -65 to 150
stg
T
Max. Operat in g J unctio n Te m peratu re 150
j
o
C
o
C
o
C
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STP3NB60/FP
THERMAL DATA
TO-220 TO220-FP
R
thj-case
R
thj-amb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symbol Para met e r Max Value Uni t
I
AR
E
Ther mal Resist ance Junctio n-c a se Max 1.56 3.57
Ther mal Resist ance Junctio n-ambient Max
Ther mal Resist ance Case-sink T yp
Maximum Lea d T e mperat u re Fo r S oldering Purp os e
l
Avalanche Curre nt , Repet itive o r Not- Re petitive
(pulse width limited b y T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max, δ <1%)
j
62.5
0.5
300
3.3 A
100 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
V
(BR)DSS
Drain-sourc e
=250µAVGS=0
I
D
600 V
Breakdown Voltage
I
DSS
I
GSS
Zer o G at e Volt age
Drain Cur rent (V
GS
Gat e-body Le akage
Current (V
DS
=0)
=0)
=MaxRating
V
DS
V
=MaxRating Tc=125oC
DS
= ± 30 V
V
GS
1
50
± 100 nA
ON (∗)
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
V
GS(th )
Gate Threshold
V
DS=VGSID
=250µA
345V
Voltage
R
DS(on)
Stati c D rain-source On
VGS=10V ID= 1.6 A 3.3 3.6 Ω
Resistance
I
D(on)
On St at e D rain Cu rr e nt VDS>I
D(on)xRDS(on)max
3.3 A
VGS=10V
DYNAMIC
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansconductanc e
C
C
C
Input Capacit an c e
iss
Out put C apa c itance
oss
Reverse T rans fer
rss
Capa cit an c e
VDS>I
D(on)xRDS(on)maxID
=1.6A 1.2 2 S
VDS=25V f=1MHz VGS= 0 400
57
7
520
77
9
µA
µA
pF
pF
pF
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Page 3
STP3NB60/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
t
d(on)
Turn-on T ime
r
Rise T ime
t
VDD=300V ID=1.6A
=4.7 Ω VGS=10V
R
G
11
7
(see test circuit, figure 3)
Q
Q
Q
Total Gate Charge
g
Gat e-Sour ce Charge
gs
Gate-Drain Charge
gd
VDD=480V ID=3.3A VGS=10V 15
6.2
5.6
SWITCHINGOFF
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
t
r(Voff)
t
t
Of f - voltage Rise T im e
Fall Time
f
Cross-ov er Tim e
c
VDD=480V ID=3.3A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 5)
11
13
18
SOURCE DRAIN DIODE
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration =300 µs, duty cycle1.5 %
(•) Pulse width limited by safe operating area
Source-drain Current
(•)
Source-drain Current
(pulsed)
(∗) For ward On V o lt age ISD=3.3A VGS=0 1.6 V
Reverse R ecovery
rr
Time
Reverse R ecovery
rr
= 3.3 A d i/ dt = 100 A /µs
I
SD
=100V Tj=150oC
V
DD
(see test circuit, figure 5)
500
2.1
Charge
Reverse R ecovery
8.5
Current
17
11
22 nC
16
18
25
3.3
13.2
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µC
A
Safe Operating Areafor TO-220 Safe Operating Area for TO-220FP
3/9
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STP3NB60/FP
ThermalImpedance for TO-220
OutputCharacteristics
ThermalImpedance forTO-220FP
TransferCharacteristics
Transconductance
4/9
StaticDrain-sourceOn Resistance
Page 5
STP3NB60/FP
GateCharge vs Gate-sourceVoltage
Normalized GateThreshold Voltage vs
Temperature
CapacitanceVariations
Normalized On Resistancevs Temperature
Source-drainDiode Forward Characteristics
5/9
Page 6
STP3NB60/FP
Fig. 1: Unclamped InductiveLoad Test Circuit
Fig. 3: SwitchingTimesTest CircuitsFor
ResistiveLoad
Fig. 2: Unclamped InductiveWaveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For InductiveLoad Switching
And Diode RecoveryTimes
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TO-220 MECHANICAL DATA
STP3NB60/FP
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
E
A
L4
D
F2
F1
G1
H2
G
F
C
D1
L2
Dia.
L5
L7
L6
L9
P011C
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STP3NB60/FP
TO-220FP MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
mm inch
E
A
D
B
L3
L6
L7
¯
F1
F
G1
H
G
F2
123
L2
L4
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STP3NB60/FP
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents orother rights of third parties which may results from itsuse. No
license is granted by implication or otherwise under any patent orpatent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in thispublication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics productsarenot authorizedfor use as critical componentsin life support devices orsystems withoutexpress
written approval ofSGS-THOMSON Microelectonics.
1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom -U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
...
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