Page 1
STP3NB100
STP3NB100FP
N - CHANNEL 1000V - 5.3
TYPE V
STP3NB10 0
STP3NB10 0FP
■ TYPICALR
■ EXTREMELYHIGH dv/dt CAPABILITY
■ 100%AVALANCHETESTED
■ VERYLOW INTRINSIC CAPACITANCES
■ GATECHARGE MINIMIZED
DS(on)
DSS
1000 V
1000 V
= 5.3
DESCRIPTION
Using the latest high voltageMESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
R
DS(on)
<6Ω
<6
Ω
I
D
3A
3A
Ω
Ω
- 3 A - TO-220/TO-220FP
PowerMESH MOSFET
TARGET DATA
3
2
1
TO-220 TO-220FP
INTERNAL SCHEMATIC DIAGRAM
3
2
1
APPLICATIONS
■ HIGHCURRENT, HIGH SPEED SWITCHING
■ SWITCHMODE POWER SUPPLIES(SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
ST P3NB100 ST P3NB100FP
V
V
V
I
DM
P
dv/ dt(
V
T
(•) Pulse width limited by safe operating area (1)I
**) Limited only by T
(
October 1998
Drain-source Voltage (VGS=0) 1000 V
DS
Dra in- gate V oltage ( RGS=20kΩ)
DGR
Gate -sourc e Volta ge ± 30 V
GS
Drain C urrent (co ntinuous) at Tc=25oC 3 3(**) A
I
D
Drain C urrent (co ntinuous) at Tc=100oC1.91.1A
I
D
1000 V
(•) Dra in C urrent (pu lsed) 12 12 A
Total Dissipation at Tc=25oC 100 35 W
tot
Derating Factor 0.8 0.28 W/
1) P eak Diode Recovery voltage s lop e 4.5 4.5 V/ns
Insulat ion W ith stand Vo ltage (DC) 2000 V
ISO
St orage T e mperat ur e -65 t o 150
stg
Max. Opera t ing Junc t ion Te mperatu re 150
T
j
MAX
≤
3
Α,
≤
di/dt
SD
200 A/µs, V
≤
DD
V
(BR)DSS
,Tj≤T
JMAX
o
C
o
C
o
C
1/6
Page 2
STP3NB100/FP
THERMAL DATA
TO-220 TO220-FP
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Para meter Max Val ue Uni t
I
AR
E
Ther mal Resis t an ce Junc ti on-cas e Max 1.25 3.57
Ther mal Resis t an ce Junc ti on-ambien t Max
Thermal Resistance Case-sink Typ
Maximum Lead T em peratu r e For Soldering Purp os e
l
Avalanche Current, Re petitive or Not -Re petitiv e
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max)
j
62.5
0.5
300
3A
244 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
V
(BR)DSS
Drain-sourc e
=250µAVGS=0
I
D
1000 V
Break d own Vo lt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Curr ent (V
GS
Gat e- b ody Leaka ge
Current (V
DS
=0)
=0)
V
=MaxRating
DS
= Max Rating Tc=125oC
V
DS
=± 30 V
V
GS
1
50
± 100 nA
ON(∗)
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
V
GS(th)
Gate Threshold
V
DS=VGSID
= 250µA
345V
Voltage
R
DS(on)
Static Drain-source O n
VGS=10V ID= 1 .5 A 5.3 6 Ω
Resistanc e
I
D(on)
On S t ate Drain Current VDS>I
D(on)xRDS(on)max
3A
VGS=10V
DYNAMIC
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
g
(∗)Forward
fs
Tr ansconduc tance
C
C
C
Input Capacitan ce
iss
Out put Capacit ance
oss
Reverse Transfer
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
=1.5A 1.5 S
VDS=25V f=1MHz VGS=0 700
80
4
µ
µA
pF
pF
pF
A
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Page 3
STP3NB100/FP
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGON
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
t
d(on)
Q
Q
Q
Turn-on Time
t
Rise Time
r
Total Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
VDD= 500 V ID=1.5A
=4.7 Ω VGS=10V
R
G
VDD= 800 V ID=3A VGS=10V 21
TBD ns
8
9
SWITCHINGOFF
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
t
r(Voff)
t
t
Off -voltage Rise Time
Fall Time
f
Cross-ov er Tim e
c
VDD= 800V ID=3A
=4.7 Ω VGS=10V
R
G
TBD ns
SOURCEDRAINDIODE
Symbol Parameter Test Condit ions Min. Typ. M ax. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operatingarea
Source-drain Current
(•)
Source-drain Current
3
12
(pulsed)
(∗) F or ward O n Volt age ISD=3A VGS=0 1.6 V
Reverse Recov er y
rr
Time
Reverse Recov er y
rr
= 3 A di/d t = 100 A/µs
I
SD
= 100 V Tj=150oC
V
DD
TBD ns
Charge
Reverse Recov er y
Current
ns
nC
nC
nC
ns
ns
A
A
µ
A
C
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Page 4
STP3NB100/FP
TO-220 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
E
A
L4
D
F2
F1
G1
H2
G
F
P011C
C
D1
L2
Dia.
L5
L7
L6
L9
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Page 5
TO-220FP MECHANICAL DATA
STP3NB100/FP
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
mm inch
E
A
D
B
L3
L6
L7
¯
F1
F
G1
H
G
F2
123
L2
L4
5/6
Page 6
STP3NB100/FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
1998 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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