Datasheet STP3NA50FI, STP3NA50 Datasheet (SGS Thomson Microelectronics)

STP3NA50

STP3NA50FI

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

TYPE V

STP 3NA50
STP 3NA50FI

■ TYPICAL R

■ ± 30V GATE TO SOURCE VOLTAGE RATING

■ 100% AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100

■ LOW INTRINSIC CAPACITANCES

■ GATE GHARGE MINIMIZED

■ REDUCED THRESHOLD VOLTAGE SPREAD

DS(on)

DSS

500 V
500 V

= 2.4 Ω

R

DS(on)

<3Ω
<3Ω

I

D

3.3 A

2.3 A

o

C

DESCRIPTION

This series of POWER MOSFETS represents the
most advanced high voltage technology. The
optimized cell layout coupled with a new
proprietary edge termination concur to give the
device low R

and gate charge, unequalled

DS(on)

ruggedness and superior switching performance.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITCH MODE POWERSUPPLIES (SMPS)

■ DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE

3

2

1

TO-220 ISOWATT220

INTERNAL SCHEMATIC DIAGRAM

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symb o l Paramet er Val u e Unit

ST P3NA50 ST P3NA50FI

V

V

V

I

DM

P

V

T

(•) Pulsewidth limited bysafe operating area

November 1996

Drain - s ource Voltage (VGS=0) 500 V

DS

Drain - gat e Voltage (RGS=20kΩ)500V

DGR

Gate-source Voltage ± 30 V

GS

Drain Current (continuous) at Tc=25oC3.32.3A

I

D

Drain Current (continuous) at Tc=100oC2.1 1.5A

I

D

(•) Drain Current (pulsed) 13.2 13.2 A

Total Di ssipation a t Tc=25oC8040W

tot

Derat ing Factor 0.64 0.32 W/
Ins ulation Withs t and Voltage (DC)  2000 V

ISO

St or a ge Tem perature -65 t o 150

stg

Max. Operating Jun ction T emperature 150

T

j

o
o

o

C

C
C

1/10

STP3NA50/FI

THERMAL DATA

TO-220 ISOW ATT 220

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Uni t

I

AR

E

E

I

AR

Thermal Resistance J unction- c ase Max 1.56 3.12
Thermal Resistance Junc tion-am bie nt Max

Thermal Resistance Cas e-sink Typ
Maximum Lead Temperature For So ldering Purpose

l

Avalanc h e Cu rr ent , Repet itive or Not-Rep etitive
(pulse width limited by Tjmax, δ <1%)

Single Pul se Avalanche Ener gy

AS

(starti ng T
Repetitive Avalanc he Energ y

AR

=25oC, ID=IAR,VDD=50V)

j

(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-Rep etitive

(Tc= 100oC, pulse width l imited by Tjmax, δ <1%)

62.5

0.5

300

3.3 A

55 mJ

2.2 mJ

2.1 A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwisespecified)

case

OFF

Symbol Parameter Te st Condition s Min. Typ. M ax. Unit

V

(BR)DSS

Drain - s ource

ID=250µAVGS= 0 500 V

Break d own Volta ge

I

DSS

I

GSS

Zer o G at e V oltage
Drain Current (VGS=0)

Gat e- body Leakage
Current (V

DS

=0)

VDS=MaxRating
VDS= Max Rating x 0.8 Tc=125oC

= ± 30 V ± 10 0 nA

V

GS

25

250

ON (∗)

Symbol Parameter Te st Condition s Min. Typ. M ax. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage VDS=VGSID=250µA 2.25 3 3.75 V
St at ic Drain-s our ce O n

VGS=10V ID= 1.5 A 2.4 3 Ω

Resistance

I

D(on)

On State Drain Current VDS>I

D(on)xRDS(on)max

3.3 A

VGS=10V

DYNAMIC

Symbol Parameter Te st Condition s Min. Typ. M ax. Unit

(∗)Forward

g

fs

Tr ansconductance

C
C
C

Input Capacitance

iss

Out put Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS>I

D(on)xRDS(on)maxID

=1.5A 1.2 2.2 S

VDS=25V f=1MHz VGS=0 370

62
20

485

81
27

µA
µA

pF
pF
pF

2/10

STP3NA50/FI

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Te st Condition s Min. Typ. M ax. Unit

t

d(on)

(di/dt)

Q
Q
Q

Turn-on T ime

t

Rise Time

r

Turn-on Current S lope VDD=400V ID=3A

on

Total Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

SWITCHING OFF

Symbol Parameter Te st Condition s Min. Typ. Max. Unit

t

r(Voff)

t

Off -voltage Rise Time

t

Fall Time

f

Cross-over Time

c

SOURCE DRAINDIODE

VDD=250V ID=1.5A
RG=18 Ω VGS=10V

14
23

(see test circuit, figure 3)

340 A/µs
RG=18 Ω VGS=10V
(see test circuit, figure 5)

VDD= 400 V ID=3A VGS=10V 21

6
9

VDD=400V ID=3A
RG=18 Ω VGS=10V
(see test circuit, figure 5)

13
11
26

20
30

28 nC

18
16
35

ns
ns

nC
nC

ns
ns
ns

Symbol Parameter Te st Condition s Min. Typ. Max. Unit

I

I

SDM

SD

Source-drain C urrent

(•)

Source-drain C urrent

3.3

13.2

(pulsed)

V

(∗) Forward On V oltage ISD=3.3A VGS=0 1.6 V

SD

t

Reverse Recovery

rr

Time

Q

Reverse Recovery

rr

ISD=3A di/dt=100A/µs
VDD= 100 V Tj=150oC
(see test circuit, figure 5)

350

4.2

Charge

I

RRM

Reverse Recovery

24

Current

(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area

Safe Operating Areas for TO-220 Safe Operating Areas forISOWATT220

A
A

ns

µC

A

3/10

STP3NA50/FI

Thermal ImpedeanceFor TO-220

Derating Curve For TO-220

Thermal ImpedanceFor ISOWATT220

Derating Curve For ISOWATT220

Output Characteristics

4/10

Transfer Characteristics

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

STP3NA50/FI

Temperature

Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs

5/10

STP3NA50/FI

Turn-on Current Slope Turn-off Drain-source Voltage Slope

Cross-over Time Switching Safe Operating Area

Accidental Overload Area Source-drain Diode ForwardCharacteristics

6/10

STP3NA50/FI

Fig. 1: Unclamped Inductive Load Test Circuits

Fig. 3: Switching Times Test Circuits For

Resistive Load

Fig. 2: Unclamped Inductive Waveforms

Fig. 4: Gate Charge Test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Reverse Recovery Time

7/10

STP3NA50/FI

TO-220 MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

E

A

L4

D

F2

F1

G1

H2

G

F

C

D1

L2

Dia.

L5

L7

L6

L9

P011C

8/10

ISOWATT220 MECHANICAL DATA

STP3NA50/FI

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.4 0.7 0.015 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

E

A

D

B

L3

L6

L7

Ø

F1

F

G1

H

G

F2

123

L2

L4

P011G

9/10

STP3NA50/FI

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such informationnor for any infringement of patents or other rightsof third parties which mayresults fromits use. No
licenseis grantedby implication orotherwise underany patent or patentrights ofSGS-THOMSONMicroelectronics. Specifications mentioned
in thispublication aresubject to changewithoutnotice. Thispublicationsupersedes and replacesall informationpreviously supplied.
SGS-THOMSONMicroelectronics products are not authorizedfor use ascriticalcomponents in lifesupport devices or systems without express
writtenapproval ofSGS-THOMSONMicroelectonics.

 1996 SGS-THOMSON Microelectronics - Printedin Italy- AllRightsReserved

Australia- Brazil -Canada -China - France- Germany - HongKong- Italy - Japan- Korea- Malaysia - Malta- Morocco- TheNetherlands -

Singapore - Spain- Sweden- Switzerland- Taiwan- Thailand- UnitedKingdom -U.S.A

SGS-THOMSONMicroelectronics GROUP OFCOMPANIES

.

10/10