Datasheet STP3N100FI, STP3N100 Datasheet (SGS Thomson Microelectronics)

STP3N100

STP3N100FI

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

TYPE V

STP 3N100
STP 3N100FI

■ AVALANCHE RUGGED TECHNOLOGY

■ 100% AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100

■ LOW INPUT CAPACITANCE

■ LOW GATE CHARGE

■ APPLICATION ORIENTED

DSS

1000 V
1000 V

R

DS(on)

<5Ω
<5Ω

I

D

3.5 A
2A

o

C

CHARACTERIZATION

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SWITCH MODE POWER SUPPLIES (SMPS)

■ CONSUMER AND INDUSTRIAL LIGHTING

■ DC-AC INVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLY (UPS)

3

2

1

TO-220 ISOWATT220

INTERNAL SCHEMATIC DIAGRAM

3

2

1

ABSOLUTE MAXIMUM RATINGS

Symb o l Paramet er Val u e Unit

STP 3N100 STP3 N100FI

V

V

V

I

DM

P

V

T

(•) Pulsewidth limitedby safe operatingarea

December 1996

Drain - s ource Voltage (VGS= 0) 1000 V

DS

Drain- gate Voltage (RGS=20kΩ) 1000 V

DGR

Gate-source Voltage ± 20 V

GS

Drain Current (continuous) at Tc=25oC3.52A

I

D

Drain Current (continuous) at Tc=100oC21.2A

I

D

(•) Drain Current (pulsed) 14 14 A

Total Di ssipation a t Tc=25oC 100 40 W

tot

Derat ing Factor 0.8 0.32 W/
Ins ulation Withs t and Voltage (DC)  2000 V

ISO

St or a ge Tem perature -65 t o 150

stg

Max. Operating Jun ction T emperat ure 150

T

j

o
o

o

C

C
C

1/10

STP3N100/FI

THERMAL DATA

TO-220 ISOW ATT 220

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Uni t

I

AR

E

E

I

AR

Thermal Resistance Junction - cas e M ax 1.25 3.12
Thermal Resistance Junction- ambient Max

Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Sol dering Purpose

l

Avalanc he Current
(repetitive o r not-repetitive, Tj=25oC)

Single Pul se A v alanche Energy

AS

(starti ng T
Repetitive Avalanc he Energ y

AR

=25oC, ID=IAR,VDD=25V)

j

(pulse width limited by Tjmax, δ <1%)
Avalanc he Current

(repetitive o r not-repetitive, Tj=100oC)

62.5

0.5

300

3.5 A

130 mJ

6mJ

2A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwise specified)

case

OFF

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

(BR)DSS

Drain - s ource

ID=250µAVGS= 0 1000 V

Break d own Volta ge

I

DSS

I

GSS

Zer o G at e Voltage
Drain Current (VGS=0)

Gat e- body Leakage
Current (V

DS

=0)

VDS=MaxRating
VDS= Max Rating x 0.8 Tc=125oC

= ± 20 V ± 100 nA

V

GS

25

250

ON (∗)

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Voltage VDS=VGSID=250µA234V
St at ic Drain-s our ce O n

Resistance
On State Drain Current VDS>I

VGS=10V ID=1.5A 5Ω

Ω

D(on)xRDS(on)max

3.5 A

VGS=10V

DYNAMIC

Symbol Parameter Test Condition s Min. Typ. Max. Unit

C
C
C

g

Forward

fs

Tr ansconductance
Input Capacitance

iss

Out put Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS>I

D(on)xRDS(on)maxID

=1.5A 1 1.8 S

VDS=25V f=1MHz VGS=0 750

80
25

950
110

40

µA
µA

pF
pF
pF

2/10

STP3N100/FI

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Condition s Min. Typ. Max. Unit

t

d(on)

(di/dt)

Q
Q
Q

Turn-on T ime

t

Rise Time

r

Turn-on Current S lope VDD=600V ID=3.5A

on

Total Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

SWITCHING OFF

Symbol Parameter Test Condition s Mi n. Ty p. Max. Unit

t

r(Voff)

t

Off -voltage Rise Time

t

Fall Time

f

Cross-over Time

c

SOURCE DRAIN DIODE

VDD=400V ID=1.8A
RG=50 Ω VGS=10V

70
70

(see test circuit, figure 3)

100 A/µs
RG=50 Ω VGS=10V
(see test circuit, figure 5)

VDD= 400 V ID=3.5A VGS=10V 48

7

24

VDD=600V ID=3.5A
RG=50 Ω VGS=10V
(see test circuit, figure 5)

90
60

130

90
90

60 nC

115

75

165

ns
ns

nC
nC

ns
ns
ns

Symbol Parameter Test Condition s Mi n. Ty p. Max. Unit

I

I

SDM

SD

Source-drain C urrent

(•)

Source-drain C urrent

3.5
14

(pulsed)

V

t

Q

For ward On Voltage ISD=3.5A VGS=0 2 V

SD

Reverse Recovery

rr

Time
Reverse Recovery

rr

ISD= 3.5 A di/dt = 100 A/µs
VDD= 100 V Tj=150oC
(see test circuit, figure 5)

900

10

Charge

I

RRM

Reverse Recovery

23

Current

(∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5%
(•) Pulse widthlimited by safe operating area

Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220

A
A

ns

µC

A

3/10

STP3N100/FI

Thermal Impedeance For TO-220

Derating Curve For TO-220

Thermal Impedance For ISOWATT220

Derating Curve For ISOWATT220

Output Characteristics

4/10

Transfer Characteristics

Transconductance Static Drain-source OnResistance

Gate Charge vs Gate-source Voltage Capacitance Variations

STP3N100/FI

Temperature

Normalized On Resistancevs TemperatureNormalized Gate Threshold Voltage vs

5/10

STP3N100/FI

Turn-on Current Slope Turn-off Drain-source Voltage Slope

Cross-over Time Switching Safe Operating Area

Accidental Overload Area Source-drain Diode Forward Characteristics

6/10

STP3N100/FI

Fig. 1: Unclamped Inductive Load Test Circuits

Fig. 3: Switching Times Test Circuits For

Resistive Load

Fig. 2: Unclamped Inductive Waveforms

Fig. 4: Gate Charge Test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Reverse Recovery Time

7/10

STP3N100/FI

TO-220 MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

E

A

L4

D

F2

F1

G1

H2

G

F

C

D1

L2

Dia.

L5

L7

L6

L9

P011C

8/10

ISOWATT220 MECHANICAL DATA

STP3N100/FI

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.4 0.7 0.015 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

E

A

D

B

L3

L6

L7

Ø

F1

F

G1

H

G

F2

123

L2

L4

P011G

9/10

STP3N100/FI

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such informationnor for any infringement of patents or other rights of third partieswhich may results from its use. No
licenseis grantedby implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to changewithout notice. Thispublicationsupersedes andreplacesall information previously supplied.
SGS-THOMSONMicroelectronicsproducts are not authorized for use as criticalcomponents in lifesupport devices or systems without express
writtenapproval of SGS-THOMSONMicroelectonics.

 1996 SGS-THOMSONMicroelectronics - Printedin Italy- All Rights Reserved

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