Datasheet STP38N06 Datasheet (SGS Thomson Microelectronics)

STP38N06

N - CHANNEL ENHANCEMENT MODE

”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR

PRELIMINARY DATA

TYPE V

DSS

STP38N06 60 V < 0.03 Ω 38 A (*)

R

DS(on)

I

D

■ TYPICALR

■ AVALANCHERUGGEDTECHNOLOGY

■ 100% AVALANCHETESTED

■ REPETITIVEAVALANCHEDATAAT 100

■ HIGH CURRENTCAPABILITY

o

■ 175

■ HIGH dV/dt RUGGEDNESS

■ APPLICATIONORIENTED

COPERATINGTEMPERATURE

DS(on)

=0.026 Ω

o

C

CHARACTERIZATION

APPLICATIONS

■ HIGH CURRENT, HIGH SPEEDSWITCHING

■ POWERMOTOR CONTROL

■ DC-DC& DC-AC CONVERTERS

■ SYNCRONOUSRECTIFICATION

3

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb o l Parame t er Val u e Uni t

V

V

DGR

V

I

DM

P

dV/dt(

T

(•) Pulse width limited by safe operating area

March 1996

Drain-source Voltage (VGS=0) 60 V

DS

Drain- gate Voltage (RGS=20kΩ)60V
Gate-source Voltage ± 20 V

GS

I

Drain Current (c ont inuo us) a t Tc=25oC38A

D

I

Drain Current (c ont inuo us) a t Tc=100oC26A

D

(•) Drain Current (puls ed) 152 A

Total Dissipat i on at Tc=25oC90W

tot

Derat ing Factor 0.6 W/

1) Peak Diode Recovery voltage slope 7 V/ns

Stora ge Temperature -65 to 175

stg

T

Max. Operat ing Junct i on Temperatu re 175

j

o
o

o

C

C
C

1/11

STP38N06

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sin k

T

AVALANCHE CHARACTERISTICS

Symb o l Para met er Max V alue Uni t

I

AR

E

E

I

AR

Ther mal Resistance Junct ion-case Max
Ther mal Resistance Junct ion-ambient Max
Ther mal Resistance Case-s i nk Typ
Maximum Lead Tempera t ure For Solder ing Purpo se

l

Avalanche Current , Repet it iv e or Not-Repe t it ive
(pulse width limi t ed by T

Single Pu lse Avalanc he E nerg y

AS

(starti ng T
Repetitive Avalanche Energy

AR

=25oC, ID=IAR,VDD=25V)

j

(pulse width limi t ed by T

max, δ <1%)

j

max, δ <1%)

j

Avalanche Current , Repet it iv e or Not-Repe t it ive

=100oC, p ulse wid t h limited by Tjmax, δ <1%)

(T

c

1.66

62.5

0.5

300

38 A

300 mJ

75 mJ

26 A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwise specified)

case

OFF

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID= 250 µAVGS=0 60 V

Break dow n Voltage

I

I

DSS

GSS

Zero Gate Voltage
Drain Current (V

GS

Gat e- bod y Leaka ge
Current (V

DS

=0)

=0)

=MaxRating

V

DS

V

=MaxRatingx0.8 Tc= 125oC

DS

V

= ± 20 V ± 100 nA

GS

250

1000µAµA

ON (∗)

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

GS(th )

R

DS(on)

I

D(on)

Gat e Thre shold Volt age VDS=VGSID=250µA234V
St at ic Drain-source On

Resistance

VGS= 10V ID=19A

= 10V ID=19A Tc=100oC

V

GS

On State Drain Current VDS>I

D(on)xRDS(on)max

0.026 0.03

0.06

38 A

VGS=10V

DYNAMIC

Symbol Parameter Test Condition s Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansc on ductance

C

C

C

Input Capac it an ce

iss

Out put Capac itance

oss

Reverse Transfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on)maxID

=19A 14 19 S

VDS=25V f=1MHz VGS= 0 2000

350

80

2800

450
120

Ω
Ω

pF
pF
pF

2/11

STP38N06

ELECTRICAL CHARACTERISTICS (continued)

SWITCHINGON

Symbol Parameter Test Condition s Min. Typ. Max. Unit

t

d(on)

t

r

Turn-on Time
Rise Time

VDD=30V ID=19A

=50 Ω VGS=10V

R

G

(see test cir cuit, figure 3)

(di/dt)

Tur n-on C urr ent Slope VDD=48V ID=38A

on

R

=50 Ω VGS=10V

G

(see test cir cuit, figure 5)

Q

Q

Q

Tot al Gat e Charge

g

Gate-Source Charge

gs

Gat e- Drain Charge

gd

VDD=40V ID=38A VGS=10V 60

SWITCHINGOFF

Symbol Parameter Test Condition s Min. Typ. Max. Unit

t

r(Voff)

t

Off -voltage Rise Time

t

Fall T ime

f

Cross-over Time

c

VDD=48V ID=38A

=50 Ω VGS=10V

R

G

(see test cir cuit, figure 5)

SOURCE DRAIN DIODE

45

28065380

240 A/ µs

80 nC
10
20

65

140
230

85

180
300

ns
ns

nC
nC

ns
ns
ns

Symbol Parameter Test Condition s Min. Typ. Max. Unit

I

I

SDM

SD

Source-drain Current

(•)

Source-drain Current

38

152

(pulsed)

(∗)ForwardOnVoltage ISD=38A VGS=0 1.5 V

V

SD

t

Q

Reverse Recovery

rr

Time
Reverse Recovery

rr

ISD= 38 A di/dt = 10 0 A/µs

=40V Tj= 150oC

V

DD

(see test cir cuit, figure 5)

85

0.3

Charge

I

RRM

Reverse Recovery

7

Current

(∗) Pulsed: Pulse duration =300 µs,duty cycle 1.5 %
(•) Pulse width limited by safe operating area
(

1)I

≤ 20 A, di/dt≤ 300 A/µs, VDD≤ V

SD

(BR)DSS,Tj≤TJMAX

Safe Operating Area ThermalImpedance

A
A

ns

µC

A

3/11

STP38N06

Derating Curve

TransferCharacteristics

OutputCharacteristics

Transconductance

StaticDrain-source On Resistance

4/11

Gate Charge vs Gate-source Voltage

STP38N06

CapacitanceVariations

Normalized OnResistance vs Temperature

Normalized GateThreshold Voltage vs
Temperature

Turn-onCurrent Slope

Turn-offDrain-source VoltageSlope

Cross-overTime

5/11

STP38N06

SwitchingSafe Operating Area

Source-drainDiode Forward Characteristics

AccidentalOverload Area

Fig. 1: UnclampedInductive Load Test Circuit

6/11

Fig. 2: UnclampedInductive Waveform

STP38N06

Fig. 3: SwitchingTimes Test Circuits For

ResistiveLoad

Fig. 5: Test CircuitFor Inductive Load Switching
And DIodeRecovery Times

Fig. 4: GateCharge test Circuit

7/11

STP38N06

PSPICEPARAMETERS

SUBCIRCUITCOMPONENTS

Symb o l Para met er Val ue Uni t

S1 (V 14_16<0) ( S ee Power Mosf et Model Subcir cuit ) O N

S2 (V 16_11<0) ( S ee Power Mosf et Model Subcir cuit ) O N
LD Drain Inductance 8 nH
LG Gat e Induct ance 10 nH

LS Sour ce Inductance 10 nH

RDRAI N Drain Resistanc e 1.9E

RGA T E Gat e Resist ance 1 Ω

CGD Gate Drain Capacitance 3.92 nF
CGS Gate Source Capacit anc e 1.9 nF

ALF A Dr if t Coef icient 1E

RGN Negative Bias Resis t a nc e 10 KΩ

DIODE DRAIN GATE (Depletion Capacitance)

Symb o l Para met er Val ue Uni t

CJO Z e r o Bias p- n Capacitance 2.6 nF

VJ p- n Potential 0.1 V

M p-n Grading Coefficient 0.6

-2

-3

Ω

-1

V

DIODE DRAIN SOURCE

Symb o l Para met er Val ue Uni t

CJO Z e r o Bias p- n Capacitance 7.8 nF

VJ p- n Potential 0.1 V

M p-n Grading Coefficient 0.6

TT Tr ans it Time 20 nsec

N MOSFET

Symb o l Para met er Val ue Uni t

L Channel Length 1 µ Meter

W Ch annel Widt h 1 µ Meter

LEVEL Model Index 3

TOX Oxide Thickness 1 Meter
VT O Ze ro Bias Threshold Vo lt age 3.25 V

U0 Surf ac e Mobility 600 cm

THE T A Mobilit y M odulat i on 0.005 V

Vmax Maximum Drift Velocity 0 Meter/sec

KP Trans Conduct ance Coeff ic i ent 28 Amp/ V

For Transient Simulation Applicate U.I.C. (Use Initial Condition) Option

2

/VS

-1

2

8/11

STP38N06

PSPICENETLIST OF THE SUBCIRCUIT

.S UB CKT ST P38N06 1 2 3
*VALUE OF THE PACKAGE IN DUCTANC ES
LS 1 11 10n
LG 2 12 10n
LD 3 13 7n

*RESISTANCE OF THEGATE
PO LYSILI CO N
RG 12 16 1

*EPY AND DRIFT RESISTANC ES
RD 13 14 1.9e-02
EDRI 14 15 POL Y (2 ) (13 14) (13 1 1) 0 0 0 0
1e-3

*CAPAC ITANCE GATE SO UR CE
CGS16111.90n

*OPTIO NAL FO R NEGATIVE GATE BIAS
*S251111116SWITCH
*CGN 51 16 3.92n
*RGN 51 16 10k

*MILLER CAPACIT A NCE
CGD 16 17 3.92n

PowerMosfet ModelSubcircuit

* DEPLETION CAPACITANCE
DGD 17 14 DGD
S1 17 14 16 14 SWI T CH
.MODEL DGDD +IS=
+CJO =2. 6n
+Vj=.1
+M=.6

.MOD EL SWITCH VSW ITCH
+RON=1m
+ROFF=1MEG
+VON=0.1

* OU TP UT CAPACITANC E AND BODY DRAI N DI ODE
DBD 11 14 DBD
.MODEL DBDD
+TT=20n
+CJO =7. 8n
+VJ=.1
+M=.6

* MODELOF THE MOSFET
MMAIN 1 5 16 11 11 MM AIN L=1u W =1u
.MOD EL MMAIN NMOS
+LEVEL= 3
+TOX=1
+VTO=3.25
+uo=600
+THETA=0.005
+VM AX=5e7
+KP= 28
.ENDS

9/11

STP38N06

TO-220 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107

D1 1.27 0.050

E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203

G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409

L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154

DIA. 3.75 3.85 0.147 0.151

mm inch

E

A

L4

D

F2

F1

G1

H2

G

F

C

D1

L2

Dia.

L5

L7

L6

L9

P011C

10/11

STP38N06

Information furnished is believedto be accurateand reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequencesof use ofsuch informationnor for any infringement of patents or otherrights of third parties which may resultsfrom its use. No
licenseis grantedby implicationor otherwise underany patentor patentrights ofSGS-THOMSONMicroelectronics. Specificationsmentioned
in this publicationare subject to change without notice.This publication supersedes and replaces all information previously supplied.
SGS-THOMSONMicroelectronics productsarenotauthorized for useas critical components in lifesupportdevices or systemswithoutexpress
writtenapproval of SGS-THOMSONMicroelectonics.

 1995 SGS-THOMSONMicroelectronics - All Rights Reserved

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