Datasheet stp165n10f4 Datasheet

N-channel 100 V, 4.4 mΩ, 120 A TO-220

1

2

3

TO-220

STripFET™ DeepGATE™ Power MOSFET

Features

Order code V

DSS

STP165N10F4 100 V < 5.5 mΩ 120 A

■ N-channel enhancement mode

■ 100% avalanche rated

■ Low gate charge

■ Very low on-resistance

Application

R

DS(on)

max I

STP165N10F4

D

Switching applications

Description

Figure 1. Internal schematic diagram

The STP165N10F4 is an N-channel
enhancement mode Power MOSFET built with

$

STripFET™ DeepGATE™ technology with a new
gate structure. The product is tailored to minimize
on-resistance.

'

3

Table 1. Device summary

Order code Marking Package Packaging

STP165N10F4 165N10F4 TO-220 Tube

!-V

November 2010 Doc ID 15781 Rev 2 1/12

www.st.com

12

Contents STP165N10F4

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

2/12 Doc ID 15781 Rev 2

STP165N10F4 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

I

DM

P

V

V

Drain-source voltage (VGS = 0) 100 V

DS

Gate- source voltage ± 20 V

GS

Drain current (continuous) at TC = 25 °C 120 A

I

D

I

Drain current (continuous) at TC = 100 °C 110 A

D

(1)

Drain current (pulsed) 480 A

Total dissipation at TC = 25 °C 315 W

TOT

Derating factor 2.1 W/°C

(2)

EAS

T

Single pulse avalanche energy 500 mJ

Storage temperature - 55 to 150

stg

Max. operating junction temperature 150

T

j

1. Pulse width limited by safe operating area

2. Starting Tj = 25 °C, ID= 58 A, VDD= 50 V

Table 3. Thermal data

Symbol Parameter Value Unit

R

thj-case

R

thj-a

T

Thermal resistance junction-case max 0.48 °C/W

Thermal resistance junction-ambient max 62.5 °C/W

Maximum lead temperature for soldering purpose 315 °C

l

°C

Doc ID 15781 Rev 2 3/12

Electrical characteristics STP165N10F4

2 Electrical characteristics

(T

Table 4. On/off states

=25°C unless otherwise specified)

CASE

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Table 5. Dynamic

Drain-source
Breakdown voltage

Zero gate voltage
Drain current (V

GS

Gate-body leakage
current (VDS = 0)

= 0)

ID = 250 µA, VGS = 0 100 V

V

= max rating 1 µA

DS

= max rating,TC=125 °C 100 µA

V

DS

VGS = ± 20 V 100 nA

Gate threshold voltage VDS = VGS, ID = 250 µA 2 4 V

Static drain-source on
resistance

= 10 V, ID = 60 A 4.4 5.5 mΩ

V

GS

Symbol Parameter Test conditions Min. Typ. Max. Unit

C

C

C

Q

Q

Q

Input capacitance

iss

V

Output capacitance - 939 - pF

oss

Reverse transfer

rss

capacitance

Total gate charge

g

Gate-source charge - 48 - nC

gs

Gate-drain charge 62 nC

gd

= 25 V, f = 1 MHz,

DS

= 0

V

GS

= 50 V, ID = 120 A,

V

DD

VGS = 10 V

(see Figure 14)

10750 pF

603 pF

192 nC

4/12 Doc ID 15781 Rev 2

STP165N10F4 Electrical characteristics

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

= 50 V, ID = 60 A

V

t

d(on)

t

d(off)

Table 7. Source drain diode

Turn-on delay time

t

Rise time

r

Turn-off-delay time

t

Fall time

f

Symbol Parameter Test conditions Min. Typ. Max. Unit

DD

RG=4.7 Ω VGS = 10 V

(see Figure 13)

VDD = 50 V, ID = 60 A,

=4.7 Ω, V

R

G

GS

= 10 V

(see Figure 13)

29.6

­62

154

-

106

ns

­ns

ns

­ns

Source-drain current - 120 A

Source-drain current

(1)

(pulsed)

(2)

Forward on voltage ISD = 120 A, VGS = 0 - 1.4 V

I

Reverse recovery time

rr

Reverse recovery charge

rr

Reverse recovery current

SD

V

DD

di/dt = 100 A/µs,

= 150 °C (see Figure 15)

T

j

I

SDM

V

SD

I

I

SD

t

Q

RRM

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

= 120 A,

= 80 V

-480A

86.8

-

313

7.2

ns

nC

A

Doc ID 15781 Rev 2 5/12

Electrical characteristics STP165N10F4

I

D

100

10

1

0.1

0.1

1

100

V

DS

(V)

10

(A)

Operation in this area is

Limited by max R

DS(on)

100µs

1ms

10ms

Tj=150°C
Tc=25°C
Single pulse

AM08651v1

10

-5

10

-4

10

-3

10

-2

10

-1

t

p

(s)

10

-2

10

-1

K

0.2

0.05

0.02

0.01

0.1

Zth=k Rthj-c

δ=tp/τ

tp

τ

Single pulse

δ=0.5

280tok

I

D

150

100

50

0

0

V

DS

(V)

3

(A)

1

2

4

200

250

5V

6V

7V

VGS=10V

300

350

4V

AM08652v1

I

D

0

0

4

V

GS

(V)

8

(A)

2

6

V

DS

=2V

150

100

50

200

250

300

AM08653v1

BV

DSS

-75

T

J

(°C)

(norm)

-25

75

25

125

0.90

0.95

1.00

1.05

1.10

ID=1mA

175

AM08654v1

R

DS(on)

4.8

4.7

4.6

4.5
0

40

I

D

(A)

(mΩ)

20

60

4.9

5.0

5.1

5.2

VGS=10V

100

80

120

5.3

AM08655v1

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance

Figure 4. Output characteristics Figure 5. Transfer characteristics

Figure 6. Normalized B

vs temperature Figure 7. Static drain-source on resistance

VDSS

6/12 Doc ID 15781 Rev 2

STP165N10F4 Electrical characteristics

V

GS

6

4

2

0

0

50

Q

g

(nC)

(V)

200

8

100

150

10

VDS=50V

I

D

=120A

12

AM08656v1

C

6100

4100

2100

100

0

40

V

DS

(V)

(pF)

20

8100

60

Ciss

Coss

Crss

80

100

12100

10100

14100

AM08657v1

V

GS(th)

0.8

0.6

0.4

0.2

-75

T

J

(°C)

(norm)

-25

1.0

75

25

125

175

1.2

I

D

=250µA

AM08658v1

R

DS(on)

1.7

1.2

0.7

0.2

-75

T

J

(°C)

(norm)

-25

75

25

125

I

D

=60A

175

2.2

V

GS

=10V

AM08659v1

V

SD

0

40

I

SD

(A)

(V)

20

100

60

80

0.5

0.6

0.7

0.8

0.9

1.0

TJ=-55°C

TJ=175°C

TJ=25°C

120

AM08660v1

Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations

Figure 10. Normalized gate threshold voltage

vs temperature

Figure 12. Source-drain diode forward

characteristics

Figure 11. Normalized on resistance vs

temperature

Doc ID 15781 Rev 2 7/12

Test circuits STP165N10F4

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF

3.3

μF

V

DD

AM01469v1

VDD

47kΩ

1kΩ

47kΩ

2.7kΩ

1kΩ

12V

V

i=20V=VGMAX

2200
μF

PW

IG=CONST

100Ω

100nF

D.U.T.

V

G

AM01470v1

A

D

D.U. T.

S

B

G

25

Ω

A

A

B

B

R

G

G

FAST
DIODE

D

S

L=100μH

μF

3.3

1000

μF

V

DD

AM01471v1

Vi

Pw

VD

ID

D.U. T.

L

2200

μF

3.3

μF

VDD

AM01472v1

V(BR)DSS

VDD

VDD

VD

IDM

ID

AM01473v1

VDS

ton

tdon

tdoff

toff

tf

tr

90%

10%

10%

0

0

90%

90%

10%

V

GS

3 Test circuits

Figure 13. Switching times test circuit for

resistive load

Figure 15. Test circuit for inductive load

switching and diode recovery times

Figure 14. Gate charge test circuit

Figure 16. Unclamped inductive load test

circuit

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

8/12 Doc ID 15781 Rev 2

STP165N10F4 Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK

®

packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.

Doc ID 15781 Rev 2 9/12

Package mechanical data STP165N10F4

TO-220 type A mechanical data

Dim

mm

Min Typ Max

A 4.40 4.60

b 0.61 0.88

b1 1.14 1.70

c0.48 0.70

D 15.25 15.75

D1 1.27

E10 10.40
e 2.40 2.70

e1 4.95 5.15

F1.23 1.32

H1 6.20 6.60

J1 2.40 2.72

L13 14

L1 3.50 3.93
L20 16.40
L3028.90

∅P 3.75 3.85

Q 2.65 2.95

0015988_Rev_S

10/12 Doc ID 15781 Rev 2

STP165N10F4 Revision history

5 Revision history

Table 8. Document revision history

Date Revision Changes

19-May-2009 1 First release

12-Nov-2010 2

– Removed package H²PAK.
– Document status promoted from preliminary data to datasheet.

Doc ID 15781 Rev 2 11/12

STP165N10F4

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12/12 Doc ID 15781 Rev 2