Datasheet STP12PF06, STF12PF06 Datasheet (ST)

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查询STF12PF06供应商

P-CHANNEL 60V - 0.18 Ω - 12A TO-220/TO-220FP

TYPE

STP12PF06
STF12PF06

■ TYPICAL R

■ EXCEPTIONAL dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ LOW GATE CHARGE

■ APPLICATION ORIENTED

V

DSS

60 V
60 V

(on) = 0.18 Ω

DS

CHARACTERIZATION

DESCRIPTION

This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high p acking density for low on­resistance, rugged ava lanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility

R

DS(on)

< 0.20 Ω
< 0.20 Ω

I

D

12 A
12 A

STP12PF06

STF12PF06

STripFET™ II POWER MOSFET

Figure 1:PackageTable 1: General Features

2

TO-220 TO-220FP

Figure 2: Internal Schematic Diagram

2

APPLICATIONS

■ MOTOR CONTROL

■ DC-DC & DC-AC CONVERTERS

Table 2: Order Codes

PART NUMBER MARKING PACKAGE PACKAGING

STP12PF06
STF12PF06

P12PF06
F12PF06

TO-220

TO-220FP

TUBE
TUBE

Table 3: ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

STP20PF06 STF20PF06

V

DS

V

DGR

V

GS

I

D

I

D

I

(•)

DM

P

tot

dv/dt

E

AS

T

stg

T

j

(•) Pulse width limited by safe operating area.

:For the P-CHANNEL MOSFET actual polarity of voltages

NOTE
and current has to be reversed.

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

60 V

60 V
Gate- source Voltage ± 20 V
Drain Current (conti nuo us ) at TC = 25°C
Drain Current (conti nuo us ) at TC = 100°C

12 8 A

8.4 5.6 A
Drain Current (pulse d) 48 32 A
Total Dissipation at TC = 25°C

60 225 W

Derating Factor 0.4 0.17 W/°C

(1)

Peak Diode Recove ry vo ltag e slo pe 6 V/ns

(2)

Single Pulse Avalanche Energy 200 mJ
Storage Temperature
Operating Junction Temperature

(1) I

≤12A, di/dt ≤200A/µs, VDD ≤ V

SD

(2) Starting Tj = 25 oC, ID = 12A, VDD= 25V

-55 to 175 °C

(BR)DSS

, Tj ≤ T

JMAX

Rev. 2.0

1/10March 2005

STP12PF06 STF12PF06

Table 4: THERMAL DATA

TO-220 TO-220FP

Rthj-case Thermal Resistance Junction-case Max 2.5 5.35 °C/W

Rthj-amb

T

l

Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose

Max 62.5

300

°C/W

°C

ELECTRICAL CHARACTERISTICS (T

= 25 °C UNLESS OTHERWISE SPECIFIED)

CASE

Table 5: OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

V

(BR)DSS

Drain-source

= 250 µA, VGS = 0

D

60 V

Breakdown Voltage

= Max Rating

I

DSS

I

GSS

Table 6: ON

Zero Gate Voltage
Drain Current (V

Gate-body Leakage
Current (V

(*)

DS

= 0)

GS

= 0)

V

DS

= Max Rating TC = 125°C

V

DS

= ± 20V

V

GS

1

10

±100 nA

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

V

= VGS ID = 250 µA

DS

V

= 10 V ID = 10 A

GS

23.44 V

0.18 0.20 Ω

Resistance

Table 7: DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(2)

g

fs

C

iss

C

oss

C

rss

Forward Transconductance
Input Capacitance

Output Capacitance
Reverse Transfer
Capacitance

V

15 V

V

DS =

DS

ID

= 25V f = 1 MHz VGS = 0

= 6 A

2.5 6 S
850

230

75

µA
µA

pF
pF
pF

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STP12PF06 STF12PF06

ELECTRICAL CHARACTERISTICS (continued)

Table 8: SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time
Rise Time

Total Ga te Char ge
Gate-Source Charg e
Gate-Drain Charge

Table 9: SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

t

f

Turn-off Delay Time
Fall Time

Table 10: SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

(1 )

Pulse width limited by safe operating area.

(2)

Pulsed: Pulse duration = 300 µs , duty cycle 1.5 %.

Source-drain Curre nt

(1)

Source-drain Curre nt (pu lse d)

(2)

Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

= 30 V ID = 6 A

DD

=4.7 Ω VGS = 10 V

R

G

(Resistive Load, Figu re 19)
V

= 48 V ID= 12 A VGS= 10 V

DD

V

= 30 V ID = 6 A

DD

=4.7Ω, V

R

G

GS

= 10 V

(Resistive Load, Figu re 19)

I

= 12 A VGS = 0

SD

I

= 12 A di/dt = 100A/µs

SD

= 30 V Tj = 150°C

V

DD

(see test circuit, Figure 21)

20
40

16

4
6

40
10

100
260

5.2

21 nC

10
40

2.5 V

ns
ns

nC
nC

ns
ns

A
A

ns

nC

A

Figure 3: Safe Operating Area for TO-220 Figure 4: Safe Operating Area for TO-220FP

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STP12PF06 STF12PF06

Figure 5: Therm al Im pe da nce Figure 6: Thermal Impe da nce for TO -22 0F P

Figure 7: Output Characteristics Figure 8: Transf er Ch ar ac ter ist ics

Figure 9: Transconductance Figure 10: Static Drain-source On Resistance

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STP12PF06 STF12PF06

Figure 11: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations

Figure 13: Normalized Gate Threshold Voltage vs

Temperature

Figure 15: Source-drain Diode Forward

Characteristics

Figure 14: Normalized on Resistan c e vs Te mpe r at ur e

Figure 16: Normalized Breakdown Voltage

Temperature

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STP12PF06 STF12PF06

Figure 17: Unclamped Inductive Load Test Circuit

Figure 19: Switching Times Test Circuits For Re-

sistive Load

Figure 18: Unclamped Inductive Waveform

Figure 20: Gate Charge test Circuit

Figure 21: Test Circuit For Inductive Load

Switching And Diode Recovery Times

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STP12PF06 STF12PF06

TO-220 MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034

F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409
L2 16.40 0.645
L3 28.90 1.137
L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.260
L9 3.50 3.93 0.137 0.154

DIA 3.75 3.85 0.147 0.151

MIN. TYP. MAX. MIN. TYP. TYP.

mm. inch.

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STP12PF06 STF12PF06

TO-220FP MECHANICAL DAT A

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

A

B

H

E

D

L3

L6

L7

¯

F1

F

G1

G

F2

123

L2

L4

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STP12PF06 STF12PF06

Table 11:Revision History

Date Revision Description of Changes

March 2005
March 2005

1.0 FIRST ISSUE

2.0 MINOR REVISION

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STP12PF06 STF12PF06

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