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stp120n4f6
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Datasheet stp120n4f6 Datasheet

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Page 1
Features
1
2
3
TO-220
Order code V
DSS
STP120N4F6 40 V 4.3 mΩ
1. Current limited by package
■ Standard threshold drive
■ 100% avalanche tested
■ Switching applications
■ Automotive
Description
STP120N4F6
N-channel 40 V, 3.8 mΩ , 80 A, TO-220
STripFET™ VI DeepGATE™ Power MOSFET
R
DS(on)
max.
I
80 A
D
(1)

Figure 1. Internal schematic diagram

This device is a 40 V N-channel STripFET™ VI Power MOSFET based on the ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R
in all packages.
DS(on)

Table 1. Device summary

Order code Marking Package Packaging
STP120N4F6 120N4F6 TO-220 Tube
$4!"OR
'
3
!-V
May 2011 Doc ID 018846 Rev 1 1/13
www.st.com
13
Page 2
Contents STP120N4F6
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/13 Doc ID 018846 Rev 1
Page 3
STP120N4F6 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit
V
V
I
D
I
D
I
DM
P
TOT
T
T
1. Current limited by package
2. Pulse width limited by safe operating area
Drain-source voltage (V
DS
Gate-source voltage ± 20 V
GS
(1)
Drain current (continuous) at TC = 25 °C
(1)
Drain current (continuous) at TC = 100 °C
(2)
Drain current (pulsed) 320 A
Total dissipation at TC = 25 °C
Storage temperature
stg
Operating junction temperature
j
GS
= 0)
40 V
80 A
80 A
110 W
-55 to 175 °C

Table 3. Thermal resistance

Symbol Parameter Value Unit
R
thj-case
R
thj-amb
Thermal resistance junction-case max 1.36 °C/W
Thermal resistance junction-amb max 62.5 °C/W

Table 4. Thermal resistance

Symbol Parameter Value Unit
(1)
I
AR
E
AS
1. Pulse width limited by Tj max
2. Starting Tj = 25 °C, ID = 40 A, VDD = 25 V
Avalanche current, repetitive or not-repetitive 40 A
(2)
Single pulse avalanche energy 394 mJ
Doc ID 018846 Rev 1 3/13
Page 4
Electrical characteristics STP120N4F6

2 Electrical characteristics

(T
= 25 °C unless otherwise specified)
CASE

Table 5. Static

Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source breakdown Volt age
Zero gate voltage drain current (VGS = 0)
Gate body leakage current
= 0)
(V
DS
Gate threshold voltage V
Static drain-source on resistance
= 250 µA, VGS= 0 40 V
I
D
= 20 V
V
DS
= 20 V,Tc = 125 °C
V
DS
V
= ± 20 V ±100 nA
GS
= VGS, ID = 250 µA 2 4 V
DS
= 10 V, ID = 40 A
V
GS
3.8 4.3 mΩ
1
10

Table 6. Dynamic

Symbol Parameter Test conditions Min Typ. Max. Unit
C
C
C
Q
Q
Q
R
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
g
Total gate charge Gate-source charge
gs
Gate-drain charge
gd
Intrinsic gate resistance f = 1 MHz open drain - 1.5 - Ω
G
= 25 V, f=1 MHz,
V
DS
= 0 V
V
GS
= 20 V, ID = 80 A
V
DD
= 10 V
V
GS
(see Figure 14)
3850
-
650 350
65
-
20 16
-
-
µA µA
pF pF pF
nC nC nC
4/13 Doc ID 018846 Rev 1
Page 5
STP120N4F6 Electrical characteristics

Table 7. Switching on/off (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
d(off)
Turn-on delay time
t
Rise time
r
Turn-off delay time
t
Fall time
f
V
= 20 V, ID = 40 A,
DD
= 4.7 Ω, V
R
G
(see Figure 15)
GS
= 10 V
20
­70
40
­20
-
-

Table 8. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
Source-drain current
(1)
I
SDM
V
SD
Q
I
RRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Source-drain current (pulsed)
(2)
Forward on voltage
t
rr
Reverse recovery time Reverse recovery charge
rr
Reverse recovery current
= 40 A, V
I
I
SD
SD
= 80 A,
GS
di/dt = 100 A/µs,
= 30 V
V
DD
(see Figure 17)
= 0
-
-1.1V
40
-
56
2.8
80
320AA
ns ns
ns ns
ns
nC
A
Doc ID 018846 Rev 1 5/13
Page 6
Electrical characteristics STP120N4F6
I
D
100
10
1
0.1
0.1
1
V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
100µs
1ms
10ms
Tj=175°C
Tc=25°C
Single pulse
AM08627v1
I
D
200
100
50
0
0
2
V
DS
(V)
4
(A)
1
3
5
250
300
5V
6V
4V
VGS=10V
7
6
8
150
350
AM08628v1
I
D
150
100
50
0
0
2
V
GS
(V)
4
(A)
1
3
5
200
300
V
DS=
2V
AM08629v1
BV
DSS
-75
T
J
(°C)
(norm)
-25
75
25
125
0.80
0.85
0.90
0.95
1.00
1.05
175
1.10
1.15
AM08630v1
R
DS(on)
3.5
3.0
2.5
2.0 I
D
(A)
(mΩ)
20
40
4.0
4.5
VGS=10V
60
80
AM08631v1

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Normalized B
6/13 Doc ID 018846 Rev 1
vs temperature Figure 7. Static drain-source on resistance
VDSS
Page 7
STP120N4F6 Electrical characteristics
V
GS
6
4
2
0
0
10
Q
g
(nC)
(V)
40
8
20
30
10
VDD=20V
I
D
=80A
50
60
70
AM08632v1
C
1000
100
10
0.1
10
V
DS
(V)
(pF)
1
Ciss
Coss
Crss
AM08633v1
V
GS(th)
0.8
0.6
0.4
0.2
-75
T
J
(°C)
(norm)
-25
1.0
75
25
125
1.2
175
AM08634v1
R
DS(on)
2.0
1.5
1.0
0.5
-75
T
J
(°C)
(norm)
-25
75
25
125
V
GS
=10V
I
D
=40A
0
175
AM08635v1
V
SD
20
I
SD
(A)
(V)
10
50
30
40
0.4
0.5
0.6
0.7
0.8
0.9
1.0
TJ=-55°C
TJ=175°C
TJ=25°C
60
70
80
AM08636v1
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 12. Source-drain diode forward
characteristics
Figure 11. Normalized on resistance vs
temperature
Doc ID 018846 Rev 1 7/13
Page 8
Test circuits STP120N4F6
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF
3.3 μF
V
DD
AM01469v1
VDD
47kΩ
1kΩ
47kΩ
2.7kΩ
1kΩ
12V
V
i=20V=VGMAX
2200 μF
PW
IG=CONST
100Ω
100nF
D.U.T.
V
G
AM01470v1
A
D
D.U. T.
S
B
G
25
Ω
A
A
B
B
R
G
G
FAST DIODE
D
S
L=100μH
μF
3.3
1000
μF
V
DD
AM01471v1
Vi
Pw
VD
ID
D.U. T.
L
2200
μF
3.3 μF
VDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon
tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
V
GS

3 Test circuits

Figure 13. Switching times test circuit for
resistive load
Figure 15. Test circuit for inductive load
switching and diode recovery times

Figure 14. Gate charge test circuit

Figure 16. Unclamped Inductive load test
circuit

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

8/13 Doc ID 018846 Rev 1
Page 9
STP120N4F6 Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK specifications, grade definitions and products status are available at: www.st.com ECOPACK is an ST trademark.
®
packages, depending on their level of environmental compliance. ECOPACK
.
Doc ID 018846 Rev 1 9/13
Page 10
Package mechanical data STP120N4F6

Table 9. TO-220 type A mechanical data

mm
Dim.
Min. Typ. Max.
A 4.40 4.60
b 0.61 0.88
b1 1.14 1.70
c 0.48 0.70
D 15.25 15.75
D1 1.27
E10 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L13 14
L1 3.50 3.93
L20 16.40
L30 28.90
∅P 3.75 3.85
Q 2.65 2.95
10/13 Doc ID 018846 Rev 1
Page 11
STP120N4F6 Package mechanical data
0015988_typeA_Rev_S

Figure 19. TO-220 type A drawing

Doc ID 018846 Rev 1 11/13
Page 12
Revision history STP120N4F6

5 Revision history

Table 10. Document revision history

Date Revision Changes
17-May-2011 1 First release
12/13 Doc ID 018846 Rev 1
Page 13
STP120N4F6
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Doc ID 018846 Rev 1 13/13
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