Datasheet stn888 Datasheet

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2
3
HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAG E

Features

■ VERY LOW COLLECTOR TO EMITTER
SATURATION VOLTAGE
■ D.C. CURRENT GAING, h
■ SOT-223 PLAST IC PACKAGE FOR
SURFACE MOUNTING CIRCUITS
■ AVAILABLE IN TAPE & REEL PACKING
■ IN COMPLIANCE WITH THE 2002/93/E C
EUROPEAN DIRECTIVE

Applications

■ POWER MANAGEMENT IN PORTABLE
EQUIPMENT
■ VOLTAGE REGULATION IN BIAS SUPPLY
CIRCUITS
■ SWITCHING REGULATOR IN BATTERY
CHARGER APPLICATIONS
■ HEAVY LOAD DRIVER
> 100
FE
STN888
PNP TRANSISTOR
2
SOT-223

Internal Schematic Diagram

Description

The device is manufactured in low voltage PNP Planar Technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

Order Codes

Part Number Marking Package Packing
STN888 N888 SOT-223 Tape & Reel
rev.2
August 2005 1/9
www.st.com
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Page 2

1 Absolute Maximum Ratings STN888

1 Absolute Maximum Ratings

Table 1. Absolute Maximum Rating

Symbol Parameter Value Unit
V V V
P
CBO CEO EBO
I
I
CM
TOT
T
stg
T
Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current -5 A
C
Collector Peak Current (tP < 5ms) Total dissipation at Tc = 25°C
-45 V
-30 V
-6 V
-10 A
1.6 W Storage Temperature -65 to 150 °C Max. Operating Junction Temperature 150 °C
J

Table 2. Thermal Data

Symbol Parameter Value Unit
R
thj-amb
Thermal Resista nce Junction-Ambient__________________Max 78 °C/W
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Page 3
STN888 2 Electrical Char acteristics

2 Electrical Characteristics

(T
Table 3.
= 25°C; unless otherwise specified)
CASE
Electrical Characteristics
Symbol Parameter T est Conditions Min. T yp. Max. Unit
= -30V
I
CBO
I
EBO
V
(BR)CEO
Note: 1
V
(BR)CBO
V
(BR)EBO
V
CE(sat)
Note: 1
V
BE(sat)
Note: 1
h
FE
Note: 1
Collector Cut-off Current
= 0)
(I
E
Emitter Cut-off Current
= 0)
(I
C
Collector-Emitter Breakdown Voltage (I
= 0)
B
Collector-Base Breakdown Voltage (I
= 0)
E
Emitter-Base Breakdown Voltage (I
= 0)
C
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
V
CB
V
= -30V ____TC = 100°C
CB
= -6V
V
EB
= -10mA
I
C
= -100μA
I
C
= -100μA
I
E
= -500mA_____ IB = -5mA
I
C
I
= -2A_____ IB = -50mA
C
I
= -5A_____ IB = -250mA
C
= -6A_ ____ IB = -250mA
I
C
I
= -8A _____ IB = -400mA
C
= -10A ___ __ IB = -500mA
I
C
= -2A ____ IB = -50mA
I
C
I
= -6A ____ IB = -250mA
C
= -10mA V
I
C
I
= -500mA V
C
I
= -5 A V
C
I
= -5 A V
C
I
= -8 A V
C
I
= -10 A V
C
= -1 V tj = 100°C 100
CE
CE CE CE
CE CE
-30 V
-45 V
-6 V
-0.7
-1.0
-1.2
-1.2
= -1 V 120 200 = -1 V 100 200 300 = -1 V 70 100
= -1 V 55 = -1 V 35
-10
-100
-10 μA
-0.15
-0.35
-0.70
-1.1 V
μA μA
V V V V V V
V
INDUCTIVE LOAD
t
d
t
r
t
s
t
f
Delay Time Rise Time Storage Time Fall Time
= -3A ____ _ V
I
C
I
= -IB2 =-60mA
B1
(see Figure 7)
Note: 1 Pulsed duration = 300 μs, duty cycle ≤1.5%.
CC
= -20V
180 160 250
80
220 210 300 100
ns ns ns ns
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Page 4
2 Electrical Characteristics STN888
2.1 Typical Characteristics
Figure 1. DC Current Gain Figure 2. DC Current Gain
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage
Figure 5. Switching Times Resistive Load Figure 6. Switching Times Resistive Load
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Page 5
STN888 3 Test Circuits

3 Test Circuits

Figure 7. Resistive Load Switching Test Circuit

1) Fast Electronic Switching
2) Non-inductive Resisitor
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Page 6

4 Package Mechani cal Data STN888

4 Package M echanical Da ta
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Page 7
STN888 4 Package Mechanical Data
P008B
SOT-223 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.80 0.071
B 0.60 0.70 0.80 0.024 0.027 0.031
B1 2.90 3.00 3.10 0.114 0.118 0.122
c 0.24 0.26 0.32 0.009 0.010 0.013
D 6.30 6.50 6.70 0.248 0.256 0.264
e 2.30 0.090
e1 4.60 0.181
E 3.30 3.50 3.70 0.130 0.138 0.146
H 6.70 7.00 7.30 0.264 0.276 0.287
V10
A1 0.02
mm inch
o
o
10
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Page 8
5 Revision Hist ory STN888

5 Revision History

Date Revision Changes
03-Aug-2005 1 Initial release.
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STN888 5 Revision History
I
s
o
d
b
ct
t
ot
a
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f use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is grante y implic ation or otherwise under any patent or patent ri ghts of STM i croelectr onics. Specifications menti oned in thi s publicati on are subje
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