Datasheet stn4nf20l Datasheet

N-channel 200 V, 1.1 Ω, 1 A SOT-223

SOT-223

1

2

3

low gate charge STripFET™ II Power MOSFET

Features

R

Order code V

STN4NF20L 200 V < 1.5 Ω 1 A

■ 100% avalanche tested

■ Low gate charge

■ Exceptional dv/dt capability

DSS

Application

Switching applications

Description

This N-channel 200 V realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters.

DS(on)

max.

I

D

STN4NF20L

Figure 1. Internal schematic diagram

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Table 1. Device summary

Order code Marking Package Packaging

STN4NF20L 4NF20L SOT-223 Tape and reel

October 2010 Doc ID 17445 Rev 2 1/12

www.st.com

12

Contents STN4NF20L

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

2/12 Doc ID 17445 Rev 2

STN4NF20L Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

V

I

DM

P

TOT

dv/dt

T

1. Pulse width limited by safe operating area.

2. This value is rated according to Rthj-amb ≤ 10 sec.

3. Isd ≤ 1 A, di/dt ≤ 200 A/µs, VDD ≤ 80% V

Gate-source voltage ± 20 V

GS

Drain current continuous TC = 25 °C 1 A

I

D

Drain current continuous TC = 100 °C 0.63 A

I

D

(1)

Drain current pulsed 4 A

(2)

Total dissipation at TC = 25 °C 3.3 W

(3)

Peak diode recovery voltage slope 20 V/ns

T

Operating junction temperature

j

Storage temperature

stg

(BR)DSS.

- 55 to 150 °C

Table 3. Thermal data

Symbol Parameter Value Unit

thj-amb

(1)

Thermal resistance junction to ambient

(2)

38 °C/W

62.5 °C/W

R

1. When mounted on 1 inch² FR-4 board, 2 oz. Cu, (t < 10 sec).

2. When mounted on 1 inch² FR-4 board, 2 oz. Cu, (t > 10 sec).

Table 4. Thermal data

Symbol Parameter Value Unit

I

E

1. Pulse width limited by T

2. Starting Tj = 25 °C, ID = IAR, VDD = 50 V.

Avalanche current, repetetive or not repetetive

AR

Single pulse avalanche energy

AS

JMAX.

Doc ID 17445 Rev 2 3/12

(2)

(1)

1A

90 mJ

Electrical characteristics STN4NF20L

2 Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 5. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source breakdown voltage

Zero gate voltage drain current (V

GS

Gate-body leakage current (V

DS

= 0)

= 1 mA, VGS = 0 200 V

I

D

V

= Max rating

DS

= Max rating, TC=125 °C

V

DS

1

50µAµA

VGS = ± 20 V, VDS=0 ± 100 nA

Gate threshold voltage VGS = VDS, ID = 250 µA 1 2 3 V

Static drain-source on resistance

= 10 V, ID = 0.5 A

V

GS

= 5 V, ID = 0.5 A

V

GS

1.1

1.13

1.5

1.55ΩΩ

Table 6. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

C

R

Q

Input capacitance

iss

Output capacitance

oss

Reverse transfer

rss

capacitance

Instrinsic gate

g

resistance

Total gate charge

g

Gate-source charge

gs

Gate-drain charge

gd

= 25 V, f = 1 MHz,

V

DS

= 0

V

GS

f=1 MHz open drain - 5.5 - Ω

VDD = 160 V, ID = 1 A, VGS = 10 V (see Figure 13)

150

-

30

-

4

0.9

-

2.6

-

6.9

pF pF pF

nC nC nC

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max Unit

t

d(v)

t

c(off)

4/12 Doc ID 17445 Rev 2

Voltage delay time

t

Voltage rise time

r

t

Current fall time

f

Crossing time

= 100 V, ID = 0.5 A,

V

DD

RG = 4.7 Ω, V

GS

(see Figure 12)

= 10 V

3.6

-

2

10.4

15.4

ns ns

ns

STN4NF20L Electrical characteristics

Table 8. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

SDM

V

SD

Q

I

RRM

Q

I

RRM

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Source-drain current

SD

Source-drain current

(1)

(pulsed)

(2)

Forward on voltage ISD = 1 A, VGS = 0 - 1.6 V

t

Reverse recovery time

rr

Reverse recovery charge

rr

Reverse recovery current

Reverse recovery time

t

rr

Reverse recovery charge

rr

Reverse recovery current

ISD = 1 A, di/dt = 100 A/µs VDD = 60 V (see Figure 14)

= 1 A, di/dt = 100 A/µs

I

SD

= 60 V, Tj = 150 °C

V

DD

(see Figure 14)

1

-

51

-

90

3.5

56

-

105

3.7

A

4

A

ns

nC

A

ns

nC

A

Doc ID 17445 Rev 2 5/12

Electrical characteristics STN4NF20L

I

D

1

0.1

1

100

V

DS

(V)

10

(A)

Operation in this area is

Limited by max R

DS(on)

10µs

100µs

1ms

10ms

0.01

Tj=150°C Tc=25°C

Single pulse

AM08185v1

I

D

3

2

1

0

10

V

DS

(V)

20

(A)

4

5

4V

5V

3V

V

GS

=10V

6

AM08186v1

I

D

3

2

1

0

4

V

GS

(V)

8

(A)

2

6

4

5

1

3

57 9

V

DS

=15V

AM08187v1

BV

DSS

-50

0

T

J

(°C)

(norm)

-25

75

25

50

100

0.93

0.95

0.99

1.01

1.03

1.05

0.97

1.07

1.09

1.11

AM08188v1

R

DS(on)

1.06

1.04

1.02

1

0

0.4

I

D

(A)

(Ohm)

0.2

0.6

1.08

ID=0.5A

V

GS

=10V

0.8

1

VGS=5V

AM08189v1

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance

Figure 4. Output characteristics Figure 5. Transfer characteristics

Figure 6. Normalized B

vs temperature Figure 7. Static drain-source on resistance

VDSS

6/12 Doc ID 17445 Rev 2

STN4NF20L Electrical characteristics

V

GS

6

4

2

0

1

Q

g

(nC)

(V)

4

8

2

3

10

VDD=160V

I

D

=1A

5

12

300

200

100

0

400

500

V

DS

V

GS

6

7

8

AM08190v1

C

300

200

100

0

30

50

V

DS

(V)

(pF)

40

60

Ciss

Coss

Crss

20

10

0

AM08191v1

V

GS(th)

1.00

0.90

0.80

0.70

-50

0

T

J

(°C)

(norm)

-25

1.10

75

25

50

100

AM08192v1

R

DS(on)

1.9

1.5

0.7

0.5

-50

0

T

J

(°C)

(norm)

-25

75

25

50

100

0.9

1.1

1.3

1.7

2.1

AM08193v1

Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations

Figure 10. Normalized gate threshold voltage

vs temperature

Figure 11. Normalized on resistance vs

temperature

Doc ID 17445 Rev 2 7/12

Test circuits STN4NF20L

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF

3.3 μF

V

DD

AM01469v1

VDD

47kΩ

1kΩ

47kΩ

2.7kΩ

1kΩ

12V

V

i=20V=VGMAX

2200 μF

PW

IG=CONST

100Ω

100nF

D.U.T.

V

G

AM01470v1

A

D

D.U. T.

S

B

G

25

Ω

A

B

R

G

FAST DIODE

D

S

L=100μH

μF

3.3

1000

μF

V

DD

AM01471v1

Vi

Pw

VD

ID

D.U. T.

L

2200

μF

3.3 μF

VDD

AM01472v1

V(BR)DSS

VDD

VD

IDM

ID

AM01473v1

VDS

ton

tdon

tdoff

toff

tf

tr

90%

10%

0

90%

10%

V

GS

3 Test circuits

Figure 12. Switching times test circuit for

resistive load

Figure 14. Test circuit for inductive load

switching and diode recovery times

Figure 13. Gate charge test circuit

Figure 15. Unclamped inductive load test

circuit

Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform

8/12 Doc ID 17445 Rev 2

STN4NF20L Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

®

packages, depending on their level of environmental compliance. ECOPACK®

Doc ID 17445 Rev 2 9/12

Package mechanical data STN4NF20L

DIM.

mm.

min. typ max.

A 1.80

A1 0.02 0.1

B 0.60 0.70 0.85

B1 2.90 3.00 3.15

c 0.24 0.26 0.35

D6.30 6.50 6.70

e2.30

e1 4.60

E 3.30 3.50 3.70

H 6.70 7.00 7.30

V 10

o

SOT-223 mechanical data

0046067_L

10/12 Doc ID 17445 Rev 2

STN4NF20L Revision history

5 Revision history

Table 9. Document revision history

Date Revision Changes

29-Apr-2010 1 First release.

11-Oct-2010 2 Document status promoted from preliminary data to datasheet.

Doc ID 17445 Rev 2 11/12

STN4NF20L

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12/12 Doc ID 17445 Rev 2