Datasheet stn4nf06l Datasheet

Features

Typ e V

STN4NF06L 60 V < 0.1 Ω 4 A

DSS

R

DS(on)

max I

STN4NF06L

N-channel 60 V - 0.07 Ω - 4 A - SOT-223

STripFET™ II Power MOSFET

D

2

■ Exceptional dv/dt capability

■ Avalanche rugged technology

■ 100% avalanche tested

■ Low threshold drive

Applications

■ Switching application

– Automotive

Description

This Power MOSFET is the latest development of
STMicroelectronics unique “single feature size”
strip-based process. The resulting transistor
shows extremely high packing density for low on­resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.

3

2

1

SOT-223

Figure 1. Internal schematic diagram

Table 1. Device summary

Part number Marking Package Packaging

STN4NF06L 4NF06L SOT-223 Tape and reel

April 2008 Rev 1 1/12

www.st.com

12

Contents STN4NF06L

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

2/12

STN4NF06L Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

I

DM

P

V

V

I

D

I

TOT

DS

GS

(1)

D

Drain-source voltage (VGS = 0) 60 V

Gate-source voltage ± 16 V

Drain current (continuous) at TC = 25 °C 4 A

Drain current (continuous) at TC=100 °C 2.9 A

(2)

Drain current (pulsed) 16 A

Total dissipation at TC = 25 °C 3.3 W

Derating factor 0.026 W/°C

(3)

dv/dt

E

AS

T

T

stg

1. Current limited by the package

2. Pulse width limited by safe operating area

3. I

SD

4. Starting Tj = 25 °C, ID = 4 A, VDD = 30 V

Peak diode recovery voltage slope 10 V/ns

(4)

Single pulse avalanche energy 200 mJ

Operating junction temperature

J

Storage temperature

≤ 3 A, di/dt ≤ 150 A/µs, VDD ≤ V

(BR)DSS

, TJ ≤ T

JMAX

-55 to 150 °C

Table 3. Thermal data

Symbol Parameter Value Unit

(1)

Rthj-pcb Thermal resistance junction-PCB

Rthj-pcb Thermal resistance junction-PCB

(3)

T

l

1. When Mounted on FR-4 board with 1 inch

2. When mounted on minimum recommended footprint

3. For 10 sec. 1.6 mm from case

Maximum lead temperature for soldering
purpose typ

2

pad, 2 oz. of Cu. and t <10 sec.

(2)

max

max

38 °C/W

100 °C/W

260 °C

3/12

Electrical characteristics STN4NF06L

2 Electrical characteristics

(T

=25°C unless otherwise specified)

CASE

Table 4. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source breakdown
voltage

Zero gate voltage drain
current (VGS = 0)

Gate body leakage current

= 0)

(V

DS

Gate threshold voltage

Static drain-source on
resistance

= 250 µA, VGS= 0

I

D

V

= Max rating,

DS

V

= Max rating @125 °C

DS

= ±16 V

V

GS

= VGS, ID = 250 µA

V

DS

= 10 V, ID= 1.5 A

V

GS

= 5 V, ID= 1.5 A

V

GS

60 V

1

10

± 100 nA

12.8V

0.07

0.085

0.10

0.12

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

(1)

g

fs

C

C

C

Forward transconductance

Input capacitance

iss

Output capacitance

oss

Reverse transfer

rss

capacitance

= 15 V, ID=1.5 A

V

DS

= 25 V, f=1 MHz, VGS= 0

V

DS

3S

340

63
30

µA
µA

Ω

Ω

pF
pF
pF

Q
Q
Q

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

Total gate charge

g

Gate-source charge

gs

Gate-drain charge

gd

VDD = 48 V, ID = 3 A
V

(see Figure 15)

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

t

d(on)

t

d(off)

Turn-on delay time

t

rise time

r

Turn-off delay time

t

fall time

f

4/12

V
R

(see Figure 14)

V
RG= 4.7 Ω, VGS= 5 V

(see Figure 14)

= 5 V

GS

= 30 V, ID= 1.5 A,

DD

= 4.7 Ω, VGS= 5 V

G

= 30 V, ID= 1.5 A,

DD

7

1.5

2.8

9

25

20
10

9nC

nC
nC

ns
ns

ns
ns

STN4NF06L Electrical characteristics

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration= 300 µs, duty cycle 1.5%

Source-drain current 4 A

(1)

Source-drain current (pulsed) 16 A

(2)

Forward on voltage

rr

Reverse recovery time
Reverse recovery charge

rr

Reverse recovery current

I

= 4 A, VGS=0

SD

= 4 A,

I

SD

di/dt = 100 A/µs,

= 25 V, Tj= 150 °C

V

DD

(see Figure 16)

50
88

3.5

1.5 V

ns

nC

A

5/12

Electrical characteristics STN4NF06L

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance

Figure 4. Output characteristics Figure 5. Transfer characteristics

Figure 6. Transconductance Figure 7. Static drain-source on resistance

6/12

STN4NF06L Electrical characteristics

Figure 8. Gate charge vs. gate-source voltage Figure 9. Capacitance variations

Figure 10. Normalized gate threshold voltage

vs. temperature

Figure 12. Source-drain diode forward

characteristics

Figure 11. Normalized on resistance vs.

temperature

Figure 13. Normalized breakdown voltage vs.

temperature

7/12

Test circuit STN4NF06L

3 Test circuit

Figure 14. Switching times test circuit for

resistive load

Figure 16. Test circuit for inductive load

switching and diode recovery times

Figure 15. Gate charge test circuit

Figure 17. Unclamped Inductive load test

circuit

Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform

8/12

STN4NF06L Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com

9/12

Package mechanical data STN4NF06L

SOT-223 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

a 2.27 2.3 2.33 89.4 90.6 91.7

b 4.57 4.6 4.63 179.9 181.1 182.3

c 0.2 0.4 0.6 7.9 15.7 23.6

d0.63 0.65 0.67 24.8 25.6 26.4

e1 1.5 1.6 1.7 59.1 63 66.9

e4 0.3212.6

f2.933.1 114.2 118.1 122.1

g 0.67 0.7 0.73 26.4 27.6 28.7

l16.777.3 263.8 275.6 287.4

l2 3.5 3.5 3.7 137.8 137.8 145.7

L6.3 6.5 6.7 248 255.9 263.8

mm mils

L

l2

e1

a

b

f

C

l1

B

C

E

g

d

c

e4

P008B

10/12

STN4NF06L Revision history

5 Revision history

Table 8. Document revision history

Date Revision Changes

22-Apr-2008 1 Initial version

11/12

STN4NF06L

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