Datasheet stn3n40k3 Datasheet

N-channel 400 V, 3 Ω, 1.8 A SOT-223

SOT-223

1

2

3

Features

Order code V

STN3N40K3 400 V < 3.4 Ω 1.8 A 3.3 W

■ 100% avalanche tested

■ Extremely high dv/dt capability

■ Gate charge minimized

■ Very low intrinsic capacitance

■ Improved diode reverse rcovery characteristics

■ Zener-protected

DSSRDS(on)

Application

max I

P

D

W

STN3N40K3

SuperMESH3™ Power MOSFET

■ Switching applications

Description

The device is made using the SuperMESH3TM Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH3 optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications.

Table 1. Device summary

TM

technology combined with a new

Order code Marking Package Packaging

STN3N40K3 3N40K3 SOT-223 Tape and reel

Figure 1. Internal schematic diagram

D(2)

G(1)

S(3)

AM01476v1

April 2011 Doc ID 17697 Rev 2 1/13

www.st.com

13

Contents STN3N40K3

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

2/13 Doc ID 17697 Rev 2

STN3N40K3 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

V

I

DM

I

AR

E

AS

P

dv/dt

V

esd-(g-s)

T

1. Drain current limited by maximum temperature allowed.

2. Pulse width limited by safe operating area.

3. Pulse width limited by T

4. Starting Tj = 25 °C, ID = IAR, VDD = 50 V.

5. Isd ≤ 1.8 A, di/dt ≤ 400 A/µs, VDD ≤ 80% V

Drain source voltage 400 V

DS

Gate-source voltage ± 30 V

GS

Drain current continuous TC = 25 °C 1.8

I

D

I

Drain current continuous TC = 100 °C 1

D

(2)

Drain current pulsed 7.2 A

(3)

Avalanche current, repetetive or not repetetive 0.6 A

(4)

Single pulse avalanche energy 45 mJ

Total dissipation at TC = 25 °C 3.3 W

TOT

(5)

Peak diode recovery voltage slope 12 V/ns

(1)

G-S ESD (HBM C 0 100 pF; R = 1.5 kΩ) 1000 V

Operating junction temperature

T

j

Storage temperature

stg

Jmax.

(BR)DSS.

-55 to 150 °C

Table 3. Thermal data

Symbol Parameter Value Unit

A

R

thj-case

R

Thermal resistance junction-case max. 37.88 °C/W

Thermal resistance junction-amb max. 60 °C/W

thj-a

Maximum lead temperature for soldering

T

l

purpose

260 °C

Doc ID 17697 Rev 2 3/13

Electrical characteristics STN3N40K3

2 Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source breakdown voltage

Zero gate voltage drain current (V

GS

Gate-body leakage current (V

DS

= 0)

= 1 mA, VGS = 0 400 V

I

D

V

= Max rating

DS

= Max rating, TC=125 °C

V

DS

1

50µAµA

VGS = ± 20 V, VDS=0 ±10 µA

Gate threshold voltage VGS = VDS, ID = 50 µA 3 3.75 4.5 V

Static drain-source on resistance

V

= 10 V, ID = 0.6 A 3 3.4 Ω

GS

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

C

oss(er)

C

oss(tr)

C C C

Input capacitance

iss

Output capacitance

oss

Reverse transfer

rss

capacitance

Equivalent output

(1)

capacitance energy

= 50 V, f = 1 MHz,

V

DS

VGS = 0

V

Equivalent output

(2)

capacitance time

DS

-

17

-

3

-9-pF

-14-pF

pF pF pF

R

Q Q Q

1. Is defined as a constant equivalent capacitance giving the same charging time as C increases from 0 to 80% V

2. Is defined as a constant equivalent capacitance giving the same storage energy as C increases from 0 to 80% V

Instrinsic gate

g

resistance

Total gate charge

g

Gate-source charge

gs

Gate-drain charge

gd

DSS

f=1 MHz open drain - 10 - Ω

= 320 V, ID = 1.8 A,

V

DD

= 10 V

V

GS

(see Figure 16)

4/13 Doc ID 17697 Rev 2

-

11

2 7

when VDS

oss

when VDS

oss

nC

-

nC nC

STN3N40K3 Electrical characteristics

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max Unit

t

d(on)

t

d(off)

Turn on delay time

t

Rise time

r

Turn off delay time

t

Fall time

f

= 200 V, ID = 0.6,

V

DD

= 4.7 Ω, V

R

G

(see Figure 15)

GS

= 10 V

18

14

7 8

-

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

SDM

V

SD

Q

I

RRM

Q

I

RRM

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Source-drain current

SD

Source-drain current

(1)

(pulsed)

(2)

Forward on voltage ISD = 0.6 A, VGS = 0 - 1.5 V

Reverse recovery time

t

rr

Reverse recovery charge

rr

Reverse recovery current

Reverse recovery time

t

rr

Reverse recovery charge

rr

Reverse recovery current

= 1.8 A, di/dt = 100 A/µs

I

SD

= 60 V

V

DD

(see Figure 17)

ISD = 1.8 A, di/dt = 100 A/µs

= 60 V, Tj = 150 °C

V

DD

(see Figure 17)

-

145

-

490

7

166

-

580

7

1.8

7.2

ns ns ns ns

A A

ns

nC

A

ns

nC

A

Doc ID 17697 Rev 2 5/13

Electrical characteristics STN3N40K3

I

D

1

0.1

0.01

0.001

0.1

1

100

V

DS

(V)

10

(A)

Operation in this area is

Limited by max R

DS(on)

10µs

100µs

1ms

10ms

Tj=150°C Tc=25°C Single pulse

AM08994v1

I

D

1.5

1.0

0.5

0

10

V

DS

(V)

20

(A)

5

15

25

2.0

2.5

5V

6V

7V

VGS=10V

3.0

3.5

AM09050v1

I

D

1.5

1.0

0.5

0

4

V

GS

(V)

8

(A)

2

6

2.0

2.5

V

DS

=15V

3.0

AM08995v1

V

GS

6

4

2

0

2

Q

g

(nC)

(V)

8

4

6

10

VDD=320V

I

D

=1.8A

10

12

300

200

100

0

350

V

DS

V

GS

150

250

50

AM08996v1

R

DS(on)

3.2

3.0

2.8

2.6

0.2

0.6

I

D

(A)

(Ω)

0.4

0.8

3.4

3.6

3.8

4.0

VGS=10V

4.2

1.0 1.2 1.4 1.6

AM08997v1

2.1 Electrical characteristics

Figure 2. Safe operating area Figure 3. Thermal impedance

Figure 4. Output characteristics Figure 5. Transfer characteristics

Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on resistance

6/13 Doc ID 17697 Rev 2

STN3N40K3 Electrical characteristics

C

100

10

1

0.1

10

V

DS

(V)

(pF)

1

100

Ciss

Coss

Crss

AM08998v1

E

oss

0.3

0.2

0.1

0

100

V

DS

(V)

(µJ)

400

0.4

200

300

0.5

0.6

0.7

0.8

AM08999v1

V

GS(th)

1.00

0.90

0.80

0.70

-75

T

J

(°C)

(norm)

-25

1.10

75

25

125

I

D

=50µA

AM09000v1

R

DS(on)

2.0

1.5

1.0

0.5

-75

T

J

(°C)

(norm)

-25

75

25

125

2.5

0

V

GS

=10V

I

D

=0.6A

AM09001v1

V

SD

0

0.8

I

SD

(A)

(V)

0.4

1.2

1.6

0.4

0.5

0.6

0.7

0.8

0.9

1.0

TJ=-50°C

TJ=150°C

TJ=25°C

AM09003v1

BV

DSS

-75

T

J

(°C)

(norm)

-25

75

25

125

0.90

0.95

1.00

1.05

1.10

I

D

=1mA

AM09002v1

Figure 8. Capacitance variations Figure 9. Output capacitance stored energy

Figure 10. Normalized gate threshold voltage

vs. temperature

Figure 12. Source-drain diode forward

characteristics

Figure 11. Normalized on resistance vs.

temperature

Figure 13. Normalized B

vs. temperature

VDSS

Doc ID 17697 Rev 2 7/13

Electrical characteristics STN3N40K3

E

AS

0

40

T

J

(°C)

(mJ)

20

100

60

80

0

5

10

15

20

120

140

25

30

35

40

45

50

ID=0.6 A

V

DD

=50 V

AM09004v1

Figure 14. Maximum avalanche energy vs.

starting Tj

8/13 Doc ID 17697 Rev 2

STN3N40K3 Test circuits

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF

3.3 μF

V

DD

AM01469v1

VDD

47kΩ

1kΩ

47kΩ

2.7kΩ

1kΩ

12V

V

i=20V=VGMAX

2200 μF

PW

IG=CONST

100Ω

100nF

D.U.T.

V

G

AM01470v1

A

D

D.U. T.

S

B

G

25

Ω

A

B

R

G

FAST DIODE

D

S

L=100μH

μF

3.3

1000

μF

V

DD

AM01471v1

Vi

Pw

VD

ID

D.U. T.

L

2200

μF

3.3 μF

VDD

AM01472v1

V(BR)DSS

VDD

VD

IDM

ID

AM01473v1

VDS

ton

tdon

tdoff

toff

tf

tr

90%

10%

0

90%

10%

V

GS

3 Test circuits

Figure 15. Switching times test circuit for

resistive load

Figure 17. Test circuit for inductive load

switching and diode recovery times

Figure 16. Gate charge test circuit

Figure 18. Unclamped inductive load test

circuit

Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform

Doc ID 17697 Rev 2 9/13

Package mechanical data STN3N40K3

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

®

packages, depending on their level of environmental compliance. ECOPACK®

10/13 Doc ID 17697 Rev 2

STN3N40K3 Package mechanical data

Table 8. SOT-223 mechanical data

mm

Dim.

Min. Typ. Max.

a 2.27 2.3 2.33

b 4.57 4.6 4.63

c0.20.40.6

d 0.63 0.65 0.67

e1 1.5 1.6 1.7

e4 0.32

f2.933.1

g 0.67 0.7 0.73

l1 6.7 7 7.3

l2 3.5 3.5 3.7

L6.36.56.7

Figure 21. SOT-223 mechanical data drawing

L

e1

a

b

f

C

l1

B

C

E

g

d

l2

c

e4

P008B

Doc ID 17697 Rev 2 11/13

Revision history STN3N40K3

5 Revision history

Table 9. Document revision history

Date Revision Changes

29-Jun-2010 1 First release.

08-Apr-2011 2 Document status promoted from preliminary data to datasheet.

12/13 Doc ID 17697 Rev 2

STN3N40K3

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Doc ID 17697 Rev 2 13/13