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N-channel 40V - 0.0042Ω - 80A - PowerFLAT™ (6x5)
STripFET™ Power MOSFET for DC-DC conversion
General features
Type V
STL80N4LLF3 40V <0.005Ω 20A
1. When mounted on FR-4 board of 1 inch² , 2oz Cu,
t<10 sec
■ Improved die-to-footprint ratio
■ Very low profile package (1mm Max)
■ Very low thermal resistance
■ Conduction losses reduced
■ Switching losses reduced
DSS
Description
R
DS(on)
STL80N4LLF3
I
D
(1)
PowerFLAT™( 6x5 )
This series of product utilizes the latest advanced
design rules of ST’s proprietary STripFET™
Technology. The resulting Transistor is optimized
for low on-Resistance and minimal gate charge.
The chip-scaled PowerFLAT™ package allows a
significant board space saving, still boosting the
performance.
Applications
■ Switching application
Order codes
Part number Marking Package Packaging
STL80N4LLF3 L80N4LLF3 PowerFLAT™ (6x5) Tape & reel
Internal schematic diagram
November 2006 Rev 7 1/12
www.st.com
12
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Contents STL80N4LLF3
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
Page 3
STL80N4LLF3 Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
V
GS
V
GS
I
D
I
D
I
D
I
DM
P
TOT
P
TOT
T
stg
T
1. Guaranteed for test time < 15ms
2. The value is rated according Rthj-c
3. When mounted on FR-4 board of 1 inch² , 2oz Cu, t < 10 sec
4. Pulse width limited by safe operating area
Drain-source voltage (VGS = 0) 40 V
Gate- source voltage ±16 V
(1)
Gate- source voltage ±18 V
(2)
Drain current (continuous) at TC = 25°C 80 A
(2)
Drain current (continuous) at TC = 100°C 50 A
(3)
Drain current (continuous) at TC = 25°C 20 A
(4)
Drain current (pulsed) 80 A
(2)
Total dissipation at TC = 25°C 80 W
(3)
Total dissipation at TC = 25°C 4 W
Derating factor
(3)
Storage temperature
Operating junction temperature
j
0.03 W/°C
-55 to 150 °C
Table 2. Thermal resistance
Symbol Parameter Value Unit
Rthj-c Thermal resistance junction-case max 1.56 °C/W
(1)
Rthj-pcb
1. When mounted on FR-4 board of 1 inch² , 2oz Cu, t<10 sec
Thermal operating junction-pcb max 31.2 °C/W
3/12
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Electrical characteristics STL80N4LLF3
2 Electrical characteristics
(T
= 25°C unless otherwise specified)
CASE
Table 3. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source
breakdown voltage
Zero gate voltage
drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
ID = 250 µA, VGS = 0 40 V
VDS = Max rating
VDS = Max rating@125 °C
10
100µAµA
VGS = ± 16V ±200 nA
Gate threshold voltage VDS = VGS, ID = 250 µA 1 V
Static drain-source on
resistance
= 10V, ID = 10 A
V
GS
= 4.5V, ID =10 A
V
GS
0.0042
0.005
0.005
0.007ΩΩ
Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
C
C
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
= 25V, f = 1 MHz,
V
DS
= 0
V
GS
f=1 MHz Gate DC Bias = 0
R
Gate input resistance
G
Test signal level = 20mV
open drain
Q
Q
Q
Total gate charge
g
Gate-source charge
gs
Gate-drain charge
gd
VDD = 32V, ID = 20 A,
= 4.5V
V
GS
(see Figure 13)
2530
574
29
13 5 Ω
21.5
28 nC
6.9
8.2
pF
pF
pF
nC
nC
4/12
Page 5
STL80N4LLF3 Electrical characteristics
Table 5. Switching times
Symbol Parameter Test conditions Min Typ Max Unit
t
d(on)
t
d(off)
t
t
Turn-on delay time
Rise time
r
Turn-off delay time
Fall time
r
= 20V, ID = 10A,
V
DD
= 4.7Ω VGS = 10V
R
G
(see Figure 15)
17
25
62
9
Table 6. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300µs, duty cycle 1.5%
Source-drain current
(1)
Source-drain current (pulsed)
(2)
Forward on voltage ISD = 20 A, VGS = 0 1.2 V
Reverse recovery time
rr
Reverse recovery charge
rr
Reverse recovery current
ISD = 20A,VDD = 20V
di/dt = 100A/µs
= 150°C(see Figure 14)
T
j
2080A
43
64
3
ns
ns
ns
ns
A
ns
nC
A
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Electrical characteristics STL80N4LLF3
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characterisics Figure 4. Transfer characteristics
Figure 5. Normalized B
vs temperature Figure 6. Static drain-source on resistance
VDSS
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STL80N4LLF3 Electrical characteristics
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage
vs temperature
Figure 11. Source-drain diode forward
characteristics
Figure 10. Normalized on resistance vs
temperature
7/12
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Test circuit STL80N4LLF3
3 Test circuit
Figure 12. Switching times test circuit for
resistive load
Figure 14. Test circuit for inductive load
switching and diode recovery times
Figure 13. Gate charge test circuit
Figure 15. Unclamped inductive load test
circuit
Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform
8/12
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STL80N4LLF3 Package mechanical data
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/12
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Package mechanical data STL80N4LLF3
PowerFLAT™ (6x5) MECHANICAL DATA
DIM.
A 0.80 0.83 0.93 0.031 0.032 0.036
A1 0.02 0.05 0.0007 0.0019
A3 0.20 0.007
b 0.35 0.40 0.47 0.013 0.015 0.018
D 5.00 0.196
D1 4.75 0.187
D2 4.15 4.20 4.25 0.163 0.165 0.167
E 6.00 0.236
E1 5.75 0.226
E2 3.43 3.48 3.53 0.135 0 .137 0.139
E4 2.58 2.63 2.68 0.103 0.105
e 1.2 7 0.050
L 0.70 0.80 0.90 0.027 0.031 0.035
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
10/12
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STL80N4LLF3 Revision history
5 Revision history
Table 7. Revision history
Date Revision Changes
13-May-2005 1 First release.
20-Jun-2005 2 Updated mechanical data
22-Jun-2005 3 New R
04-Jan-2006 4 New footprint
06-Jun-2006 5 Complete version
04-Sep-2006 6 New template, no content change
22-Nov-2006 7 Corrected part number
value on Ta bl e 6
G
11/12
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STL80N4LLF3
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