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Thick-film Hybrid IC
Ordering number : EN4290A
73096HA (OT)/O012YO No. 4290-1/11
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
DC 3-phase Brushless Motor Driver
(Output Current 3A)
STK6103
Specifications
Maximum Ratings at Ta = 25°C
Allowable Operating Ranges at Ta = 25°C
Overview
The STK6103 is a hybrid IC incorporating a 3-phase
brushless motor controller and driver into a single
package, on the Sanyo IMST (Insulated Metal Substrate
Technology) substrate. Revolution speed is controlled
through the DC voltage level (Vref1) external input and
PWM control of motor phase winding current. The
driver is MOSFET to minimize circuit loss and handle
high-output current (rush current) demands.
Applications
• PPC and LBP drum motors
• Air conditioner fan motors
Features
• The output driver transistor is MOSFET for low power
loss (half that of a bipolar transistor) and reliable
handling of high-output current (rush current).
• Variation in Vref1level causes the driver transistor to
switch to PWM drive for high-efficiency motor speed
variation.
• Normal and reverse revolution select function.
• Start/stop and brake functions.
• Current limiter function.
Package Dimensions
unit: mm
4130
[STK6103]
Parameter Symbol Conditions Ratings Unit
Maximum supply voltage 1 V
CC
1 max No input signal 50 V
Maximum supply voltage 2 V
CC
2 max No input signal 7 V
Maximum output current I
O
max
Position detect input signal cycle = 30 ms,
5A
PWM duty = 50%, operation time 1s
Operating substrate temperature TCmax 105 °C
Junction temperature T
j
max 150 °C
Storage temperature Tstg –40 to +125 °C
Parameter Symbol Conditions Ratings Unit
Supply voltage 1 V
CC
1 With input signal 16 to 42 V
Output current Io ave DC phases present 3 A
Supply voltage 2 V
CC
2 With input signal 4.75 to 6.0 V
Brake current I
OB
80 Hz full sine waves (all phases).
8A
Operating time 0.1 s duty = 5% (see Note 1).
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Electrical Characteristics at Tc=25°C, VCC1 = 24 V, VCC2 = 5.0 V
Equivalent Circuit
Parameter Symbol Conditions min typ max Unit
Supply current 1 (pin 13) I
CCO
1 CW revolution 12 20 mA
Supply current 2 (pin 13) I
CCO
2 Braking 26 38 mA
Output saturation voltage 1 Vst1 V
CC
1 side TR, Io = 3A 0.43 0.56 V
Output saturation voltage 2 Vst2 GND side TR, Io = 3A 0.47 0.62 V
Internal MOSFET diode
V
F
IF= 3A 0.95 1.5 V
forward voltage
PWM oscillation frequency f
C
20 25 30 kHz
Current limiter reference voltage Vref
2 0.47 0.50 0.53 V
Position detect input sensitivity V
H
20 500 mV
Position detect common mode range
CMRH 2.0 4.5 V
Input “L” current 1 (pins 2,3) I
IL1
V
IL1
= GND 130 200 µA
Input “L” voltage 1 (pins 2,3) V
IL1
1.0 V
Input “L” current 2 (pin 4) I
IL2
V
IL2
= GND 570 910 µA
Input “L” voltage 2 (pin 4) V
IL2
1.0 V
Vref1 “H” voltage Vref
1H
GND side transistor not in PWM 2.82 3.2 V
Vref1 “L” voltage Vref
1L
GND side transistor off 0.15 0.35 V
Zener voltage V
Z
5.7 6.2 6.7 V
FG output current I
FGH
VFG= 1.6 V 80 µA
FG output “L” voltage V
FGL
IFG= 0.3 mA 0.4 V
FG output pulse width τ
FG
CF= 0.1µF, RF= 10 kΩ 0.9 1.0 1.1 ms
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Pin Functions
Pin No. Symbol Function
1 Vref
1
GND-side driver transistor PWM control pin: range 0.15 to 3.2V
2 START/STOP “H” = START, “L” = STOP (all transistors off)
3 CW/CCW “H” = CW, “L” = CCW
4 BRAKE “H” = rotate, “L” = Only GND-side transistor on
5 FG OUT Position detect signal: output 6 pulses per cycle
6 TFG For setting FG OUT “L” level pulse width. R
F
and CFpins.
7 H
C–
Motor position detect signal input pin (to Hall device)
8 H
C+
Motor position detect signal input pin (to Hall device)
9 H
b–
Motor position detect signal input pin (to Hall device)
10 H
b+
Motor position detect signal input pin (to Hall device)
11 H
a–
Motor position detect signal input pin (to Hall device)
12 H
a+
Motor position detect signal input pin (to Hall device)
13 VCC2 Motor controller supply voltage pin
14 GND1 Motor controller IC GND pin: signal ground (SG)
15 GND2 External R
S
GND-side connection pin: power ground (PG)
16 Vref
2
Current limiter set pin: 0.1VCC2 when open
17 V
S
External RScurrent limiter detect pin
18, 19 V
RS
External RSconnect pin
20, 21 U Output pin (to motor winding)
22, 23 V Output pin (to motor winding)
24, 25 W Output pin (to motor winding)
26, 27 V
CC
1 Supply voltage pin (to motor)
28 VZ Zener voltage (6.2V typ) for V
CC
1 driver transistor date source supply
Input Type
Note 1: IOBindicates the operating current waveform peak as shown below.
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Sample Application Circuit
Description of Operation
The DC 3-phase brushless motor generally uses a permanent magnet for the rotor and places the stator coil around it.
When the rotor and stator coil are excited, magnetic force is generated between the poles, which is used for revolution
torque. For efficient revolution it is necessary to know precisely where the rotor pole is in relation to the stator pole. In
the brushless motor Hall devices and Hall ICs are widely used for this purpose, by detecting the electric power generated
along the lines of magnetic force.
(1) Motor rotating force
The block diagram for this HIC is given in Fig. 2.
The conditions before input of VCC1, with VCC2 on, are START/STOP pin H level, CW/CCW pin H level, BRAKE
pin H level and Vref1pin (speed control input) H level. The position detect signal at this time, due to the effect of
the rotor magnetic field, will be output signals from 1 or 2 devices (of the 3) so that HX+>HX–is input to HIC pins 7
to 12. The signals input to pins 7 to 12 are input to the motor controller and converted into signals compatible with
3-phase brushless motor revolution. When VCC1 is supplied the charge pump circuit activates, generating VCC1
MOSFET gate voltage VZ. This outputs excitation current to the motor phase windings as indicated in the timing
chart (Fig. 3), and rotating the motor.
For revolution speed control, the Vref1pin voltage is converted and used for PWM drive to increase GND transistor
efficiency, controlling the conduction of motor current Io (Fig. 1). Control of Io means control of power supplied
to the motor, which controls motor rpm. In general motor rpm N is proportional to the PWM on duty (when motor
load is constant). The PWM on duty is proportional to the size of Vref1(see Fig. 13), and the relation of N is as
outlined below.
Ν ∝ PWM ON Duty ∝ Vref
1
Fig.1 PWM Drive Principle
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Motor revolution is stopped by setting START/STOP to L level to turn off all drive transistors, and cut the supply of
current to the motor. Motor inertia will prevent instantaneous stopping. The brake function works to shorten the amount
of time needed to come to a complete stop. In input level L the VCC1 driver transistor is turned off, all GND driver
transistors are turned on, and the amount of power generated by the rotating motor windings reduced to reduce the rpms.
This brake function has priority over all START/STOP, CW/CCW and position detect input conditions.
Fig. 2 Block Diagram
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Fig. 3 I/O Timing Chart
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(2) Other functions
➀ CW/CCW
The direction of motor revolution can be selected by setting the input level to H or L. CW is H level and
CCW is L level. The CW timing chart is indicated in Fig. 3, and the CCW timing chart in Fig. 5.
➁ Current limiter function
The current limiter converts the GND driver transistor source current into VRSthrough the external RS, and
controls GND driver transistor conduction based on a comparison of this voltage to Vref2. Vref2generates a
0.1 VCC2 voltage in pin open state. Vref2is generated by the voltage division between 27 kΩ and 3 kΩ
resistances, and so the Vref2level can be readily reduced by attaching an external resistor. To prevent HIC
destruction in the event of motor lock, a current limiter can be enabled by setting Vref2at or below Io ave. If
no such protection is required, set Vref2between Io max and Io ave to limit rush current.
➂ FG OUT
This pin outputs a square wave pulse proportional to one motor revolution, which can be used as the motor
servo-control PLL IC FG input signal. The square wave L level time t1is set by the time constant of CFand
RFconnected to the TFG pin (Fig. 4).
Fig. 4
In general, when the n-pole 3-phase brushless motor fixed-speed rpm is expressed as N(rpm), the setting for t
1
so that t1= 0.5 t2is given by expression ①.
t1=
1000
x 0.5 [ms]···································· ①
N
x 6 x
n
60 2
The relation between CF, RFand t1is given by expression ②.
t1≈ a·RF·CF································································· ②
However, a = 1
(
s
)
, RF= 3 kΩ to 30 kΩ, t1>50 µs
Ω·F
Expression ① is designed to be half that of fixed speed t2, but when an FV conversion circuit is connected to
the FG OUT pin, it is necessary to reduce the duty to under 50%. In this case, adjust RFor CFas needed.
(3) Precautions in drive
➀ Start current (rush current)
The motor start Rs current waveform is shown in Fig. 6. Current peak IOHmust not exceed Io max.
➁ Position detect signal
Because signal input sensitivity VHis ±500 mV max, the level of the output signal (open collector) from the
Hall IC must be reduced through conversion. A sample of this circuit is shown in Fig. 7. The position detect
signal must be compatible with the motor phase winding even in the time chart state shown in Fig. 3, or the
motor may not revolve smoothly.
➂ Motor phase winding current during braking
The motor phase winding current during braking must not exceed Io max even during peak, although several
times set current levels are input.
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Fig. 5 CW/CCW I/O Timing Chart
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Fig.6 Starting Current
Fig.7 Conversion Circuit for Hall IC and Hall Device Signal
Fig.8
Thermal Radiation Design
(1) Internal average power dissipation Pd
The driver transistors represent the majority of the power dissipation in operation. Other losses are VCC2 and
the charge pump circuit. In PWM drive in particular, the diode in the VCC1 transistor is being used as a
flywheel diode, increasing VCC1 transistor loss. When these are included, internal mean power dissipation is:
Pd = Io (Vst1+ VFd2+ Vst2d1) + PdA+ PdB+ PdC······················· ➀
Io : Motor current
Vst1: VCC1 transistor saturation voltage
Vst2: GND transistor saturation voltage
d1: GND transistor PWM operation on duty
d2: GND transistor PWM operation off duty
PdA: VCC2 loss
PdB: Charge pump circuit loss
PdC: GND transistor switching loss
VF: VCC1 transistor internal diode normal direction voltage
Because the driver transistor is a MOSFET, Vst1and Vst2will increase with an increase in IOor substrate
temperature Tc.
PdAand PdBare generally given as:
PdA≈ VCC2 x I
CCO1
········································································ ➁
PdB≈ VCC1 x (0.49VCC1 – 4.2) x 0.001········································ ➂
where, VCC1 = 16 to 42V
Refer to Figs. 11 to 14 for data on Vst1, Vst2, d1and VF.
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(2) Thermal radiation design
Actual thermal radiation design requires determination of the IC internal average power dissipation Pd from the
motor phase current Io (Fig. 9). Pd is then used to determine the thermal resistance for the radiator from the
following expression.
θc – a =
Tc max – Ta
(°C/W)
Pd
where Tc max = 105°C
Ta = ambient temperature
With a 2.0 mm radiation plate, the required area can be determined from Fig. 10. Note that substrate temperature
will vary widely with set internal air temperature, and Tc for the mounted state must be 105°C max.
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This catalog provides information as of November, 1997. Specifications and information herein are subject to
change without notice.
■ No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace
equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of
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■ Anyone purchasing any products described or contained herein for an above-mentioned use shall:
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damages, cost and expenses associated with such use:
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SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees
jointly or severally.
■ Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for
volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied
regarding its use or any infringements of intellectual property rights or other rights of third parties.
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