Datasheet stk22n6f3 Datasheet

N-channel 60 V, 0.0055 Ω, 22 A, PolarPAK

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Features

Type V

DSS

STK22N6F3 60 V < 0.006 Ω

■ Ultra low top and bottom junction to case

thermal resistance

■ Extremely low on-resistance R

■

Very low switching gate charge

■ Fully encapsulated die

■ 100% matte tin finish (in compliance with the

2002/95/EC european directive)

■ High avalanche ruggedness

■ PolarPAK

®

is a trademark of VISHAY

Application

R

DS(on)

max

STK22N6F3

STripFET™ Power MOSFET

PolarPAK

Figure 1. Internal schematic diagram

®

■ Switching applications

Description

This STripFET™ III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performances.

Bottom View

Top View

Table 1. Device summary

Order code Marking Package Packaging

STK22N6F3 2263

PolarPAK

®

Tape and reel

April 2009 Doc ID 14850 Rev 2 1/15

www.st.com

15

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Contents STK22N6F3

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

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STK22N6F3 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

P

V

I

DM

TOT

DS

GS

D

I

D

Drain-source voltage (VGS = 0) 60 V

Gate-source voltage ± 20 V

(1)

Drain current (continuous) at TC = 25°C 22 A

Drain current (continuous) at TC = 100°C 13.7 A

(2)

Drain current (pulsed) 88 A

(1)

Total dissipation at TC = 25°C 5.2 W

Derating factor 0.0416 W/°C

(3)

E

AS

T

stg

Single pulse avalanche energy 800 mJ

Operating junction temperature

j

Storage temperature

-55 to 150 °C

1. When mounted on FR-4 board of 1inch2, 2 oz Cu and ≤ 10 sec

2. Pulse width limited by package

3. Starting TJ = 25 °C, ID = 11 A, VDD = 48 V

Table 3. Thermal data

Symbol Parameter Typ. Max. Unit

Rthj-amb

Rthj-c

(1)

Thermal resistance junction-amb 20 24 °C/W

(2)

Thermal resistance junction-case (top drain) 0.8 1 °C/W

(3)

Thermal resistance junction-case (source) 2.2 2.7 °C/W

1. When mounted on FR-4 board of 1inch2, 2 oz Cu and ≤ 10sec

2. Steady state

3. Measured at source pin when the device is mounted on FR-4 board in steady state

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Electrical characteristics STK22N6F3

2 Electrical characteristics

(T

=25 °C unless otherwise specified)

CASE

Table 4. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source breakdown voltage

Zero gate voltage drain current (VGS = 0)

Gate body leakage current

= 0)

(V

DS

= 250 µA, VGS= 0 60 - - V

I

D

= Max rating,

V

DS

= Max rating,Tc=125 °C

V

DS

V

= ± 20V - - ±200 nA

GS

--

10

100µAµA

Gate threshold voltage VDS= VGS, ID = 250 µA 2 - 4 V

Static drain-source on resistance

V

= 10 V, ID= 11 A - 0.0055 0.006 Ω

GS

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

C

Q

Input capacitance

iss

Output capacitance

oss

Reverse transfer

rss

capacitance

Total gate charge

g

Gate-source charge

gs

Gate-drain charge

gd

=25 V, f=1 MHz, VGS=0 -

V

DS

=48 V, ID = 22 A

V

DD

=10 V

V

GS

Figure 14

f=1 MHz Gate DC Bias = 0

R

Gate input resistance

G

Test signal level = 20 mV open drain

2500

536

-

44

41

-

12

-

10

-0.9- Ω

pF pF pF

nC nC nC

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

= 30 V, ID= 11 A,

t

d(on)

t

d(off)

Turn-on delay time

t

Rise time

r

Turn-off delay time

t

Fall time

f

DD

=4.7 Ω, VGS= 10 V

R

G

Figure 13

VDD=30 V, ID= 11 A,

=4.7 Ω, VGS= 10 V

R

G

Figure 13

16

14

28

-

5

ns

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STK22N6F3 Electrical characteristics

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

Source-drain current

SD

Source-drain current

(1)

(pulsed)

(2)

Forward on voltage ISD= 22 A, VGS=0 - - 1.2 V

t

Reverse recovery time

rr

Reverse recovery charge

rr

Reverse recovery current

I

SD

V

DD

Figure 18

I

SDM

V

I

SD

Q

RRM

1. Pulse width limited by package

2. Pulsed: pulse duration = 300µs, duty cycle 1.5%

= 22 A, di/dt = 100 A/µs,

=30 V, Tj=150°C

--

49

-

91

3.7

22 88

A A

ns

-

nC

A

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Electrical characteristics STK22N6F3

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance

I

D

AM03397v1

(A)

1000

DS(on)

Operation in this area is

Limited by max R

100

10

Tj=150°C Tc=25°C

1

10ms

100ms

1s

Sinlge pulse

0.01

0.1

1

10

V

DS

(V)

Figure 4. Output characteristics Figure 5. Transfer characteristics

I

D

(A)

VGS=10V

7V

200

175

150

125

100

75

50

25

0

2

4

6

8

AM03398v1

6V

5V

V

DS

(V)

I

(A)

200

175

150

125

100

75

50

25

D

VDS=8V

0

2

4

6

8

AM03399v1

V

GS

(V)

Figure 6. Normalized BV

BV

DSS

(norm)

1.10

vs temperaure Figure 7. Static drain-source on resistance

DSS

AM03400v1

R

DS(on)

(Ω)

ID=11A

5.8

GS

=10V

V

AM03891v1

5.7

1.05

5.6

5.5

1.00

0.95

5.4

5.3

5.2

5.1

0.90

-50

-25

25

0

50

75

100

125

150

T

J

(°C)

5.0 10

0

5

15

20

I

D

(A)

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STK22N6F3 Electrical characteristics

Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations

V

GS

AM03892v1

(V)

12

10

VDD=48V

D

=22A

I

8

6

4

2

0

10

5

15

20

25

Q

g

(nC)

Figure 10. Normalized gate threshold voltage

V (norm)

vs temperature

GS(th)

1.1

1.0

0.9

0.8

AM03894v1

C

(pF)

6010

5010

4010

3010

Ciss

2010

1010

10

0

Crss

10

20

30

40 50

Coss

Figure 11. Normalized on resistance vs

temperature

R

DS(on)

(norm)

2.0

1.5

AM03893v1

V

DS

(V)

AM03895v1

0.7

1.0

0.6

0.5

0.4

-50

150

T

J

0

50

100

(°C)

0

-50

-25

25

0

50

75

100

125

T

J

(°C)

Figure 12. Source-drain diode forward

characteristics

V

SD

(V)

0.90

0.80

0.70

0.60

0.50 5

7

AM03896v1

TJ=-50°C

TJ=25°C

TJ=175°C

11

9

13

15

17

19

21

I

SD

(A)

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Test circuits STK22N6F3

3 Test circuits

Figure 13. Switching times test circuit for

PW

resistive load

VD

VGS

RG

RL

D.U.T.

2200

µF

3.3 µF

AM01468v1

V

DD

Figure 15. Test circuit for inductive load

G

25

Ω

switching and diode recovery times

A

D

D.U. T.

S

B

R

FAST DIODE

G

A

L=100µH

B

D

G

S

3.3

µF

1000

µF

V

DD

Figure 14. Gate charge test circuit

V

i=20V=VGMAX

PW

2200 µF

1kΩ

12V

IG=CONST

2.7kΩ

47kΩ

100Ω

100nF

D.U.T.

AM01469v1

Figure 16. Unclamped inductive load test

circuit

L

VD

ID

Vi

D.U. T.

2200

µF

3.3 µF

1kΩ

VDD

V

VDD

G

Pw

AM01470v1

AM01471v1

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

V(BR)DSS

VD

IDM

ID

VDD

0

AM01472v1

8/15 Doc ID 14850 Rev 2

0

10%

tdon

ton

90%

toff

tr

tdoff

tf

90%

10%

VDS

90%

V

GS

AM01473v1

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STK22N6F3 Test circuits

Figure 19. Gate charge waveform

Vds

Vgs(th)

Qgs1

Qgs2 Qgd

Id

Vgs

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Package mechanical data STK22N6F3

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK

®

packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

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STK22N6F3 Package mechanical data

Table 8. PolarPAK® (option “L”) mechanical data

mm inch

Ref.

Min. Typ. Max. Min. Typ. Max.

A 0.75 0.80 0.85 0.030 0.031 0.033

A1 0.05 0.002

b1 0.48 0.58 0.68 0.019 0.023 0.027

b2 0.41 0.51 0.61 0.016 0.020 0.024

b3 2.19 2.29 2.39 0.086 0.090 0.094

b4 0.89 1.04 1.19 0.035 0.041 0.047

b5 0.23 0.33 0.43 0.009 0.013 0.017

c 0.20 0.25 0.30 0.008 0.010 0.012

D 6 6.15 6.30 0.236 0.242 0.248

D1 5.74 5.89 6.04 0.226 0.232 0.238

E 5.01 5.16 5.31 0.197 0.203 0.209

E1 4.75 4.90 5.05 0.187 0.193 0.199

H1 0.23 0.009

H2 0.45 0.56 0.018 0.022

H3 0.31 0.41 0.51 0.012 0.016 0.020

H4 0.45 0.56 0.018 0.022

K1 4.22 4.37 4.52 0.166 0.172 0.178

K2 1.08 1.13 1.18 0.043 0.044 0.046

K3 1.37 0.054

K4 0.24 0.009

M1 4.30 4.50 4.70 0.169 0.177 0.185

M2 3.43 3.58 3.73 0.135 0.141 0.147

M3 0.22 0.009

M4 0.05 0.002

P1 0.15 0.20 0.25 0.006 0.008 0.010

T1 3.48 3.64 4.10 0.137 0.143 0.161

T2 0.56 0.76 0.95 0.022 0.030 0.037

T3 1.20 0.047

T4 3.90 0.154

T5 0.18 0.36 0.007 0.014

< 0° 10° 12° 0° 10° 12°

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Package mechanical data STK22N6F3

Figure 20. PolarPAK® (option “L”) drawings

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STK22N6F3 Package mechanical data

Figure 21. Recommended PAD layout

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Revision history STK22N6F3

5 Revision history

Table 9. Document revision history

Date Revision Changes

01-Jul-2008 1 First release

16-Apr-2009 2 Document status promoted from preliminary data to datasheet

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STK22N6F3

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Doc ID 14850 Rev 2 15/15