Page 1
General features
1
3
STGW35NB60SD
N-CHANNEL 35A - 600V - TO-247
Low Drop PowerMESH™ IGBT
V
Type
STGW35NB60SD 600V < 1.7V 35A
■ LOW ON-VOLTAGE DROP (V
■ LOW INPUT CAPACITANCE
■ HIGH CURRENT CAPABILITY
V
CES
CE(sat)
(Max )@ 25° C
CEsat
@100°C
)
I
C
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
™
IGBTs, with outstanding
performances.
Applications
■ LIGHT DIMMER
■ HID
■ WELDING
■ MOTOR CONTROL
■ STATIC RELAYS
2
TO-247
Internal schematic diagram
Order codes
Sales Type Marking Package Packagin g
STGW35NB60SD GW35NB60SD TO-247 TUBE
November 2005 1/13
Rev 1
www.st.com
13
Page 2
1 Electrical ratings STGW35NB60SD
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
CES
I
Note 4
C
Note 4
I
C
I
Note 1
CM
V
GE
I
f
P
TOT
T
T
stg
T
L
Table 2. Thermal resistance
Collector-Emitter Voltage (VGS = 0)
600 V
Collector Current (continuous) at 25°C 70 A
Collector Current (continuous) at 100°C 35 A
Collector Current (pulsed) 250 A
Gate-Emitter Voltage ± 20 V
Diode RMS Forward Current at TC = 25°C
Total Dis sipation at TC = 25°C
Operating Junction Temperature
j
30 A
200 W
– 55 to 150 °C
Storage Temperature
Maximum Lead Temperature for Soldering
Purpose (1.6mm from case, for 10sec.)
300 °C
Min. Typ. Max. Unit
Rthj-case Thermal Resist ance Junction- case (IGBT) -- -- 0.625 °C/W
Rthj-case Thermal Resist ance Junction- case (DIODE) -- -- 1.5 °C/W
Rthj-amb Thermal Resist ance Junction- am bient -- -- 50 °C/W
2/13
Page 3
STGW35NB60SD 2 Electrical characteristics
2 Electrical characteristics
(T
= 25 °C unless otherwise specified)
CASE
Table 3. Static
Symbol Parameter T est Conditions Min. T yp. Max. Unit
V
BR(CES)
V
CE(SAT)
V
GE(th)
I
CES
I
GES
g
Collectro-Emitter Breakdown
Voltage
Colle ct o r-Emitte r S at u ra tion
Voltage
Gate Threshold Voltage
Collector-Emitter Leakage
Current (V
GE
= 0)
Gate-Emitter Leak age
Current (V
fs
Forward Transconductance
CE
= 0)
I
= 1mA, VGE = 0
C
V
= 15V, IC= 20A, Tj= 25°C
GE
= 15V, IC= 20A, Tj= 125°C
V
GE
= VGE, IC= 250µA
V
CE
= Max Rating,Tc=25°C
V
CE
= Max Rating, Tc=125°C
V
CE
= ± 20V , VCE = 0
V
GE
V
= 10V, IC= 18A
CE
600 V
1.25
1.7 V
1.2
2.5 5 V
10
100
± 10 0 nA
20 S
Table 4. Dynamic
Symbol Parameter Test Conditions Min. Typ. Max. Unit
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
= 25V, f = 1 MHz, VGE = 0
V
CE
1820
167
27
V
µA
µA
pF
pF
pF
Q
g
Total Gate Charge
Q
ge
Q
gc
I
CL
Gate-Emitter Charge
Gate-Collecto r Char ge
Turn-Off SOA Minimum
Current
= 480V, IC = 20A,
V
CE
V
= 15V,
GE
(see Figure 17)
V
= 480V , Tj = 125°C
clamp
R
= 100Ω
G
83
115 nC
10
27
80 A
nC
nC
3/13
Page 4
2 Electric al characteristics STGW35NB60SD
Table 5. Switch in g on/off (ind uc tive load)
Symbol Parameter T est Conditions Min. T yp. Max. Unit
t
d(on)
t
(di/dt)
t
d(on)
t
(di/dt)
t
r(Voff
t
d(off
t
t
r(Voff
t
d(off
t
Turn-on Delay Time
r
Current Rise Ti me
Turn-on Curr ent Slope
on
Turn-on Delay Time
r
f
f
Current Rise Ti me
Turn-on Curr ent Slope
on
)
Off Voltage Rise Time
)
Turn-off De la y Tim e
Cur r e n t Fa ll Time
)
Off Voltage Rise Time
)
Turn-off De la y Tim e
Cur r e n t Fa ll Time
= 480V, IC = 20A
V
CC
= 100Ω, VGE= 15V, Tj= 25°C
R
G
(see Figure 3)
= 480V, IC = 20A
V
CC
= 100Ω, VGE= 15V, Tj= 125°C
R
G
(see Figure 3)
V
= 480V, IC = 20A,
cc
R
= 100Ω , VGE = 5V,TJ=25°C
GE
(see Figure 18)
= 480V, IC = 20A,
V
cc
=100Ω,VGE =15V, Tj=125°C
R
GE
(see Figure 18)
92
70
340
80
73
320
0.78
1.1
0.79
1.1
2.4
1.2
Table 6. Switching en ergy (inductive load)
Symbol Parame ter Test Conditions Min. Typ. Max. Unit
Note 2
Eon
E
off
Eon
E
off
Note 3
E
ts
Note 2
Note 3
E
ts
Turn-on Switching Losses
Turn-off Switching Losses
Total Switchin g Los s es
Turn-on Switching Losses
Turn-off Switching Losses
Total Switchin g Los s es
= 480V, IC = 20A
V
CC
=100Ω, VGE= 15V, Tj= 25°C
R
G
(see Figure 18)
= 480V, IC = 20A
V
CC
=100Ω, VGE= 15V, Tj= 125°C
R
G
(see Figure 18)
0.84
7.4
8.24
0.86
11.5
12.4
ns
ns
A/µs
ns
ns
A/µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ
mJ
mJ
4/13
Page 5
STGW35NB60SD 2 Electrical characteristics
Table 7. Collector-emitter diode
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
rr
t
a
Q
rr
I
rrm
S
t
rr
t
a
Q
rr
I
rrm
S
(1)Pu ls e w id th lim ited by ma x. junc t i on tem peratur e
(2) Eon is the tun-on losses when a typical diode i s used in the test circuit in figure 2 Eon include diode recovery energy. If the
IGBT is offered in a packag e with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
(3) Turn-off losses include also the tail of the collector current
(4) Calculated according to the iterative formula:
ICTC()
Forward O n -Voltage
f
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Softness fact or of the diode
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Softness fact or of the diode
T
–
--------------------------------------------------------------------------------------------------=
R
THJ C–VCESAT MAX()TCIC
JMAXTC
,()×
If = 10A
If = 10A, Tj = 125°C
If = 20A, V
= 25°C, di/dt = 100A/µs
T
j
= 40V,
R
(see Figure 19)
If = 20A, V
T
= 125°C, di/dt = 100A/µs
j
= 40V,
R
(see Figure 19)
1.3
1
44
32
66
3
0.375
88
56
237
5.4
0.57
2V
ns
ns
nC
ns
ns
nC
V
A
A
5/13
Page 6
2 Electric al characteristics STGW35NB60SD
2.1 Electrical characteristics (curves)
Figure 1. Output Characteristics Figure 2. Transfer Characteristics
Figure 3. Transconductance Figure 4. Normalized Collector-Emitter On
Voltage vs Temperature
Figure 5. Collector-Emitter on Volt age vs
Collector Current
6/13
Figure 6. Gate Threshold vs Temperature
Page 7
STGW35NB60SD 2 Electrical characteristics
Figure 7. Normalized Breakdown Voltag e vs
Temperature
Figure 9. Capacitance Variations Figure 10. Switching Losses vs Gate Charge
Figure 8. Gate Charge vs Gate-Emitter
Voltage
Figure 11. Switching Losses vs Temperature Figure 12. Switching Losses vs Collector
Current
7/13
Page 8
2 Electric al characteristics STGW35NB60SD
Figure 13. Thermal Impedance Figure 14. Turn-Off SOA
Figure 15. Emitter-Collector Diode
Characteristics
8/13
Page 9
STGW35NB60SD 3 Test Circuits
3 Test Circuits
Figure 16. Test Circuit for Inductive Load
Switching
Figure 18. Switching Waveform Figure 19. Diode Recovery Time Waveform
Figure 17. Gate Charge Test Circuit
9/13
Page 10
4 Package mechani cal data STGW35NB60SD
4 Package m echanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
available at: www.st.com
10/13
Page 11
STGW35NB60SD 4 Package mechanical data
TO-247 MECHANICAL DATA
DIM.
A 4.85 5.15 0.19 0.20
A1 2.20 2.60 0.086 0.102
b 1.0 1.40 0.039 0.055
b1 2.0 2.40 0.079 0.094
b2 3.0 3.40 0.118 0.134
c 0.40 0.80 0.015 0.03
D 19.85 20.15 0.781 0.793
E 15.45 15.75 0.608 0.620
e5.45 0.214
L 14.20 14.80 0.560 0.582
L1 3.70 4.30 0.14 0.17
L2 18.50 0.728
øP 3.55 3.65 0.140 0.143
øR 4.50 5.50 0.177 0.216
S5.50 0.216
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
11/13
Page 12
5 Revision Hist ory STGW35NB60SD
5 Revision History
Date Revision Changes
16-Nov-2005 1 Initial release.
12/13
Page 13
STGW35NB60SD 5 Revision History
I
s
o
d
b
ct
t
ot
a
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13/13
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