Datasheet stgp19nc60sd Datasheet

Page 1
Medium frequency PowerMESH™ IGBT
Features
V
Typ e
STGP19NC60SD 600V < 1.35V 20A
V
CES
CE(sat)
(typ)@150°C
@100°C
STGP19NC60SD
N-channel 600V - 20A - TO-220
I
C
■ Very low on-voltage drop (V
■ High input impedance (voltage driven)
■ IGBT co-packaged with ultrafast freewheeling
CE(sat)
diode.
■ Minimum power losses at 5 kHz in hard
switching
■ Optimized performance for medium operating
frequencies.
Application
■ Medium frequency motor control
Description
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
3
2
1
TO-220

Figure 1. Internal schematic diagram

Table 1. Device summary

Order code Marking Package Packaging
STGP19NC60SD GP19NC60SD TO-220 Tube
September 2007 Rev 3 1/14
www.st.com
Page 2
Contents STGP19NC60SD
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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Page 3
STGP19NC60SD Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit
V
CES
I
C
I
C
I
CP
I
I
FSM
V
P
TOT
T
1. Calculated according to the iterative formula:
2. Pulsed: width limited by max junction temperature allowed
Collector-emitter voltage (VGS = 0)
(1)
Collector current (continuous) at TC = 25°C
(1)
Collector current (continuous) at TC = 100°C
(2)
Pulsed collector current 80 A
Diode RMS forward current at TC = 25°C
F
Surge non repetitive forward current tp = 10ms sinusoidal
Gate-emitter voltage ±20 V
GE
Total dissipation at TC = 25°C
Operating junction temperature – 55 to 150 °C
j
T
–
ICTC()
---------------------------------- --------------------------------------------- -----------------------=
R
THJ C–VCESAT MAX()TCIC
JMAXTC
,()×
600 V
50 A
20 A
20 A
50 A
125 W

Table 2. Thermal resistance

Symbol Parameter Value Unit
Rthj-case
Thermal resistance junction-case max IGBT 1 °C/W
Thermal resistance junction-case max DIODE 3.0 °C/W
Rthj -amb Thermal resistance junction-ambient max 62.5 °C/W
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Page 4
Electrical characteristics STGP19NC60SD

2 Electrical characteristics

(T
=25°C unless otherwise specified)
CASE

Table 3. Static

Symbol Parameter Test conditions Min. Typ. Max. Unit
V
BR(CES)
V
CE(sat)
V
GE(th)
I
CES
I
GES
g
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate threshold voltage
Collector cut-off current
= 0)
(V
GE
Gate-emitter leakage current (V
Forward transconductance
fs
CE
= 0)
= 1mA, VGE= 0
I
C
VGE= 15V, IC= 12A
V
= 15V, IC=12A,Tc=150°C
GE
= VGE, IC= 250 µA
V
CE
= Max rating,TC= 25°C
V
CE
= Max rating,TC= 150°C
V
CE
VGE= ±20V, VCE= 0
= 15V, IC= 12A
V
CE
600 V
1.55
1.9 V
1.35
3.75 5.75 V
1501µA
±100 nA
10 S

Table 4. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit
C C C
Input capacitance
ies
Output capacitance
oes
Reverse transfer
res
capacitance
= 25V, f = 1MHz,
V
CE
= 0
V
GE
1190
135
28.5
V
mA
pF pF pF
Q Q Q
Total gate charge
g
Gate-emitter charge
ge
Gate-collector charge
gc
V
CE
V
GE
Figure 18
4/14
= 480V, IC = 12A,
= 15V,
54.5
8.7
25.8
nC nC nC
Page 5
STGP19NC60SD Electrical characteristics

Table 5. Switching on/off (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
(di/dt)on
t
d(on)
t
r
(di/dt)on
t
r(Voff)
t
d(Voff)
t
f
t
r(Voff)
t
d(Voff)
t
f
Turn-on delay time Current rise time Turn-on current slope
Turn-on delay time Current rise time Turn-on current slope
Off voltage rise time Turn-off delay time Current fall time
Off voltage rise time Turn-off delay time Current fall time
= 480V, IC = 12A
V
CC
= 10Ω, VGE= 15V,
R
G
Figure 19
= 480V, IC = 12A
V
CC
= 10Ω, VGE= 15V,
R
G
= 125°C
T
j
Figure 19
= 480V, IC = 12A
V
CC
R
= 10Ω, VGE= 15V,
G
Figure 19
= 480V, IC = 12A
V
CC
= 10Ω, VGE= 15V,
R
G
= 125°C
T
j
Figure 19
17.5
6.2
1870
17
6.5
1700
90 175 215
155 245 290

Table 6. Switching energy (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit
E
on
Turn-on switching losses
(1)
E
off
E
E
E
off
E
Turn-off switching losses Total switching losses
ts
on
Turn-on switching losses
(1)
Turn-off switching losses Total switching losses
ts
= 480V, IC = 12A
V
CC
R
= 10Ω, VGE= 15V,
G
Figure 17
VCC = 480V, IC = 12A
= 10Ω, VGE= 15V,
R
G
= 125°C
T
j
Figure 17
135 815 995
200 1175 1375
ns ns
A/µs
ns ns
A/µs
ns ns ns
ns ns ns
µJ µJ µJ
µJ µJ µJ
1. Turn-off losses include also the tail of the collector current

Table 7. Collector-emitter diode

Symbol Parameter Test conditions Min. Typ. Max. Unit
I
Q
I
Q
I
V
t
rr
rrm
t
rr
rrm
Forward on-voltage
f
Reverse recovery time Reverse recovery charge
rr
Reverse recovery current
Reverse recovery time Reverse recovery charge
rr
Reverse recovery current
= 12A
f
= 12A, Tj = 125°C
I
f
= 12A,VR = 40V,
I
f
T
= 25°C, di/dt = 100 A/µs
j
Figure 20
If = 12A,VR = 40V,
=125°C, di/dt = 100A/µs
T
j
Figure 20
2.3
2.0
31
29.5
1.9
48.5
70.5 3
V V
ns
nC
A
ns
nC
A
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Page 6
Electrical characteristics STGP19NC60SD

2.1 Electrical characteristics (curves)

Figure 1. Output characteristics Figure 2. Transfer characteristics
Figure 3. Transconductance Figure 4. Collector-emitter on voltage vs
temperature
Figure 5. Gate charge vs gate-source voltage Figure 6. Capacitance variations
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Page 7
STGP19NC60SD Electrical characteristics
Figure 7. Normalized gate threshold voltage
vs temperature
Figure 9. Normalized breakdown voltage vs
temperature
Figure 8. Collector-emitter on voltage vs
collector current

Figure 10. Switching losses vs temperature

Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector
current
7/14
Page 8
Electrical characteristics STGP19NC60SD

Figure 13. Turn-off SOA Figure 14. Forward voltage drop versus

forward current

Figure 15. Thermal impedance Figure 16. IC vs. frequency

8/14
Page 9
STGP19NC60SD Electrical characteristics

2.2 Frequency applications

For a fast IGBT suitable for high frequency applications, the typical collector current vs. maximum operating frequency curve is reported. That frequency is defined as follows:
f
= (PD - PC) / (EON + E
MAX
● The maximum power dissipation is limited by maximum junction to case thermal
resistance:
Equation 1
P
= ∆T / R
D
THJ-C
considering ∆T = TJ - TC = 125 °C- 75 °C = 50°C
● The conduction losses are:
Equation 2
P
= IC * V
C
CE(SAT)
* δ
with 50% of duty cycle, V
● Power dissipation during ON & OFF commutations is due to the switching frequency:
Equation 3
OFF
typical value @125°C.
CESAT
P
= (EON + E
SW
Typical values @ 125°C for switching losses are used (test conditions: V V
=15V, RG = 10 Ohm). Furthermore, diode recovery energy is included in the EON (see
GE
Note 1), while the tail of the collector current is included in the E
OFF
) * freq.
CE
measurements.
OFF
= 480V,
9/14
Page 10
Test circuit STGP19NC60SD

3 Test circuit

Figure 17. Test circuit for inductive load
switching

Figure 18. Gate charge test circuit

Figure 19. Switching waveform Figure 20. Diode recovery time waveform

10/14
Page 11
STGP19NC60SD Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Page 12
Package mechanical data STGP19NC60SD
TO-220 mechanical data
Dim
Min Typ Max Min Typ Max
mm inch
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.14 1.70 0.044 0.066
c0.49 0.70 0.019 0.027
D 15.25 15.75 0.6 0.62
D1 1.27 0.050
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F1.23 1.32 0.048 0.051 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107
L13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154
L20 16.40 0.645 L3028.90 1.137
∅P 3.75 3.85 0.147 0.151
Q2.65 2.95 0.104 0.116
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Page 13
STGP19NC60SD Revision history

5 Revision history

Table 8. Document revision history

Date Revision Changes
02-Jul-2007 1 First release
13-Aug-2007 2 From target to preliminary version
18-Sep-2007 3 Added new section: Electrical characteristics (curves)
13/14
Page 14
STGP19NC60SD
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