Page 1
General features
1
3
STGP10NB60SD
N-CHANNEL 10A - 600V - TO-220
Low Drop PowerMESH™ IGBT
V
Type
STGP10NB60SD 600V < 1.7V 10A
■ HIGH CURRENT CAPABILITY
■ HIGH INPUT IMPEDANCE (VOLTAGE
V
CES
CE(sat)
(Max)@ 25°C
I
C
@100°C
DRIVEN)
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
™
IGBTs, with outstanding
performances. The suffix "S" identifies a family
optimized achieve minimum on-voltage drop for
low frequency application (<1kHz).
Applications
■ LIGHT DIMMER
■ STATIC RELAYS
■ MOTOR CONTROL
2
TO-220
Internal schematic diagram
Order codes
Sales Type Marking Package Packagin g
STGP10NB60SD GP10NB60SD TO-220 TUBE
Rev 1
November 2005 1/12
www.st.com
12
Page 2
1 Electrical ratings STGP10NB60SD
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
CES
I
Note 5 Collector Current (continuous) at TC = 25°C
C
Note 5 Collector Current (continuous) at TC = 100°C
I
C
I
Note 1
CM
V
GE
P
TOT
T
stg
T
Table 2. Thermal resistance
Collector-Emitter Voltage (VGS = 0)
600 V
20 A
10 A
Collector Current (pulsed) 80 W
Gate-Emitter Voltage ±20 A
Total Dis sipation at TC = 25°C
31.5 W
Storage Temperature
– 65 to 150 °C
Operating Junction Temperature
j
Rthj-case Thermal Resistance Junction-case Max 4.7 °C/W
Rthj-amb Thermal Resist ance Junction- am bient Max 62.5 °C/W
Rthc-sink Thermal resistance Case-sink Typ 0.5
2/12
Page 3
STGP10NB60SD 2 Electrical characteristics
2 Electrical characteristics
(T
= 25 °C unless otherwise specified)
CASE
Table 3. Static
Symbol Parameter Test Conditions Min. T yp. Max. Unit
V
BR(CES)
V
BR(CES)
V
CE(sat)
V
GE(th)
I
CES
I
GES
g
Collector-Emitter Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Colle ct o r-Emitte r S at u ra ti o n
Voltage
Gate Threshold Voltage
Collector cut-off Current
= 0)
(V
GE
Gate-Emitter Leak age
Current (V
fs
Forward Transconductance
CE
= 0)
I
= 250µA, VGE= 0
C
I
= 1mA, VGE= 0
C
V
= 15V, IC= 5A
GE
V
= 15V, IC= 10A
GE
=15V, IC= 10A, Tc= 125°C
V
GE
V
= VGE, IC= 250µA
CE
= Max Rating,TC= 25°C
V
CE
V
=Max Rating,TC= 125°C
CE
= ±20V , VCE= 0
V
GE
= 25V, IC= 10A
V
CE
600 V
20 V
1.15
1.35
1.7
1.25
2.5 5 V
10
100
±100 nA
5S
Table 4. Dynamic
V
V
V
µA
µA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
C
ies
C
oes
C
res
Q
I
CL
Input Capacitance
= 25V , f = 1MHz, VGE = 0
Output Capacitance
V
CE
Reverse Transfer Capacitance
= 400V, IC = 5A,
V
Total Gate Charge
g
Latching Current
CE
= 15V, (see Figure 17)
V
GE
=480V, RG=1kΩ
V
clamp
Tj=125°C
20 A
610
65
12
33 nC
pF
pF
pF
3/12
Page 4
2 Electric al characteristics STGP10NB60SD
Table 5. Switching On/Off (inductive load)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
(di/dt)
t
c
tr(V
t
t
c
tr(V
t
Turn-on Delay Time
r
Current Rise Ti me
Turn-on Curr ent Slope
on
Cross-over Ti me
)
Off Voltage Rise Time
off
f
Cur r e n t Fa ll Time
Cross-over Ti me
)
Off Voltage Rise Time
off
f
Cur r e n t Fa ll Time
= 480V, IC = 10A
V
CC
= 1kΩ, VGE= 15V, Tj= 25°C
R
G
(see Figure 18)
= 480V, IC = 10A
V
CC
R
= 1kΩ, VGE= 15V,Tj= 25°C
G
(see Figure 18)
V
= 480V, IC = 10A
CC
R
= 1kΩ, VGE= 15V, Tj=125°C
G
(see Figure 18)
0.7
0.46
8
2.2
1.2
1.2
3.8
1.2
1.9
Table 6. Switching energy (inductive load)
Symbol Parameter Test Conditions Min. T yp. Max. Unit
Eon
E
off
Note 3
Note 4
E
ts
Turn-on Switching Losses
Turn-off Switching Losses
Total Switchin g Los s es
= 480V, IC = 10A
V
CC
=1kΩ, VGE= 15V, Tj= 25°C
R
G
(see Figure 18)
0.6
5.0
5.6
Table 7. Collector-emitter diode
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
I
Q
I
FM
V
t
rrm
F
rr
rr
Forward Current
Forward Current pulsed
Forward O n -Voltage
f
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
= 3.5A
I
f
I
= 3.5A, Tj = 125°C
f
= 7A ,VR = 35V,
I
f
Tj =125°C, di/dt = 100A/µs
(see Figure 19)
1.4
1.15
50
70
2.7
7
56
1.9 V
ns
ns
A/µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
A
A
V
ns
nC
A
(1)Pu ls e w id th lim ited by max. junction te m pe rature
(2) Puls ed: Pulse durat ion = 300 µs, duty cycle 1.5%
(3)Eon is the tun-on losses when a typical diode i s used in the test circuit in figure 2. If the IG BT is off ered in a package with a
co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperatur e (25°C and 125°C )
(4) Turn-off losses include also the tail of the collector current
(5) Calculated according to the iterative formula:
T
–
ICTC()
--------------------------------------------------------------------------------------------------=
R
THJ C–VCESAT MAX()TCIC
JMAXTC
,()×
4/12
Page 5
STGP10NB60SD 2 Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 1. Safe Operating Area Figure 2. Thermal Impedance
Figure 3. Output Characteristics Figure 4. Transfer Characteristics
Figure 5. Transconductance Figure 6. Collector-Emitter on Voltage vs
Temperature
5/12
Page 6
2 Electric al characteristics STGP10NB60SD
Figure 7. Collector-Emitter on Voltage vs
Collector Current
Figure 8. Gate Threshold Voltage vs
Temperature
Figure 9. Capacitance Variations Figure 10. Gate Charge vs Gate-Emi tter
Voltage
Figure 11. Switching Losses vs Gate
Resistance
6/12
Figure 12. Switching Losses vs Collector
Current
Page 7
STGP10NB60SD 2 Electrical characteristics
Figure 13. Switching Losses vs Temperature Figure 14. Normalized Breakdown Voltage vs
Temperature
Figure 15. Emitter-Collector Diode
Characteristics
7/12
Page 8
3 Test Circuits STGP10NB60SD
3 Test Circuits
Figure 16. Test Circuit for Inductive Load
Switching
Figure 18. Switching Waveform Figure 19. Diode Recovery Time Waveform
Figure 17. Gate Charge Test Circuit
8/12
Page 9
STGP10NB60SD 4 Package mechanical data
4 Package mechanical da ta
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOP ACK is an ST trademark. ECOPACK specifications are
available at: www.st.com
9/12
Page 10
4 Package mechani cal data STGP10NB60SD
TO-220 MECHANICAL DATA
DIM.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
10/12
Page 11
STGP10NB60SD 5 Revision History
5 Revision His tory
Date Revision Changes
18-Nov-2005 1 Initial release.
11/12
Page 12
5 Revision Hist ory STGP10NB60SD
I
s
o
d
b
ct
t
ot
a
nformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequence
f use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is grante
y implic ation or oth erwise unde r any patent or patent rights of S TM i croelectronics. Specification s mentioned in this pub l ic at i on are sub je
o change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are n
uthoriz ed for use as crit ical component s i n l i fe support devices or systems wi th out express wr i tt en approval of STM i croelectronics.
The ST logo is a registered trademark of STM i croelectroni cs.
All other nam es are the property of their respective ow ners
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12/12
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