IPM, 3-phase inverter - 14 A, 600 V short-circuit rugged IGBT
Features
■ IPM 14 A, 600 V 3-phase IGBT inverter bridge
including control ICs for gate driving and freewheeling diodes
■ Short-circuit rugged IGBTs
■ V
■ 3.3 V, 5 V, 15 V CMOS/TTL inputs
comparators with hysteresis and pull down /
pull up resistors
■ Undervoltage lockout
■ Internal bootstrap diode
■ Interlocking function
■ Shutdown function
■ Comparator for fault protection against
overtemperature and overcurrent
■ DBC substrate leading to low thermal
resistance
■ Isolation rating of 2500 Vrms/min
Applications
■ 3-phase inverters for motor drives
■ Home appliances, such as washing machines,
refrigerators, air conditioners and sewing
machines
negative temperature coefficient
CE(sat)
STGIPS14K60
SDIP-25L
Description
This intelligent power module provides a
compact, high performance AC motor drive in a
simple, rugged design. Combining ST proprietary
control ICs with the most advanced short-circuitrugged IGBT system technology, this device is
ideal for 3-phase inverters in applications such as
home appliances and air conditioners. SLLIMM™
is a trademark of STMicroelectronics.
3. Pulse width limited by max junction temperature
Table 4.Control part
SymbolParameterValueUnit
V
V
V
OUT
V
V
CC
CIN
boot
IN
Output voltage applied between
OUT
OUT
U,
OUTW - GND
V,
Low voltage power supply-0.3 to +21V
Comparator input voltage-0.3 to VCC +0.3V
Bootstrap voltage applied between
- OUTi for i = U, V, W
V
boot i
Logic input voltage applied between HIN, LIN and
GND
V
- 21 to V
boot
boot
-0.3 to 620V
-0.3 to 15V
+ 0.3V
V
SD/OD
dV
OUT
Open drain voltage-0.3 to 15V
/dt Allowed output slew rate50V/ns
Doc ID 15927 Rev 65/20
Page 6
Electrical ratingsSTGIPS14K60
Table 5.Total system
SymbolParameterValueUnit
V
ISO
(1)
T
j
T
C
1. The maximum junction temperature rating of the power chips integrated within the SDIP module is 150°C
(@TC ≤ 100°C). To ensure safe operation of the SDIP module, the average junction temperature should be
limited to T
Isolation withstand voltage applied between each
pin and heatsink plate (AC voltage, t = 60 sec.)
Operating junction temperature-40 to 150°C
Module case operation temperature-40 to 125°C
≤ 125°C (@TC ≤ 100°C).
j(avg)
2.2 Thermal data
Table 6.Thermal data
SymbolParameterValueUnit
R
thJC
Thermal resistance junction-case single IGBT3°C/W
Thermal resistance junction-case single diode5.5°C/W
2500V
6/20 Doc ID 15927 Rev 6
Page 7
STGIPS14K60Electrical characteristics
3 Electrical characteristics
TJ = 25 °C unless otherwise specified.
Table 7.Inverter part
Val ue
SymbolParameterTest conditions
V
CE(sat)
I
CES
V
Collector-emitter
saturation voltage
Collector-cut off current
(1)
(V
= 0 “logic state”)
IN
Diode forward voltageV
F
VCC = V
= 7 A
I
C
V
CC
= 7 A, TJ = 125 °C
I
C
V
CE
(1)
IN
= 15 V, V
boot
= V
= 15 V, V
boot
= 600 V, V
CC
= V
IN
IN
Boot
= 0 “logic state”, IC = 7 A-2.1V
Inductive load switching time and energy
Min.Typ.Max.
(1)
= 0 ÷ 5 V,
(1)
= 0 ÷ 5 V,
-2.12.5
-1.8
= 15 V-150µA
Unit
V
t
t
c(on)
t
t
c(off)
E
E
1. Applied between HIN
Note:t
Turn-on time
on
Crossover time (on)-130
Turn-off time-320
off
Crossover time (off)-110
Reverse recovery time-130
t
rr
Turn-on switching losses-150
on
Turn-off switching losses-90
off
and t
ON
the switching time of IGBT itself under the internally given gate driving condition.
-270
V
= 300 V,
DD
= V
V
CC
(1)
V
IN
= 15 V,
boot
= 0 ÷ 5 V,
IC = 7 A
(see Figure 5)
, LINi and GND for i = U, V, W (LIN inputs are active-low).
i
include the propagation delay time of the internal drive. t
OFF
C(ON)
and t
C(OFF)
ns
µJ
are
Doc ID 15927 Rev 67/20
Page 8
Electrical characteristicsSTGIPS14K60
Figure 3.Switching time test circuit
Figure 4.Switching time definition
100% IC 100%IC
t
rr
ICIC
VIN
t
OFF
VIN(OFF)
10%VCE10%IC
VIN(ON)
VIN
VCE
t
ON
10% IC 90%IC 10%VCE
t
C(ON)
(a) turn-on
Note:Figure 4 "Switching time definition" refers to HIN inputs (active high). For LIN
low), VIN polarity must be inverted for turn-on and turn-off.
t
C(OFF)
(b) turn-off
VCE
AM09223V1
inputs (active
8/20 Doc ID 15927 Rev 6
Page 9
STGIPS14K60Electrical characteristics
3.1 Control part
Table 8.Low voltage power supply (VCC = 15 V)
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
cc_hys
V
cc_thONVcc
V
cc_thOFFVcc
I
qccu
I
qcc
Vcc UV hysteresis1.21.51.8V
UV turn ON threshold11.51212.5V
UV turn OFF threshold 1010.511V
Undervoltage quiescent
supply current
Quiescent current
VCC = 10 V
SD/OD = 5 V; LIN = 5 V;
HIN = 0, CIN = 0
= 15 V
V
cc
/OD = 5 V; LIN = 5 V
SD
450µA
3.5mA
HIN = 0, CIN = 0
V
ref
Internal comparator (CIN)
reference voltage
0.50.540.58V
Table 9.Bootstrapped voltage (VCC = 15 V)
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
BS_hys
V
BS_thON
V
BS_thOFF
I
QBSU
I
QBS
V
UVhysteresis1.21.51.8V
BS
V
UVturn ON threshold 10.611.512.4V
BS
V
UVturn OFF threshold 9.11010.9V
BS
Undervoltage VBS quiescent
current
VBS quiescent current
VBS = 10 V
/OD = 5 V; LIN and
SD
HIN = 5 V; CIN = 0
= 15 V
V
BS
/OD = 5 V; LIN and
SD
70110µA
150210µA
HIN = 5 V; CIN = 0
R
DS(on)
Bootstrap driver on resistance LVG ON120Ω
Table 10.Logic inputs (VCC = 15 V)
SymbolParameterTest conditionsMin.Typ.Max.Unit
V
Low logic level voltage0.8V
il
V
I
HINh
I
HINl
I
LINl
I
LINh
I
SDh
I
SDl
DtDead timesee Figure 7600ns
High logic level voltage2.25V
ih
HIN logic “1” input bias current HIN = 15 V110175260µA
Shut down to high / low side
driver propagation delay
Comparator triggering to high /
t
isd
low side driver turn-off
propagation delay
= 1 V -3µA
CP+
= - 3 mA -0.5V
I
od
/OD pulled to 5 V through
SD
100 kΩ resistor
= 180 pF; Rpu = 5 kΩ-60V/µsec
L
V
= 0, V
OUT
V
= 0 to 3.3 V
IN
boot
= VCC,
-90130ns
50125200
Measured applying a voltage
step from 0 V to 3.3 V to pin
CIN
i
50200250
Table 12.Truth table
Condition
Shutdown enable
half-bridge tri-state
Interlocking
half-bridge tri-state
0 ‘’logic state”
half-bridge tri-state
1 “logic state”
low side direct driving
1 “logic state”
high side direct driving
Logic input (V
SD
/ODLINHINLVGHVG
LXXLL
HLHLL
HHL L L
HLLHL
HHHLH
)Output
I
ns
Note:X: don’t care
10/20 Doc ID 15927 Rev 6
Page 11
STGIPS14K60Electrical characteristics
)
C2-3
;!=
F
3).% ;(Z=
FSWK(Z
FSWK(Z
FSWK(Z
6
0.
6-ODULATIONINDEX
0& 4J#4C#
Figure 5.Maximum I
switching frequency
;!=
C2-3
)
4C#
current vs.
C(RMS)
6
6-ODULATIONINDEX
0.
0&4J#F
(1)
3).%
4C#
(Z
F
SW
Figure 6.Maximum I
;K(Z=
1. Simulated curves refer to typical IGBT parameters and maximum R
thj-c.
(1)
C(RMS)
current vs. f
SINE
Doc ID 15927 Rev 611/20
Page 12
Electrical characteristicsSTGIPS14K60
3.2 Waveforms definitions
Figure 7.Dead time and interlocking waveforms definitions
LIN
CONTROL SIGNAL EDGES
OVERLAPPED:
INTERLOCKING + DEAD TIME
CONTROL SIGNALS EDGES
SYNCHRONOUS (*):
DEAD TIME
CONTROL SIGNALS EDGES
NOT OVERLAPPED,
BUT INSIDE THE DEAD TIME:
DEAD TIME
HIN
LVG
HVG
gate driver outputs OFF
(HALF-BRIDGE TRI-STATE)
LIN
HIN
LVG
HVG
gate driver outputs OFF
(HALF-BRIDGE TRI-STATE)
LIN
HIN
LVG
HVG
gate driver outputs OFF
(HALF-BRIDGE TRI-STATE)
INTERLOCKING
DTLH
gate driver outputs OFF
(HALF-BRIDGE TRI-STATE)
DTLHDTHL
gate driver outputs OFF
(HALF-BRIDGE TRI-STATE)
LH
DT
gate driver outputs OFF
(HALF-BRIDGE TRI-STATE)
INTERLOCKING
DTHL
DT
HL
CONTROL SIGNALS EDGES
NOT OVERLAPPED,
OUTSIDE THE DEAD TIME:
DIRECT DRIVING
HIN
LVG
HVG
gate driver outputs OFF
(HALF-BRIDGE TRI-STATE)
DTLH
gate driver outputs OFF
(HALF-BRIDGE TRI-STATE)
DTHL
(*) HIN and LIN can be connected together and driven by just one control signal
LIN
12/20 Doc ID 15927 Rev 6
Page 13
STGIPS14K60Smart shutdown function
4 Smart shutdown function
The STGIPS14K60 integrates a comparator for fault sensing purposes. The comparator
non-inverting input (CIN) can be connected to an external shunt resistor in order to
implement a simple over-current protection function. When the comparator triggers, the
device is set in shutdown state and both its outputs are set to low level leading the halfbridge in tri-state. In the common overcurrent protection architectures the comparator output
is usually connected to the shutdown input through a RC network, in order to provide a
mono-stable circuit, which implements a protection time that follows the fault condition. Our
smart shutdown architecture allows to immediately turn-off the output gate driver in case of
overcurrent, the fault signal has a preferential path which directly switches off the outputs.
The time delay between the fault and the outputs turn-off is no more dependent on the RC
values of the external network connected to the shutdown pin. At the same time the internal
logic turns on the open drain output and holds it on until the shutdown voltage goes below
the logic input lower threshold. Finally the smart shutdown function provides the possibility
to increase the real disable time without increasing the constant time of the external RC
network.
Figure 8.Smart shutdown timing waveforms
comp
Vref
CP+
PROTECTION
HIN/LIN
HVG/LVG
SD/OD
upper
threshold
lower
threshold
open drain gate
(internal)
the driver outputs are set in SD state
immediately after the comparator
triggering even if the SD signal
Fast shut down:
has not yet reach
the lower input threshold
1
real disable time
TIME CONSTANTS
= (RON_OD // RSD)
1
= RSD
2
2
C
SD
C
SD
SHUT DOWN CIRCUIT
V
BIAS
RSD
CSD
SD/OD
RON_OD
SMART
SD
LOGIC
FROM/TO
CONTROLLER
Note:Pls refer to Table 11: Sense comparator characteristics (VCC = 15 V) for inter nal
propagation delay time details.
Doc ID 15927 Rev 613/20
Page 14
Applications informationSTGIPS14K60
+
5 Applications information
Figure 9.Typical application circuit
VDC
M
Rshunt
P
U
D1
T1
Rg
OUT
HVG
Vboot
LIN
SD/OD
HIN
Nu
D2
T2
Rg
LVG
CP+
VCC
GND
DT
Cdt
Rdt
Cvcc
V
D3
T3
Rg
OUT
HVG
Vboot
LIN
SD/OD
HIN
Nv
D4
T4
Rg
LVG
CP+
VCC
GND
DT
RdtCdt
Cvcc
W
D5
T5
Rg
OUT
HVG
Vboot
LIN
SD/OD
HIN
Nw
D6
R
C
T6
Rg
LVG
CP+
VCC
GND
DT
Cdt
Rdt
Cvcc
VBOOT U
OUT U
Cbu
VCC
HIN-U
LIN-U
OUT V
LIN-V
GND
VBOOT V
Cbv
VCC
CONTROLLER
14/20 Doc ID 15927 Rev 6
HIN-V
HIN-W
LIN-W
VBOOT W
OUT W
Cbw
SD/OD
Rsd
Csd
CIN
3.3V/5V Line
AM05001v1
Page 15
STGIPS14K60Applications information
5.1 Recommendations
●Input signal HIN is active high logic. A 85 kΩ(typ.) pull down resistor is built-in for each high side
input. If an external RC filter is used, for noise immunity, pay attention to the variation of the input
signal level.
●Input signal /LIN is active low logic. A 720 kΩ (typ.) pull-up resistor, connected to an
internal 5V regulator through a diode, is built-in for each low side input.
●To prevent the input signals oscillation, the wiring of each input should be as short as
possible.
●By integrating an application specific type HVIC inside the module, direct coupling to
MCU terminals without any opto-coupler is possible.
●Each capacitor should be located as nearby the pins of IPM as possible.
●Low inductance shunt resistors should be used for phase leg current sensing.
●Electrolytic bus capacitors should be mounted as close to the module bus terminals as
possible. Additional high frequency ceramic capacitor mounted close to the module
pins will further improve performance.
●The SD/OD signal should be pulled up to 5 V / 3.3 V with an external resistor (see
Section 4: Smart shutdown function for detailed info).
Table 13.Recommended operating conditions
SymbolParameterConditions
V
V
V
t
dead
f
PWM
PN
CC
BS
Supply VoltageApplied between P-Nu, Nv, Nw300400V
Control supply voltage Applied between VCC-GND13.51518V
High side bias voltage
Blanking time to
prevent Arm-short
PWM input signal
Applied between V
i = U, V, W
For each input signal1µs
-40°C < T
< 100°C
c
-40°C < Tj < 125°C
BOOTi
-OUTi for
Val ue
Unit
Min.Typ.Max.
1318V
20kHz
Doc ID 15927 Rev 615/20
Page 16
Package mechanical dataSTGIPS14K60
6 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
Please refer to dedicated technical note TN0107 for mounting instructions.
Table 14.SDIP-25L mechanical data
(mm.)
Dim.
Min.Typ.Max.
A43.9044.4044.90
A11.151.351.55
A21.401.601.80
A338.9039.4039.90
B21.5022.0022.50
B111.2511.8512.45
B224.7025.2025.70
C5.005.406.00
C16.507.007.50
C211.2011.7012.20
e2.152.352.55
e13.403.603.80
e24.504.704.90
e36.306.506.70
D33.30
D15.55
E11.20
E11.40
F0.851.001.15
F10.350.500.65
R1.551.751.95
T0.450.550.65
V0°6°
16/20 Doc ID 15927 Rev 6
Page 17
STGIPS14K60Package mechanical data
Figure 10. SDIP-25L drawing dimensions data
8154676_G
Doc ID 15927 Rev 617/20
Page 18
Package mechanical dataSTGIPS14K60
Figure 11. SDIP-25L tube dimensions
18/20 Doc ID 15927 Rev 6
8304142_A
Page 19
STGIPS14K60Revision history
7 Revision history
Table 15.Document revision history
DateRevisionChanges
25-Jun-20091Initial release.
05-Aug-20092Reduced V
Document status promoted from preliminary data to datasheet.
Updated package mechanical data, Table 7: Inverter part,
15-Jun-20103
Figure 5: Maximum IC(RMS) current vs. switching frequency
and Figure 6: Maximum IC(RMS) current vs. fSINE (1).
Minor text changes to improve readability.
value on Ta bl e 7 .
CE(sat)
08-Nov-20104
09-Mar-20115
04-Nov-20116
Updated Ta b le 3 , 5, 8, 9, 10 and Ta bl e 1 1 .
Modified: Figure 5 and Figure 6.
Updated title with SLLIMM™ in cover page, added SDIP-25L
tube dimensions Figure 11 on page 18.
Updated title with SLLIMM™ (small low-loss intelligent molded
module) IPM, 3-phase inverter - 14 A, 600 V short-circuit
rugged IGBT in cover page and SDIP-25L mechanical data
Table 14 on page 16, Figure 10 on page 17.
Doc ID 15927 Rev 619/20
Page 20
STGIPS14K60
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