Page 1
4.5 A, 600 V very fast IGBT with Ultrafast diode
DPAK
TAB
Features
■ Minimal tail current
■ Low conduction and switching losses
■ Ultrafast soft recovery antiparallel diode
STGD3HF60HD
Applications
Motor drive
Description
The STGD3HF60HD is based on a new advanced
planar technology concept to yield an IGBT with
more stable switching performance (E
temperature, as well as lower conduction losses.
versus
off)
3
1
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes Marking Package Packaging
STGD3HF60HDT4 GD3HF60HD DPAK Tape and reel
December 2010 Doc ID 17690 Rev 3 1/16
www.st.com
16
Page 2
Contents STGD3HF60HD
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/16 Doc ID 17690 Rev 3
Page 3
STGD3HF60HD Electrical ratings
ICTC()
T
jmax()TC
–
R
thj c–
V
CE sat()max()Tjmax()ICTC
(),()×
--------------------------------------------------------------------------------------------------------- -=
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CES
(1)
I
C
(1)
I
C
(2)
I
CL
(3)
I
CP
V
GE
I
F
I
FSM
P
TOT
T
j
1. Calculated according to the iterative formula:
2. Vclamp = 80%,(V
3. Pulse width limited by maximum junction temperature and turn-off within RBSOA.
Collector-emitter voltage (VGE = 0) 600 V
Continuous collector current at TC = 25 °C 7.5 A
Continuous collector current at TC = 100 °C 4.5 A
Turn-off latching current 18 A
Pulsed collector current 18 A
Gate-emitter voltage ±20 V
Diode RMS forward current at TC = 25 °C 10 A
Surge non repetitive forward current tp=10ms sinusoidal 25 A
Total dissipation at TC = 25 °C 38 W
Operating junction temperature - 55 to 150 °C
), Tj =150°C, RG = 10 Ω, VGE = 15 V.
CES
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
R
thj-amb
Thermal resistance junction-case IGBT 3.3 °C/W
Thermal resistance junction-case diode 5 °C/W
Thermal resistance junction-ambient 100 °C/W
Doc ID 17690 Rev 3 3/16
Page 4
Electrical characteristics STGD3HF60HD
2 Electrical characteristics
(Tj=25 °C unless otherwise specified).
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
Collector-emitter
V
(BR)CES
V
CE(sat)
breakdown voltage
= 0)
(V
GE
Collector-emitter
saturation voltage
= 1 mA 600 V
I
C
= 15 V, IC= 0.5 A, Tj=125°C
V
GE
= 15 V, IC= 1.5 A
V
GE
VGE= 15 V, IC= 1.5 A, Tj=125°C
1.4
2.45
1.85
2.95 V
V
GE(th)
I
CES
I
GES
g
Gate threshold voltage VCE= VGE, IC= 250 µA 3.75 5.75 V
Collector cut-off current
= 0)
(V
GE
Gate-emitter leakage
current (V
Forward
fs
transconductance
CE
= 0)
V
= 600 V
CE
= 600 V, Tj= 125 °C
V
CE
V
= ±20 V ±100 nA
GE
= 15 V, IC= 1.5 A 1.5 S
V
CE
2501µA
Table 5. Dynamic electrical characteristics
Symbol Parameter T est conditions Min. T yp. Max. Unit
C
C
C
Q
Q
Q
Input capacitance
ies
Output capacitance
oes
Reverse transfer
res
capacitance
Total gate charge
g
Gate-emitter charge
ge
Gate-collector charge
gc
= 25 V, f = 1 MHz,
V
CE
VGE = 0
VCE = 480 V, IC = 1.5 A,
VGE = 15 V
(see Figure 18)
152
-
14
-
3
12
-
2
-
6
mA
pF
pF
pF
nC
nC
nC
4/16 Doc ID 17690 Rev 3
Page 5
STGD3HF60HD Electrical characteristics
Table 6. Switching on/off (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
(di/dt)
t
d(on)
t
(di/dt)
t
r(Voff
t
d(off
t
t
r(Voff
t
d(off
t
Turn-on delay time
Current rise time
r
Turn-on current slope
on
Turn-on delay time
Current rise time
r
Turn-on current slope
on
)
Off voltage rise time
)
Turn-off delay time
Current fall time
f
)
Off voltage rise time
)
Turn-off delay time
Current fall time
f
VCC = 400 V, IC = 1.5 A
= 100 Ω, V
R
G
GE
= 15 V
(see Figure 19)
VCC = 400 V, IC = 1.5 A
RG = 100 Ω, V
=125 °C (see Figure 19)
T
j
= 400 V, IC = 1.5 A,
V
CC
= 100 Ω, V
R
GE
GE
GE
= 15 V,
= 15 V
(see Figure 19)
VCC = 400 V, IC = 1.5 A,
= 100 Ω, VGE =15 V,
R
GE
Tj = 125 °C (see Figure 19)
11
-
4
-
285
10
-
5
-
265
26
-
60
-
50
64
-
69
-
71
Table 7. Switching energy (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
E
on
E
off
E
E
on
E
off
E
1. Eon is the turn-on losses when a typical diode is used in the test circuit in (see Figure 20). If the IGBT is
offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs and diode
are at the same temperature (25°C and 125°C).
2. Turn-off losses include also the tail of the collector current.
Turn-on switching losses
(2)
Turn-off switching losses
Total switching losses
ts
(1)
Turn-on switching losses
(2)
Turn-off switching losses
Total switching losses
ts
VCC = 400 V, IC = 1.5 A
RG = 100 Ω, VGE=15 V
(see Figure 19)
= 400 V, IC = 1.5 A
V
CC
= 100 Ω, V
R
G
= 125 °C (see Figure 19)
T
j
GE
= 15 V,
19
-
12
-
31
38
-
35
-
73
ns
ns
A/µs
ns
ns
A/µs
ns
ns
ns
ns
ns
ns
µJ
µJ
µJ
µJ
µJ
µJ
Table 8. Collector-emitter diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
1.4
1.8
85
124
3
114
194
3.5
I
I
V
Q
rrm
Q
rrm
Forward on-voltage
F
t
Reverse recovery time
rr
Reverse recovery charge
rr
Reverse recovery current
t
Reverse recovery time
rr
Reverse recovery charge
rr
Reverse recovery current
IF = 1.5 A
= 1.5 A, Tj=125 °C
I
F
IF = 1.5 A, VR = 40 V,
di/dt = 100 A/μs
(see Figure 20)
IF = 1.5 A,VR = 40 V,
Tj =125 °C, di/dt = 100 A/μs
(see Figure 20)
-
1.15
-
-
Doc ID 17690 Rev 3 5/16
V
ns
nC
A
ns
nC
A
Page 6
Electrical characteristics STGD3HF60HD
I
C
6
4
2
0
0
4
V
CE
(V)
8
(A)
2
6
8
10
8V
6V
7V
VGE=15V
12
14
16
9V
10V
11V
12V
13V
AM08674v1
I
C
1.5
1.0
0.5
0
0
2
V
CE
(V)
4
(A)
1
3
2.0
2.5
8V
6V
7V
VGE=15V
3.0
3.5
4.0
9V
AM08675v1
IC
6
4
2
0
0
4
V
GE(V)
8
(A)
2
6
10
8
10
12
12
14
16
V
CE=10V
AM08676v1
V
CE(sat)
2.5
2.0
1.5
1.0
0.5
1.5
I
C
(A)
(V)
1.0
2.0
3.0
T
J
=25°C
T
J
=125°C
T
J
=-50°C
3.5
3.0
2.5
V
GE
=15V
AM08677v1
V
CE(sat)
2.5
2.0
1.5
1.0
-50
50
T
J
(°C)
(V)
0
100
3.0
I
C
=1.5A
I
C
=0.75A
I
C
=3A
3.5
VGE=15V
AM08678v1
V
CES
-50
0
T
J
(°C)
(V)
50
100
600
640
680
720
IC=1mA
AM08679v1
2.1 Electrical characteristics (curves)
Figure 2. Output characteristics Figure 3. Output characteristic details
Figure 4. Transfer characteristics Figure 5. Collector-emitter on voltage vs
collector current
Figure 6. Collector-emitter on voltage vs
temperature
6/16 Doc ID 17690 Rev 3
Figure 7. Breakdown voltage vs temperature
Page 7
STGD3HF60HD Electrical characteristics
V
GE(th)
5.0
4.5
4.0
3.5
-50
0
T
J
(°C)
(V)
50
100
V
GE
=V
CE
IC=250µA
AM08830v1
V
GE
15
10
5
0
0
4
Q
g
(nC)
(V)
8
12
VCC=480V
I
C
=1.5A
AM08831v1
C
150
100
50
0
0
20
V
CE
(V)
(pF)
10
200
30
Cies
Coes
Cres
40
250
300
f=1MHz
V
GE
=0
AM08832v1
E
10
0.5
1.5
I
C
(A)
(µJ)
1.0
2.0
20
E
on
E
off
2.5
V
CE
=400V, RG=100Ω
V
GE
=15V, TJ=125°C
30
40
50
60
70
AM08889v1
E
30
0
400
R
G
(Ω)
(µJ)
200
600
35
E
on
E
off
800
V
CE
=400V, IC=1.5A
V
GE
=15V, TJ=125°C
40
45
50
55
60
AM08890v1
E
10
25
75
T
J
(°C)
(µJ)
50
100
E
on
E
off
VCE=400V, IC=1.5A
V
GE
=15V, RG=100Ω
15
20
25
30
35
AM08891v1
Figure 8. Gate threshold voltage vs
temperature
Figure 9. Gate charge vs gate-emitter
voltage
Figure 10. Capacitance variations Figure 11. Switching losses vs collector
current
Figure 12. Switching losses vs gate resistence Figure 13. Switching losses vs temperature
Doc ID 17690 Rev 3 7/16
Page 8
Electrical characteristics STGD3HF60HD
I
C
10
1
1
100
V
CE
(V)
10
(A)
0
V
GE
=15V
R
G
=100Ω
T
J
=25°C
T
J
=150°C
AM08836v1
(A)
2
0
0.5
1
V
0
1.5
4
6
2
T
C
=25°C
8
10
T
C
=125°C
2.5
12
14
FM
(V)
I
FM
3
3.5
16
18
20
22
24
TC=-50°C
AM04940v1
Figure 14. Turn-off SOA Figure 15. Diode forward on voltage
Figure 16. Thermal impedance
8/16 Doc ID 17690 Rev 3
Page 9
STGD3HF60HD Test circuits
AM01504v1
AM01505v1
AM01506v1
90%
10%
90%
10%
V
G
VCE
IC
Td(on)
Ton
Tr(Ion)
Td(off)
Toff
Tf
Tr(Voff)
Tcross
90%
10%
AM01507v1
IRRM
IF
di/dt
t
rr
ta
tb
Qrr
IRRM
t
V
F
dv/dt
3 Test circuits
Figure 17. Test circuit for inductive load
switching
Figure 18. Gate charge test circuit
Figure 19. Switching waveform Figure 20. Diode recovery time waveform
Doc ID 17690 Rev 3 9/16
Page 10
Package mechanical data STGD3HF60HD
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
10/16 Doc ID 17690 Rev 3
Page 11
STGD3HF60HD Package mechanical data
Table 9. DPAK (TO-252) mechanical data
mm
Dim.
Min. Typ. Max.
A 2.20 2.40
A1 0.90 1.10
A2 0.03 0.23
b 0.64 0.90
b4 5.20 5.40
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
D1 5.10
E 6.40 6.60
E1 4.70
e2.28
e1 4.40 4.60
H9.35 10.10
L1
L1 2.80
L2 0.80
L4 0.60 1
R0.20
V2 0° 8°
Doc ID 17690 Rev 3 11/16
Page 12
Package mechanical data STGD3HF60HD
Figure 21. DPAK (TO-252) drawing
0068772_G
12/16 Doc ID 17690 Rev 3
Page 13
STGD3HF60HD Packaging mechanical data
5 Packaging mechanical data
Table 10. DPAK (TO-252) tape and reel mechanical data
Tape Reel
Dim.
mm
Dim.
mm
Min. Max. Min. Max.
A0 6.8 7 A 330
B0 10.4 10.6 B 1.5
B1 12.1 C 12.8 13.2
D1.5 1.6D20.2
D1 1.5 G 16.4 18.4
E 1.65 1.85 N 50
F 7.4 7.6 T 22.4
K0 2.55 2.75
P0 3.9 4.1 Base qty. 2500
P1 7.9 8.1 Bulk qty. 2500
P2 1.9 2.1
R40
T 0.25 0.35
W 15.7 16.3
Figure 22. DPAK footprint
(a)
6.7
1.8
3
1.6
6.7
a. All dimension are in millimeters
2.3
2.3
1.6
AM08850v1
Doc ID 17690 Rev 3 13/16
Page 14
Packaging mechanical data STGD3HF60HD
P1
A0
D1
P0
F
W
E
D
B0
K0
T
User direction of feed
P2
10 pitches cumulative
tolerance on tape +/- 0.2 mm
User direction of feed
R
Bending radius
B1
For machine ref. only
including draft and
radii concentric around B0
AM08852v1
Top cover
tape
A
D
B
Full radius
G measured at hub
C
N
REEL DIMENSIONS
40mm min.
Access hole
At slot location
T
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
Figure 23. Tape for DPAK (TO-252)
14/16 Doc ID 17690 Rev 3
Figure 24. Reel for DPAK (TO-252)
Page 15
STGD3HF60HD Revision history
6 Revision history
Table 11. Document revision history
Date Revision Changes
29-Jun-2010 1 First release.
09-Sep-2010 2 Some values changed in Ta b le 2 .
22-Dec-2010 3 Document status promoted from preliminary data to datasheet.
Doc ID 17690 Rev 3 15/16
Page 16
STGD3HF60HD
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16/16 Doc ID 17690 Rev 3
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