break-before-make feature and 10 kV contact ESD protection
Features
■ Wide operating voltage range:
V
(opr) = 1.65 V to 4.8 V
CC
■ Low power dissipation:
I
= 0.2 µA (max.) at TA = 85 °C
CC
■ Low “ON” resistance V
–R
–R
–R
■ Separate supply voltage for switch and control
= 0.40 Ω (max. TA = 25 °C) at
ON
V
= 2.25 V
CC
= 0.35 Ω (max. TA = 25 °C) at
ON
V
= 3.0 V
CC
= 0.30 Ω (max. TA = 25 °C) at
ON
V
= 4.3 V
CC
pin
■ Latch-up performance exceeds 100 mA per
JESD 78, class II
■ ESD performance tested on common channel
(D pin)
– 10 kV IEC-61000-4-2 ESD, contact
discharge
– 15 kV IEC-61000-4-2 ESD, air discharge
■ ESD performance test on all other pins
– 10 kV IEC-61000-4-2 ESD, contact
discharge
– 500 V machine model (JESD22 A115-A)
– 1500 V charged-device model
(JESD22 C101)
= 0 V:
IN
STG4159
Flip-chip 7
Description
The STG4159 is a high-speed CMOS low voltage
single analog SPDT (single pole dual throw)
switch or 2:1 multiplexer/demultiplexer switch
fabricated in silicon gate C
designed to operate from 1.65 V to 4.8 V, making
this device ideal for portable applications. It offers
low ON-resistance (0.30 Ω) at V
SEL inputs are provided to control the switches.
The switch S1 is ON (connected to common port
D) when the SEL input is held high and OFF (high
impedance state exists between the two ports)
when SEL is held low; the switch S2 is ON (it is
connected to common port D) when the SEL input
is held low and OFF (high impedance state exist
between the two ports) when SEL is held high.
Additional key features are fast switching speed,
break-before-make delay time and ultra low power
consumption. All inputs and outputs are equipped
with protection circuits against static discharge,
giving them ESD immunity and transient excess
voltage.
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Table 4.Absolute maximum ratings
SymbolParameterValueUnit
V
CC
V
V
V
IC
V
O
I
IKC
I
IK
I
OK
I
O
I
OP
or I
I
CC
P
T
stg
T
1. Derate above 70 °C by 18.5 mW/C
Supply voltage-0.5 to 5.5V
Logic supply voltage-0.5 to 5.5V
L
DC input voltage-0.5 to VCC + 0.5V
I
DC control input voltage-0.5 to VL + 0.5V
DC output voltage-0.5 to VCC + 0.5V
DC input diode current on control pin (V
DC input diode current (V
< 0V)±50mA
SEL
SEL
DC output diode current±20mA
DC output current±300mA
DC output current peak (pulse at 1 ms, 10% duty cycle)±500mA
DC VCC or ground current±100mA
GND
Power dissipation at TA = 70°C
D
(1)
Storage temperature-65 to 150°C
Lead temperature (10 sec)260°C
L
Table 5.Recommended operating conditions
< 0V)-50mA
500mW
SymbolParameterValueUnit
V
CC
V
V
V
IC
V
O
T
op
dt/dvInput rise and fall time control input
1. VL pin should not be left floating.
Supply voltage1.65 to 4.8V
Logic supply voltage
L
Input voltage0 to V
I
(1)
1.65 to V
Control input voltage0 to V
Output voltage0 to V
Operating temperature-40 to 85°C
V
= 1.65 V to 2.7 V0 to 20
L
= 3.0 V to 4.8 V0 to 10
V
L
CC
CC
L
CC
Doc ID 12493 Rev 55/18
V
V
V
V
ns/V
Page 6
Electrical characteristicsSTG4159
3 Electrical characteristics
Table 6.DC specifications
Test conditionsValue
SymbolParameter
V
V
R
ΔR
High level input
IH
voltage
Low level input
IL
voltage
ON resistance
ON
ON resistance
match between
ON
channels
(1)
VCC
(V)
1.65 - 4.3
1.65 - 4.3
1.8
2.25
3
3.7
4.3
1.8
2.25
3−3−− −
3.7−3−−−
4.3−3−−−
1.8
VL
(V)
1.65 - 1.951.25
2.3 - 2.71.75
3.0 - 3.62.35−−2.35−
4.32.8−−2.8−
1.65 - 1.95
2.3 - 2.7
3.0 - 3.6
4.3
V
= 0 V to V
1.65 - 4.3
1.65 - 4.3
S
IS=100mA
V
= 0 V to V
S
IS=100 mA
CC
CC
TA = 25°C-40 to 85°C
Min. Typ. Max. Min. Max.
−−1.25−
−−1.75−
−−0.6−0.6
−−0.8−0.8
−−1.05−1.05
−−1.5−1.5
−0.49 0.65−0.85
−0.30 0.40−0.50
−0.25 0.35−0.45
−0.22 0.32−0.42
−0.21 0.30−0.40
−5−−−
−3−−−
−300400−450
Unit
V
V
Ω
mΩ
2.5
V
= 0 V to V
S
IS=100 mA
= 0.3 to 4.0
V
S
= 0.3 to 4.0
V
D
= 0.3 to 4.0
V
S
=Open
V
D
= Open
V
S
= 0.3 to 4.0
V
D
ON
I
D
ON resistance
flatness
Sn OFF state
leakage current
Sn ON state
leakage current
D ON state
leakage current
(2)
3
3.7
4.3
1.65 - 4.3 1.65 - 4.3
1.65 - 4.3 1.65 - 4.3
1.65 - 4.3 1.65 - 4.3
R
FLAT
I
OFF
I
6/18Doc ID 12493 Rev 5
1.65 - 4.3
−130170−230
CC
−90120−170
−90120−170
−90120−170
-30
-20
-20
−30-300300nA
−20-100100nA
−20-100100nA
mΩ
Page 7
STG4159Electrical characteristics
Table 6.DC specifications (continued)
Test conditionsValue
SymbolParameter
I
I
SEL
1. ΔRON = R
2. Flatness is defined as the difference between the maximum and minimum value of on-resistance as measured over the
specified analog signal ranges.
1. OFF-isolation = 20 log10 (VD/VS), VD = output, VS = input to off switch.
8/18Doc ID 12493 Rev 5
Page 9
STG4159Test circuits
V
4 Test circuits
Figure 4.ON-resistanceFigure 5.Bandwidth
Figure 6.OFF LeakageFigure 7.Channel to channel crosstalk
AM04072V1
AM04073V1
AM04074V1
Figure 8.OFF Isolation
Doc ID 12493 Rev 59/18
Page 10
Test circuitsSTG4159
Figure 9.Test circuit
Note:1CL = 5/35 pF or equivalent: (includes jig capacitance)
2R
3R
Figure 10. Break-before-make time delay
= 50 Ω or equivalent
L
= Z
T
of pulse generator (typically 50 Ω)
OUT
V
= 0 V, R
GEN
Figure 11. Switching time and charge injection
= 0 Ω, RL = 1 MΩ, CL = 100 pF
GEN
10/18Doc ID 12493 Rev 5
Page 11
STG4159Test circuits
Figure 12. Turn ON, turn OFF delay time
Doc ID 12493 Rev 511/18
Page 12
Package mechanical dataSTG4159
5 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
Figure 13. Flip-chip 7 mechanical data
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
Millimeters
Symbol
MinTypMax
A0.5850.650.715
A10.210.250.29
A2
b0.2650.3150.365
D1.0181.0681.118
D1
E2.0182.0682.118
E1
e0.450.50.55
f
−
−
−
−
0.4
0.5
1.5
0.284
−
−
−
−
ccc
−
0.08
−
Note:The terminal pin 1 on the bumps side is identified by a distinguishing feature (for instance by
a circular “clear area” - typically 0.1 mm diameter -) The terminal pin 1 on the backside of
the product is identified by a distinguishing feature (for instance by a circular “dot” - typically
0.5 mm diameter -)
12/18Doc ID 12493 Rev 5
Page 13
STG4159Package mechanical data
Figure 14. Package dimensions
Doc ID 12493 Rev 513/18
Page 14
Package mechanical dataSTG4159
Figure 15. Footprint recommendations
Figure 16. Marking
Dot, ST Logo
S1 = Marking
V = Manufacturing Location
yww = Datecode (y = year, ww = week)
Figure 17. Flip-chip 7 tape specification
14/18Doc ID 12493 Rev 5
Page 15
STG4159Package mechanical data
Figure 18. Flip-chip 7 reel information
Doc ID 12493 Rev 515/18
Page 16
Package mechanical dataSTG4159
Figure 19. Flip-chip 7 reel information
16/18Doc ID 12493 Rev 5
Page 17
STG4159Revision history
6 Revision history
Table 9.Revision history
DateRevisionChanges
05-May-20061First release
22-Nov-20062Schematic Figure 1 on page 3 updated
17-Apr-20073Typo in cover page description
06-May-20094Device summary table updated, watermark removed from all pages.
01-Oct-20095
Modified: Figure 2, Figure 3, Section 4: Test circuits and Figure 14.
Updated: T
values in Tab le 4 , removed footnote in Ta bl e 5 .
stg
Doc ID 12493 Rev 517/18
Page 18
STG4159
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