Page 1
®
SMALL S IGNAL PNP TRANSISTOR
Type Marking
STF2907A 03F
■ SILICON EPI TAX IA L PLANAR PN P
TRANSISTOR
■ MINIATURE SOT- 89 PLAS TIC PA CKA GE
FOR SURFACE MOUNTING CIRCUITS
■ TAPE & REEL PA C K ING
■ THE NPN COMP LE ME NT ARY TY PE IS
STF2222A
STF2907A
PRELIMINARY DATA
APPLICATIONS
■ WELL SUITABLE FOR PORT AB LE
SOT-89
EQUIPME NT
■ SMALL LOAD SW ITCH TR A NS IS TOR WITH
HIGH GAIN AND LOW SATURATION
VOLTAGE
INTERN AL SCH E MAT I C DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
T
Collector-Emitter Voltage (IE = 0) -60 V
CBO
Collector-Emitter Voltage (IB = 0) -60 V
CEO
Emitter-Base Voltage (IC = 0) -5 V
EBO
I
Collector Current -0.6 A
C
Collector Peak Current (tp < 5 ms) -0.8 A
CM
Total Dissipation at TC = 25 oC 1.2 W
tot
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
o
C
o
C
February 2003
1/4
Page 2
STF2907A
THERMAL DATA
R
• Device mounted on a PCB area of 1 cm
• Thermal Resistance Junction-Ambient Max 104.1
thj-amb
o
2
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEX
I
BEX
I
CBO
V
(BR)CEO
Collector Cut-off
Current (V
= -3 V)
BE
Base Cut-off Current
(V
= -3 V)
BE
Collector Cut-off
Current (I
= 0)
E
∗ Collector-Emitter
= -30 V -50 nA
V
CE
= -30 V -50 nA
V
CE
= -50 V -10 nA
V
CB
I
= -10 mA -60 V
C
Breakdown Voltage
(I
= 0)
B
V
(BR)CBO
Collector-Base
= -10 µA
I
C
-60 V
Breakdown Voltage
(I
= 0)
E
V
(BR)EBO
Emitter-Base
= -10 µA
I
E
-5 V
Breakdown Voltage
(I
= 0)
C
V
∗ Collector-Emitter
CE(sat)
Saturation Voltage
V
∗ Collector-Base
BE(sat)
Saturation Voltage
h
∗ DC Current Gain IC = -0.1 mA VCE = -10 V
FE
f
C
CBO
Transition Frequency IC = -50 mA VCE = -20V f = 100MHz 200 MHz
T
Collector-Base
IC = -150 mA IB = -15 mA
I
= -500 mA IB = -50 mA
C
IC = -150 mA IB = -15 mA
I
= -500 mA IB = -50 mA
C
-0.4
-1.6
-1.3
-2.6
75
I
= -1 mA VCE = -10 V
C
I
= -10 mA VCE = -10 V
C
I
= -150 mA VCE = -10 V
C
I
= -500 mA VCE = -10 V
C
100
100
100
50
300
IE = 0 VCB = -10 V f = 1 MHz 8 pF
Capacitance
C
EBO
Emitter-Base
IC = 0 VEB = -2 V f = 1 MHz 30 pF
Capacitance
t
t
t
t
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
Delay Time IC = -150 mA IB = -15 mA
d
t
Rise Time 40 ns
r
Switching On Time 45 ns
on
Storage Time IC = -150 mA IB1 = -IB2 = -15mA
s
t
Fall Time 30 ns
f
Switching Off Time 220 ns
off
V
V
= -30V
CC
= -30V
CC
190 ns
10 ns
V
V
V
V
2/4
Page 3
SOT-89 MECHANICAL DATA
STF2907A
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.4 1.6 55.1 63.0
B 0.44 0.56 17.3 22.0
B1 0.36 0.48 14.2 18.9
C 0.35 0.44 13.8 17.3
C1 0.35 0.44 13.8 17.3
D 4.4 4.6 173.2 181.1
D1 1.62 1.83 63.8 72.0
E 2.29 2.6 90.2 102.4
e 1.42 1.57 55.9 61.8
e1 2.92 3.07 115.0 120.9
H 3.94 4.25 155.1 167.3
L 0.89 1.2 35.0 47.2
mm mils
P025H
3/4
Page 4
STF2907A
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2003 STMicroelectro nics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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