Page 1
N-channel 650 V, 0.765 Ω, 11 A, TO-220FP
3
Features
R
Type V
DSS
STF10N65K3 650 V < 0.85 Ω 11 A 35 W
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Improved diode reverse recovery
characteristics
■ Zener-protected
DS(on)
max
I
D
Pw
STF11N65K3
SuperMESH3™ Power MOSFET
2
1
TO-220FP
Application
Switching applications
Description
These devices are made using the
SuperMESH3™ Power MOSFET technology that
is obtained via improvements applied to
STMicroelectronics’ SuperMESH™ technology
combined with a new optimized vertical structure.
The resulting product has an extremely low on
resistance, superior dynamic performance and
high avalanche capability, making it especially
suitable for the most demanding applications.
Table 1. Device summary
Order codes Marking Package Packaging
STF10N65K3 10N65K3 TO-220FP Tube
Figure 1. Internal schematic diagram
D(2)
G(1)
S(3)
AM01476v1
September 2010 Doc ID 17931 Rev 1 1/13
www.st.com
13
Page 2
Contents STF11N65K3
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13 Doc ID 17931 Rev 1
Page 3
STF11N65K3 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
I
DM
P
V
V
I
E
Drain source voltage (VGS=0) 650 V
DS
Gate-source voltage ± 30 V
GS
Drain current (continuous) at TC = 25 °C 11 A
I
D
I
Drain current (continuous) at TC = 100 °C 6.3 A
D
(1)
Drain current (pulsed) 40 A
Total dissipation at TC = 25 °C 35 W
TOT
Max current during repetitive or single pulse
AR
avalanche (pulse width limited by T
Single pulse avalanche energy
AS
Derating factor 0.28 W/°C
(3)
dv/dt
V
ESD(G-S)
V
T
1. Pulse width limited by safe operating area
2. Starting Tj = 25 °C, ID = IAR, VDD = 50 V
3. ISD ≤ 10 A, di/dt = 100 A/µs, V
Peak diode recovery voltage slope 12 V/ns
G-S ESD (HBM C=100 pF, R=1.5 kΩ) 2500 V
Insulation withstand voltage (RMS) from all three
ISO
leads to external heat sink (t=1 s;TC=25 °C)
T
Operating junction temperature
j
Storage temperature
stg
< V
Peak
(2)
(BR)DSS
JMAX
)
7.2 A
212 mJ
2500 V
-55 to 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
Rt
hj-amb
Thermal resistance junction-case max 3.57 °C/W
Thermal resistance junction-ambient max 62.5 °C/W
T
Maximum lead temperature for soldering purpose 300 °C
l
Doc ID 17931 Rev 1 3/13
Page 4
Electrical characteristics STF11N65K3
2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
GS
Gate-body leakage
current (V
DS
= 0)
= 0)
= 1 mA, VGS = 0 650 V
I
D
V
= Max rating
DS
= Max rating, TC=125 °C
V
DS
1
50µAµA
VGS = ± 20 V 10 µA
Gate threshold voltage VDS = VGS, ID = 100 µA 3 4.5 V
Static drain-source on
resistance
V
= 10 V, ID = 3.6 A 0.765 0.85 Ω
GS
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
C
C
C
oss eq.
Q
Q
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
Equivalent output
capacitance
R
Q
Intrinsic gate resistnce f=1 MHz open drain - 3 - Ω
G
Total gate charge
g
Gate-source charge
gs
Gate-drain charge
gd
= 50 V, f = 1 MHz,
V
DS
= 0
V
GS
= 0 to 520 V, VGS = 0 - 77 - pF
V
DS
= 520 V, ID = 7.2 A,
V
DD
= 10 V
V
GS
(see Figure 16)
1180
-
125
-
14
42
-
7.4
-
23
pF
pF
pF
nC
nC
nC
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max Unit
t
d(on)
t
d(off)
4/13 Doc ID 17931 Rev 1
Turn-on delay time
t
Rise time
r
Turn-off-delay time
t
Fall time
f
= 310 V, ID = 3.5 A,
V
DD
= 4.7 Ω, V
R
G
GS
(see Figure 15)
= 10 V
14.5
14
44
35
ns
ns
ns
ns
Page 5
STF11N65K3 Electrical characteristics
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
I
SDM
V
SD
Q
I
RRM
Q
I
RRM
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Source-drain current
SD
(1)
Source-drain current (pulsed)
(2)
Forward on voltage ISD = 7 A, VGS = 0 - 1.5 V
Reverse recovery time
t
rr
Reverse recovery charge
rr
Reverse recovery current
Reverse recovery time
t
rr
Reverse recovery charge
rr
Reverse recovery current
= 7 A, di/dt = 100A/µs
I
SD
VDD = 60 V (see Figure 20)
ISD = 7 A, di/dt = 100 A/µs
= 60 V, Tj = 150 °C
V
DD
(see Figure 20)
-
-
-
320
2
13
410
2.9
14
7.2
28.8AA
ns
µC
A
ns
µC
A
Table 8. Gate-source Zener diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
BV
Gate-source breakdown
GSO
voltage
Igs=± 1 mA (open drain) 30 - - V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Doc ID 17931 Rev 1 5/13
Page 6
Electrical characteristics STF11N65K3
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
I
D
AM03922v1
(A)
100
10
1
Operation in this area is
Limited by max R
DS(on)
Tj=150°C
Tc=25°C
10µs
100µs
1ms
10ms
Sinlge
0.1
0.1
1
10
pulse
100
V
DS
(V)
Figure 4. Output characteristics Figure 5. Transfer characteristics
I
D
(A)
18
16
14
VGS=10V
12
10
8
6
4
2
0
0
10
20
AM03923v1
7V
6V
5V
V
DS
(V)
I
(A)
12
11
10
D
V
DS
=25V
9
8
7
6
5
4
3
2
1
0
1
2
3
5
4
6
8
7
9
AM03924v1
V
GS
(V)
Figure 6. Normalized BV
BV
DSS
vs temperature Figure 7. Static drain-source on resistance
DSS
AM03925v1
(norm)
1.10
1.05
1.00
0.95
0.90
-75
-50
-25
25
50
75
100
125
0
150
T
J
(°C)
6/13 Doc ID 17931 Rev 1
R
DS(on)
(Ω)
0.95
0.90
0.85
0.80
0.75
0.70
0.65
0.60
AM03926v1
2
1
0
4
3
6
5
7
I
D
(A)
Page 7
STF11N65K3 Electrical characteristics
Figure 8. Output capacitance stored energy Figure 9. Capacitance variations
E
oss
AM03929v1
(µJ)
8
7
6
5
4
3
2
1
0
0
100
200
300
400
500
600
V
DS
(V)
Figure 10. Gate charge vs gate-source
V
(V)
GS
12
10
6
2
8
4
voltage
DS
V
VDD=520V
D
=7A
I
V
AM03927v1
GS
500
400
300
200
100
C
(pF)
1000
100
10
1
0.1
1
10
100
V
Figure 11. Normalized on resistance vs
temperature
R
DS(on)
(norm)
2.5
2.0
1.5
1.0
0.5
AM03928v1
Ciss
Coss
Crss
DS
(V)
AM03931v1
0
0
10
20
30
40
50
Figure 12. Normalized gate threshold voltage
V
(norm)
vs temperature
GS(th)
1.10
1.00
0.90
0.80
0.70
-50
-25
25
50
75
100
125 150
0
0
Q
g
(nC)
0.0
-50
-25
25
0
50
75
100
125
150
T
J
(°C)
Figure 13. Maximum avalanche energy vs
temperature
AM03930v1
E
AS
(mJ)
220
ID=7.2 A
V
DD
=50 V
200
180
160
140
120
100
80
60
40
20
0
T
J
(°C)
0
20
40
60
80
100
Doc ID 17931 Rev 1 7/13
120
AM03933v1
T
140
J
(°C)
Page 8
Electrical characteristics STF11N65K3
Figure 14. Source-drain diode forward
characteristics
V
SD
(V)
0.9
AM03932v1
TJ=-50°C
0.8
0.7
0.6
0.5
0.4
0.3
TJ=25°C
T
J
=150°C
0
1
3
2
5
4
6
7
I
SD
(A)
8
8/13 Doc ID 17931 Rev 1
Page 9
STF11N65K3 Test circuits
3 Test circuits
Figure 15. Switching times test circuit for
PW
resistive load
VD
VGS
RG
RL
D.U.T.
2200
µF
3.3
µF
AM01468v1
V
DD
Figure 17. Test circuit for inductive load
G
25
Ω
switching and diode recovery times
A
D
D.U. T.
S
B
R
FAST
DIODE
G
A
A
L=100µH
B
B
D
G
S
3.3
µF
1000
µF
V
DD
Figure 16. Gate charge test circuit
V
i=20V=VGMAX
PW
2200
µF
1kΩ
12V
IG=CONST
2.7kΩ
47kΩ
47kΩ
100Ω
100nF
D.U.T.
AM01469v1
Figure 18. Unclamped inductive load test
circuit
L
VD
ID
Vi
D.U. T.
2200
µF
3.3
µF
1kΩ
VDD
V
VDD
G
Pw
AM01470v1
Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform
V(BR)DSS
VD
IDM
ID
VDD
0
VDD
AM01472v1
0
Doc ID 17931 Rev 1 9/13
10%
tdon
ton
90%
tr
10%
V
GS
VDS
90%
tdoff
AM01471v1
toff
tf
90%
10%
AM01473v1
Page 10
Package mechanical data STF11N65K3
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
10/13 Doc ID 17931 Rev 1
Page 11
STF11N65K3 Package mechanical data
Table 9. TO-220FP mechanical data
mm
Dim.
Min. Typ. Max.
A4.4 4.6
B2.5 2.7
D 2.5 2.75
E0.45 0.7
F0.75 1
F1 1.15 1.70
F2 1.15 1.70
G4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2
Figure 21. TO-220FP drawing
L7
E
A
B
Dia
L6
H
D
L5
F2
F1
F
G
G1
L2
L3
L4
7012510_Rev_K
Doc ID 17931 Rev 1 11/13
Page 12
Revision history STF11N65K3
5 Revision history
Table 10. Document revision history
Date Revision Changes
10-Sep-2010 1 First release
12/13 Doc ID 17931 Rev 1
Page 13
STF11N65K3
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Doc ID 17931 Rev 1 13/13
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