Datasheet std95n4f3_stp95n4f3 Datasheet

N-channel 40 V, 5.0 mΩ, 80 A, DPAK, TO-220

Features

R

Type V

STD95N4F3 40 V < 5.8 m Ω 80 A 110 W

STP95N4F3 40 V < 6.2 mΩ 80 A 110 W

■ Standard threshold drive

■ 100% avalanche tested

DSS

DS(on)

max

Applications

■ Switching applications

– Automotive

I

D

Pw

STD95N4F3

STP95N4F3

STripFET™ III Power MOSFET

3

1

DPAK

TO-220

3

2

1

Description

This STripFET™ III Power MOSFET technology is
among the latest improvements, which have been
especially tailored to minimize on-state resistance
providing superior switching performance.

Table 1. Device summary

Order codes Marking Package Packaging

STD95N4F3 95N4F3 DPAK Tape and reel

STP95N4F3 95N4F3 TO-220 Tube

Figure 1. Internal schematic diagram

September 2009 Doc ID 13288 Rev 3 1/14

www.st.com

14

Contents STD95N4F3, STP95N4F3

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

2/14 Doc ID 13288 Rev 3

STD95N4F3, STP95N4F3 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

I

V

V

I

D

DM

P

I

TOT

Drain-source voltage (VGS=0) 40 V

DS

Gate-source voltage ± 20 V

GS

(1)

Drain current (continuous) at TC = 25 °C 80 A

Drain current (continuous) at TC = 100 °C 65 A

D

(2)

Drain current (pulsed) 320 A

Total dissipation at TC = 25 °C 110 W

Derating factor 0.73 W/°C

(3)

dv/dt

E

AS

T

T

1. Current limited by package

2. Pulse width limited by safe operating area

3. ISD ≤ 80 A, di/dt ≤ 400A/µs, VDS ≤ V

4. Starting Tj = 25 °C, ID = 40 A, VDD = 30 V

Peak diode recovery voltage slope 8 V/ns

(4)

Single pulse avalanche energy 400 mJ

Operating junction temperature

j

Storage temperature

stg

Table 3. Thermal resistance

Symbol Parameter

(BR)DSS

-55 to 175 °C

, Tj ≤ Tjmax

Value

Unit

TO-220 DPAK

R

thj-case

R

thj-a

R

thj-pcb

T

1. When mounted on 1inch² FR-4 2Oz Cu board

Thermal resistance junction-case max 1.36 °C/W

Thermal resistance junction-ambient max 62.5 °C/W

(1)

Thermal resistance junction-ambient max 50 °C/W

Maximum lead temperature for soldering purpose 300 °C

l

Doc ID 13288 Rev 3 3/14

Electrical characteristics STD95N4F3, STP95N4F3

2 Electrical characteristics

(T

=25 °C unless otherwise specified)

CASE

Table 4. Static

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source breakdown
voltage

Zero gate voltage drain
current (VGS = 0)

Gate body leakage current

= 0)

(V

DS

= 250 µA, VGS= 0 40 V

I

D

= Max rating,

V

DS

= Max rating,Tc = 125 °C

V

DS

V

= ±20 V ±200 nA

GS

10

100µAµA

Gate threshold voltage VDS= VGS, ID = 250 µA 2 4 V

= 10 V, ID= 40 A for DPAK 5.0 5.8 mΩ

V

Static drain-source on
resistance

GS

= 10 V, ID= 40 A for TO-220 5.4 6.2 mΩ

V

GS

Table 5. Dynamic

Symbol Parameter Test conditions Min Typ. Max. Unit

(1)

g

fs

C

C

C

Q

Q

Q

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward transconductance V

Input capacitance

iss

Output capacitance

oss

Reverse transfer capacitance

rss

Total gate charge

g

Gate-source charge

gs

Gate-drain charge

gd

= 25 V, ID=40 A - 100 S

DS

2200

V

=25 V, f=1 MHz, VGS=0 -

DS

580

40

=20 V, ID = 80 A

V

DD

=10 V

V

GS

Figure 14

40

-

11

8

54 nC

pF
pF
pF

nC
nC

4/14 Doc ID 13288 Rev 3

STD95N4F3, STP95N4F3 Electrical characteristics

Table 6. Switching on/off (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

t

d(on)

t

t

d(off)

t

Turn-on delay time
Rise time

r

Turn-off delay time
Fall time

f

VDD=20 V, ID= 40 A,

=4.7 Ω, VGS=10 V

R

G

Figure 16

VDD=20 V, ID= 40 A,
RG=4.7 Ω, VGS=10 V

Figure 16

15

­50

40

­15

-

-

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

I

SDM

V

SD

Q

I

RRM

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Source-drain current

SD

(1)

Source-drain current (pulsed)

(2)

Forward on voltage ISD=80 A, VGS=0 - 1.5 V

=80 A,

I

t

Reverse recovery time

rr

Reverse recovery charge

rr

Reverse recovery current

SD

di/dt = 100 A/µs,

= 30 V, Tj=150 °C

V

DD

Figure 15

-

45

-

60

2.8

80

320AA

ns
ns

ns
ns

ns
nC

A

Doc ID 13288 Rev 3 5/14

Electrical characteristics STD95N4F3, STP95N4F3

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance

Figure 4. Output characteristics Figure 5. Transfer characteristics

Figure 6. Static drain-source on resistance Figure 7. Normalized BVDSS vs temperature

R

DS(on)

HV29000

(mΩ)

6.5
ID=40A

GS

V

=10V

6.0

5.5
TO-220

60

DPAK

80

I

D

(A)

5.0

4.5
20

0

40

6/14 Doc ID 13288 Rev 3

STD95N4F3, STP95N4F3 Electrical characteristics

Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations

Figure 10. Normalized gate threshold voltage

vs temperature

Figure 12. Source-drain diode forward

characteristics

Figure 11. Normalized on resistance vs

temperature

Doc ID 13288 Rev 3 7/14

Test circuits STD95N4F3, STP95N4F3

3 Test circuits

Figure 13. Switching times test circuit for

PW

resistive load

VGS

VD

RG

RL

D.U.T.

2200

µF

3.3
µF

AM01468v1

V

DD

Figure 15. Test circuit for inductive load

G

25

Ω

switching and diode recovery times

A

D

D.U. T.

S

B

R

FAST
DIODE

G

A

A

L=100µH

B

B

D

G

S

3.3

µF

1000

µF

V

DD

Figure 14. Gate charge test circuit

V

i=20V=VGMAX

PW

2200
µF

1kΩ

12V

IG=CONST

2.7kΩ

47kΩ

47kΩ

100Ω

100nF

D.U.T.

AM01469v1

Figure 16. Unclamped inductive load test

circuit

L

VD

ID

Vi

D.U. T.

2200

µF

3.3
µF

1kΩ

VDD

V

VDD

G

Pw

AM01470v1

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

V(BR)DSS

VD

IDM

ID

VDD

VDD

AM01472v1

0

0

10%

tdon

ton

90%

toff

tr

10%

tdoff

VDS

90%

V

GS

8/14 Doc ID 13288 Rev 3

AM01471v1

tf

90%

10%

AM01473v1

STD95N4F3, STP95N4F3 Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.

®

packages, depending on their level of environmental compliance. ECOPACK®

Doc ID 13288 Rev 3 9/14

Package mechanical data STD95N4F3, STP95N4F3

TO-220 mechanical data

Dim

Min Typ Max Min Typ Max

mm inch

A 4.40 4.60 0.173 0.181

b 0.61 0.88 0.024 0.034

b1 1.14 1.70 0.044 0.066

c0.48 0.70 0.019 0.027

D 15.25 15.75 0.6 0.62

D1 1.27 0.050

E 10 10.40 0.393 0.409

e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

F1.23 1.32 0.048 0.051

H1 6.20 6.60 0.244 0.256

J1 2.40 2.72 0.094 0.107

L13 14 0.511 0.551

L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L3028.90 1.137
∅P 3.75 3.85 0.147 0.151

Q2.65 2.95 0.104 0.116

10/14 Doc ID 13288 Rev 3

STD95N4F3, STP95N4F3 Package mechanical data

TO-252 (DPAK) mechanical data

DIM.

A 2.20 2.40

A1 0.901.10

A2 0.03 0.23

b 0.64 0.90

b4 5.20 5.40

c 0.45 0.60

c2 0.48 0.60

D 6.00 6.20

D1 5.10

E 6.40 6.60

E1 4.70

e2.28

e1 4.40 4.60

H 9.35 10.10

L1

L1 2.80

L2 0.80

L4 0.60 1

R0.20

V2 0

min. typ max.

o

mm.

o

8

0068772_G

Doc ID 13288 Rev 3 11/14

Packaging mechanical data STD95N4F3, STP95N4F3

TAPE AND REEL SHIPMENT

DPAK FOOTPRINT

DIM.

mm inch

MIN. MAX. MIN. MAX.

A 330 12.992

B 1.5 0.059

C 12.8 13.2 0.504 0.520

D 20.2 0.795

G 16.4 18.4 0.645 0.724

N 50 1.968

T 22.4 0.881

BASE QTY BULK QTY

2500 2500

REEL MECHANICAL DATA

DIM.

mm inch

MIN. MAX. MIN. MAX.

A0 6.8 7 0.267 0.275

B0 10.4 10.6 0.409 0.417

B1 12.1 0.476

D 1.5 1.6 0.059 0.063

D1 1.5 0.059

E 1.65 1.85 0.065 0.073

F 7.4 7.6 0.291 0.299

K0 2.55 2.75 0.100 0.108

P0 3.9 4.1 0.153 0.161

P1 7.9 8.1 0.311 0.319

P2 1.9 2.1 0.075 0.082

R 40 1.574

W 15.7 16.3 0.618 0.641

TAPE MECHANICAL DATA

All dimensions are in millimeters

5 Packaging mechanical data

12/14 Doc ID 13288 Rev 3

STD95N4F3, STP95N4F3 Revision history

6 Revision history

Table 8. Dcument revision history

Date Revision Changes

22-Feb-2007 1 First release

15-May-2007 2 Changes on applications

10-Sep-2009 3 Removed package, mechanical data: IPAK

Doc ID 13288 Rev 3 13/14

STD95N4F3, STP95N4F3

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14/14 Doc ID 13288 Rev 3