Datasheet std90n03l_std90n03l-1 Datasheet

Page 1
3
General features
STD90N03L
STD90N03L-1
N-channel 30V - 0.005Ω - 80A - DPAK/IPAK
STr ipFET™ III Power MOSFET
Type V
STD90N03L
STD90N03L-1
1. Pulse width limited by safe operating area
■ R
DS(on)*Qg
■ Switching losses reduced
■ Low threshold device
industry’s benchmark
DSS
30V 30V
R
DS(on)
0.0057Ω
0.0057Ω
I
80A 80A
D
(1) (1)
Description
This device utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved.
Applications
■ Switching applications
2
1
IPAK
DPAK
Internal schematic diagram
3
1
Order codes
Part number Marking Package Packaging
STD90N03L D90N03L DPAK Tape & reel
STD90N03L-1 D90N03L-1 IPAK Tube
October 2006 Rev1 1/16
www.st.com
16
Page 2
Content STD90N03L - STD90N03L-1
Content
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
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Page 3
STD90N03L - STD90N03L-1 Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
I
DM
P
V V I
D
I
TOT
DS GS
(1)
D
Drain-source voltage (VGS = 0) 30 V Gate-source voltage ±20 V Drain current (continuous) at TC = 25°C 80 A Drain current (continuous) at TC=100°C 64 A
(2)
Drain current (pulsed) 320 A Total dissipation at TC = 25°C 95 W Derating factor 0.63 W/°C
(3)
E
AS
T
T
stg
1. Value limited by wire bonding
2. Pulse width limited by safe operating area
3. Starting Tj = 25°C, ID =40A, VDD =15V
Single pulse avalanche energy 350 mJ Operating junction temperature
J
Storage temperature
-55 to 175 °C
Table 2. Thermal data
Symbol Parameter Value Unit
R
thj-case
R
thj-amb
T
Thermal resistance junction-case max 1.58 °C/W Thermal resistance junction-ambient max 100 °C/W Maximum lead temperature for soldering
j
purpose
275 °C
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Page 4
Electrical characteristics STD90N03L - STD90N03L-1

2 Electrical characteristics

(T
=25°C unless otherwise specified)
CASE
Table 3. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source breakdown voltage
Zero gate voltage drain current (VGS = 0)
Gate body leakage current
= 0)
(V
DS
Gate threshold voltage Static drain-source on
resistance
= 250µA, VGS= 0
I
D
V
= 30V
DS
V
= 30V, Tc=125°C
DS
= ±20V
V
GS
= VGS, ID = 250µA
V
DS
= 10V, ID= 40A
V
GS
= 5V, ID= 40A
V
GS
30 V
1
10
±100 nA
1V
0.005
0.007
0.0057
0.0011
Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
C
C
Q
Q
Q
R
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
g
Total gate charge Gate-source charge
gs
Gate-drain charge
gd
Gate input resistance
G
=25V, f=1MHz,
V
DS
V
=0
GS
=15V, ID = 80A
V
DD
=5V
V
GS
(see Figure 13)
f=1MHz Gate Bias Bias=0 Test Signal Level=20mV
open drain
2805
549
76
22
32 nC
10
7
1.2 Ω
µA µA
Ω Ω
pF pF pF
nC nC
Table 5. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
d(off)
4/16
Turn-on delay time
t
Rise time
r
Turn-off delay time
t
Fall time
f
V
=15V, ID=40A,
DD
=4.7Ω, VGS=5V
R
G
(see Figure 12)
VDD=15V, ID=40A,
=4.7Ω, VGS=5V
R
G
(see Figure 12)
19
135
24 33
ns ns
ns ns
Page 5
STD90N03L - STD90N03L-1 Electrical characteristics
Table 6. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
SD
t
Source-drain current Source-drain current
(1)
(pulsed)
(2)
Forward on voltage
rr
Reverse reco very time Reverse recovery charge
rr
Reverse recovery current
I
SD
I
SD
V
(see Figure 15)
I
I
SDM
V
SD
Q
I
RRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
=40A, VGS=0 =80A, di/dt = 100A/µs,
=19 V, Tj= 150°C
DD
36 32
1.8
80
320AA
1.3 V ns
µC
A
5/16
Page 6
Electrical characteristics STD90N03L - STD90N03L-1

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characteristics Figure 4. Transfer characteristics
Figure 5. Static drain-source on resistance Figure 6. Normalized B
6/16
vs temperature
VDSS
Page 7
STD90N03L - STD90N03L-1 Electrical characteristics
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalize d gate threshold voltage
vs temperature
Figure 11. Source-d rain diode forward
characteristics
Figure 10. Normlaized on resistance vs
temperature
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Page 8
Test circuit STD90N03L - STD90N03L-1

3 Test circuit

Figure 12. Switching times test circuit for
resistive load
Figure 14. Test circuit for inductive load
switching and diode recovery times
Figure 13. Gate c harge test circuit
Figure 15. Unclamped Inductive load test
circuit
8/16
Page 9
STD90N03L - STD90N03L-1

Appendix A

Figure 16. Buck Converter: Power Losses Estimation
The power losses associated with the FETs in a Synchronous Buck converter can be estimated using the equations shown in the table below. The formulas give a good approximation, for the sake of performance comparison, of how different pairs of devices affect the converter efficiency. However a very important parameter, the working temperature, is not considered. The real device behavior is really dependent on how the heat generated inside the devices is removed to allow for a safer working junction temperature.
The low side (SW2) device requires:
■ Very low R
■ Small Qgls to reduce the gate charge losses
■ Small Coss to reduce losses due to output capacitance
■ Small Qrr to reduce losses on SW1 during its turn-on
■ The Cgd/Cgs ratio lower than Vth/Vgg ratio especially with low drain to source
■ voltage to avoid the cross conduction phenomenon;
to reduce conduction losses
DS(on)
The high side (SW1) device requires:
■ Small Rg and Ls to allow higher gate current peak and to limit the voltage feedb ack on the
gate
■ Small Qg to have a faster commutation and to reduce gate charge losses
■ Low R
to reduce the conduction losses.
DS(on)
9/16
Page 10
Table 7. Power losses calculation
High Side Switching (SW1) Low Side Switch (SW2)
STD90N03L - STD90N03L-1
P
conduction
P
P
diode
P
1. Dissipated by SW1 during turn-on
switching
Recovery
(1)
Conduction Not applicable
gate(QG)
P
Qoss
Table 8. Paramiters meaning
2 LDS(on)SW1
+
gd(SW1)gsth(SW1)in
Not applicable
ggg(SW1)
oss(SW1)in
2
δ
*I *R
I
L
*f*)Q(Q*V
I
g
Zero voltage switching
f*V*Q
f*Q*V
2 LDS(on)SW2
rr(SW2)in
deadtimeLf(SW2)
gggls(SW2)
oss(SW2)in
)1(*I *R
δ
−
f*Q*V
f*t*I*V
f*V*Q
f*Q*V
2
Parameter Meaning
d Duty-cycle
Q
gsth
Q
gls
P
conduction
P
switching
P
diode
P
gate
P
Qoss
Post threshold gate charge Third quadrant gate charge On state losses On-off transition losses Conduction and reverse recovery diode losses Gate drive losses Output capacitance losses
10/16
Page 11
STD90N03L - STD90N03L-1 Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related t o soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data STD90N03L - STD90N03L-1
TO-251 (IPAK) MECHANICAL DAT A
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 0.033 B5 0.3 0.012 B6 0.95 0.037
C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039
H
C
A
C2
D
E
= =
L2
B2
= =
12/16
A1
L
B3
B6
B
2
1 3
L1
B5
A3
G
= =
0068771-E
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STD90N03L - STD90N03L-1 Package mechanical data
DPAK MECHANICAL DATA
DIM.
A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009
B 0.64 0.9 0.025 0.035 b4 5.2 5.4 0.204 0.212
C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244 D1 5.1 0.200
E 6.4 6.6 0.252 0.260 E1 4.7 0.185
e 2.28 0.090 e1 4.4 4.6 0.173 0.181
H 9.35 10.1 0.368 0.397
L 1 0.039
(L1) 2.8 0.110
L2 0.8 0.031 L4 0.6 1 0.023 0.039
R 0.2 0.008 V2 0° 8° 0° 8°
MIN. TY P MA X. MIN. TYP. MAX.
mm. inch
0068772-F
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Packaging mechanical data STD90N03L - STD90N03L-1

5 Packaging mechanical data

DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22.4 0.881
mm inch
MIN. MAX. MIN. MAX.
TAPE MECHANICAL DATA
DIM.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D 1.5 1.6 0.059 0.063
D1 1.5 0.059
E 1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R 40 1.574
W 15.7 16.3 0.618 0.641
mm inch
MIN. MAX. MIN. MAX.
14/16
BASE QTY BULK QTY
2500 2500
Page 15
STD90N03L - STD90N03L-1 Revision history

6 Revision history

Table 9. Revision history
Date Revision Changes
20-Oct-2006 1 Initial release.
15/16
Page 16
Revision history STD90N03L - STD90N03L-1
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