This device utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology.
This is suitable for the most demanding DC-DC
converter application where high efficiency is to
be achieved.
Figure 5.Static drain-source on resistanceFigure 6.Normalized B
6/16
vs temperature
VDSS
Page 7
STD90N03L - STD90N03L-1Electrical characteristics
Figure 7.Gate charge vs gate-source voltage Figure 8.Capacitance variations
Figure 9.Normalize d gate threshold voltage
vs temperature
Figure 11. Source-d rain diode forward
characteristics
Figure 10. Normlaized on resistance vs
temperature
7/16
Page 8
Test circuitSTD90N03L - STD90N03L-1
3 Test circuit
Figure 12. Switching times test circuit for
resistive load
Figure 14. Test circuit for inductive load
switching and diode recovery times
Figure 13. Gate c harge test circuit
Figure 15. Unclamped Inductive load test
circuit
8/16
Page 9
STD90N03L - STD90N03L-1
Appendix A
Figure 16. Buck Converter: Power Losses Estimation
The power losses associated with the FETs in a Synchronous Buck converter can be
estimated using the equations shown in the table below. The formulas give a good
approximation, for the sake of performance comparison, of how different pairs of devices
affect the converter efficiency. However a very important parameter, the working
temperature, is not considered. The real device behavior is really dependent on how the
heat generated inside the devices is removed to allow for a safer working junction
temperature.
The low side (SW2) device requires:
■ Very low R
■ Small Qgls to reduce the gate charge losses
■ Small Coss to reduce losses due to output capacitance
■ Small Qrr to reduce losses on SW1 during its turn-on
■ The Cgd/Cgs ratio lower than Vth/Vgg ratio especially with low drain to source
■ voltage to avoid the cross conduction phenomenon;
to reduce conduction losses
DS(on)
The high side (SW1) device requires:
■ Small Rg and Ls to allow higher gate current peak and to limit the voltage feedb ack on the
gate
■ Small Qg to have a faster commutation and to reduce gate charge losses
■ Low R
to reduce the conduction losses.
DS(on)
9/16
Page 10
Table 7.Power losses calculation
High Side Switching (SW1)Low Side Switch (SW2)
STD90N03L - STD90N03L-1
P
conduction
P
P
diode
P
1. Dissipated by SW1 during turn-on
switching
Recovery
(1)
ConductionNot applicable
gate(QG)
P
Qoss
Table 8.Paramiters meaning
2
LDS(on)SW1
+
gd(SW1)gsth(SW1)in
Not applicable
ggg(SW1)
oss(SW1)in
2
δ
*I *R
I
L
*f*)Q(Q*V
I
g
Zero voltage switching
f*V*Q
f*Q*V
2
LDS(on)SW2
rr(SW2)in
deadtimeLf(SW2)
gggls(SW2)
oss(SW2)in
)1(*I *R
δ
−
f*Q*V
f*t*I*V
f*V*Q
f*Q*V
2
ParameterMeaning
dDuty-cycle
Q
gsth
Q
gls
P
conduction
P
switching
P
diode
P
gate
P
Qoss
Post threshold gate charge
Third quadrant gate charge
On state losses
On-off transition losses
Conduction and reverse recovery diode losses
Gate drive losses
Output capacitance losses
10/16
Page 11
STD90N03L - STD90N03L-1Package mechanical data
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
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ECOPACK specifications are available at: www.st.com
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