Page 1
Features
STD840DN40
Dual NPN high voltage transistors in a single package
Preliminary data
■ Low V
■
CE(sat)
Simplified circuit design
■ Reduced component count
■ Fast switching speed
Applications
■ Compact fluorescent lamp (CFL) 220 V mains
■ Electronic ballast for fluorescent lighting
Description
The device is a dual NPN high voltage power
transistors manufactured in multi-epitaxial planar
technology. It is housed in dual island DIP-8
package with separated terminals for high
assembly flexibility.
8
4
1
DIP-8
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code Marking Package Packaging
STD840DN40 D840DN40 DIP-8 Tube
April 2010 Doc ID 16796 Rev 2 1/9
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
www.st.com
9
Page 2
Electrical ratings STD840DN40
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
V
V
I
I
P
T
Collector-base voltage (IE = 0) 700 V
CBO
Collector-emitter voltage (IB = 0) 400 V
CEO
Emitter-base voltage (IC = 0, IB = 1.5 A, tp < 10 ms) V
EBO
Collector current 4 A
I
C
Collector peak current (tP < 5 ms) 8 A
CM
I
Base current 1.5 A
B
Base peak current (tP < 5 ms) 3 A
BM
Total dissipation at T
TOT
Total dissipation at T
Storage temperature -65 to 150 °C
STG
T
Max. operating junction temperature 150 °C
J
= 25 °C single transistor 3 W
amb
= 25 °C both transistors 2.2 W
amb
(BR)EBO
Table 3. Thermal data
Symbol Parameter Value Unit
Thermal resistance junction-ambient (Single transistor) 42 °C/W
(1)
R
thJA
1. Device mounted on PCB area of 25 mm².
Thermal resistance junction-ambient (Both transistors) 57 °C/W
V
2/9 Doc ID 16796 Rev 2
Page 3
STD840DN40 Electrical characteristics
2 Electrical characteristics
T
= 25 °C unless otherwise specified.
case
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
= 700 V
I
CES
I
CEO
Collector cut-off
current (V
BE
= 0)
Collector cut-off
current (IB = 0)
V
CE
V
= 700 V Tc = 125 °C
CE
= 400 V 250 µA
V
CE
Emitter-base
V
(BR)EBO
breakdown voltage
= 0)
(I
C
= 10 mA 9 18 V
I
E
Collector-emitter
(1)
V
CEO(sus)
V
CE(sat)
V
BE(sat)
h
FE
V
sustaining voltage
= 0)
(I
B
Collector-emitter
(1)
saturation voltage
Base-emitter
(1)
saturation voltage
(1)
DC current gain
Diode forward voltage IF = 1 A 2.5 V
F
= 10 mA 400 V
I
C
= 1 A IB = 0.2 A
I
C
= 2 A IB = 0.4 A
I
C
= 1 A IB = 0.2 A
I
C
= 2 A IB = 0.4 A
I
C
I
= 10 mA V
C
= 2 A V
I
C
Resistive load
t
s
t
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %.
f
Storage time
Fall time
IC = 1 A I
= 125 V tp = 20 µs
V
CC
B1
= - I
CE
CE
B2
= 5 V
= 5 V
= 0.2 A
100
500µAµA
0.51V
V
1.2
1.3VV
10
824
2.5
0.2
µs
µs
Doc ID 16796 Rev 2 3/9
Page 4
Electrical characteristics STD840DN40
2.1 Electrical characteristics (curves)
Figure 2. DC current gain (V
Figure 4. Collector-emitter saturation voltage Figure 5. Base-emitter saturation voltage
= 1 V) Figure 3. DC current gain (VCE = 5 V)
CE
Figure 6. Freewheel diode forward voltage Figure 7. Resistive load switching time
4/9 Doc ID 16796 Rev 2
Page 5
STD840DN40 Test circuit
3 Test circuit
Figure 8. Resistive load switching test circuit
1. Fast electronic switch
2. Non-inductive resistor
Doc ID 16796 Rev 2 5/9
Page 6
Package mechanical data STD840DN40
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
Table 5. DIP-8 mechanical data
mm.
Dim.
Min. Typ. Max.
A 4.80
A1 0.50
A2 3.10 3.50
A3 1.40 1.60
b 0.38 0.55
b1 0.38 0.51
b2 1.47 1.57
b3 0.89 1.09
c 0.21 0.35
c1 0.20 0.30
D 9.10 9.30
D1 0.13
E 7.62 8.25
E1 6.25 6.45
e2.54
eA 7.62
eB 7.62 10.90
eC 0 1.52
L 2.92 3.81
6/9 Doc ID 16796 Rev 2
Page 7
STD840DN40 Package mechanical data
Figure 9. Drawing dimension DIP-8
8145726_A
Doc ID 16796 Rev 2 7/9
Page 8
Revision history STD840DN40
5 Revision history
Table 6. Document revision history
Date Revision Changes
18-Nov-2009 1 Initial release.
16-Apr-2010 2 Inserted P
TOT
and R
values Ta bl e 2 and Table 3 on page 2.
thJA
8/9 Doc ID 16796 Rev 2
Page 9
STD840DN40
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Doc ID 16796 Rev 2 9/9
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