Page 1
Features
STD70NS04ZL
N-channel clamped 9.5 mΩ, 70 A DPAK
fully protected SAFeFET™ Power MOSFET
Type V
STD70NS04ZL Clamped < 10.5 mΩ 70 A
■ Low capacitance and gate charge
■ 100% avalanche tested
■ 175 °C maximum junction temperature
DSS
R
DS(on)
max
I
D
Applications
■ Switching applications
– ABS, solenoid drivers
– Motor control
–DC-DC converters
Description
This fully clamped Power MOSFET is produced
by using the latest advanced company’s Mesh
OVERLAY process which is based on a novel
strip layout. The inherent benefits of the new
technology coupled with the extra clamping
capabilities make this product particularly suitable
for the harshest operation conditions such as
those encountered in the automotive
environment. Any other application requiring extra
ruggedness is also recommended.
3
1
DPAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes Marking Package Packaging
STD70NS04ZL 70NS04ZL DPAK Tape and reel
October 2009 Doc ID 16344 Rev 1 1/13
www.st.com
13
Page 2
Contents STD70NS04ZL
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13 Doc ID 16344 Rev 1
Page 3
STD70NS04ZL Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
Drain-source voltage (VGS = 0) 33
drain-gate voltage 33
Gate-source voltage ±20
Drain current (continuous) at TC = 25 °C 70 A
Drain current (continuous) at TC=100 °C 50 A
Drain gate current (continuous) ± 50 mA
Gate-source current (continuous) ± 50 mA
(2)
Drain current (pulsed) 280 A
Total dissipation at TC = 25 °C 110 W
I
DM
P
V
V
V
I
I
DS
DG
GS
I
D
I
D
DG
GS
TOT
Derating factor 0.73 W/°C
V
ESD(G-S)
V
ESD(G-D)
V
ESD(D-S)
T
T
stg
1. Voltage is limited by zener diodes
2. Pulse width limited by safe operating area
Gate-source ESD (HBM-C=100 pF, R=1.5 kΩ)± 8 kV
Gate-drain ESD (HBM-C=100 pF, R=1.5 kΩ)± 8kV
Drain-source ESD (HBM-C=100 pF, R=1.5 kΩ)± 8 kV
Operating junction temperature
J
Storage temperature
(1)
(1)
(1)
V
V
V
-55 to 175 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
R
thj-pcb
1. When mounted on 1 inch² 2 oz. FR4 Cu.
Table 4. Avalanche data
Thermal resistance junction-case max 1.36 °C/W
(1)
Thermal resistance junction-pcb max 50 °C/W
Symbol Parameter Value Unit
I
AS
Avalanche current, repetitive or not repetitive
(pulse width limited by Tjmax)
30 A
Single pulse avalanche energy (starting
E
AS
Tj=25 °C, ID=IAS, VDD=21 V)
650 mJ
(see Figure 17, Figure 18)
Doc ID 16344 Rev 1 3/13
Page 4
Electrical characteristics STD70NS04ZL
2 Electrical characteristics
(T
=25 °C unless otherwise specified)
CASE
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DG
V
DSR(CL)
I
DSS
I
GSS
V
V
GS(th)
R
DS(on)
1. Gate Oxide, without zener diodes, tested at wafer sorting (I
Figure 17) for electrical schematics
Clamped voltage
Drain-source clamping
voltage (DC)
Zero gate voltage
drain current (VGS = 0)
Gate-body leakage
(1)
current (VDS = 0)
Gate-source
GSS
breakdown voltage
Gate threshold voltage VDS = VGS, ID = 1 mA 1 3 V
Static drain-source on
resistance
ID = 1 mA, VGS = 0
-40 < Tj < 175 °C
= -2 mA, ID = 1 A 40 V
I
GD(CL)
V
= 16 V
DS
= 16 V, Tj = 150 °C
V
DS
= 16 V, Tj = 175 °C
V
DS
V
= ±10 V
GS
= ±10 V,Tj = 175 °C
V
GS
= ±15 V,Tj = 175 °C
V
GS
33 41 V
1
50
100
2
50
150
IGS = ±100 µA 15 V
V
GS
V
GS
= 5 V, I
= 10 V, I
= 30 A 9.5 12.5 mΩ
D
= 30 A 7.5 10.5 mΩ
D
< ± 100nA @ ± 20V Tj=25°) (see
GSS
µA
µA
µA
µA
µA
µA
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
g
fs
C
C
C
t
r(Voff)
Q
Q
Q
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
4/13 Doc ID 16344 Rev 1
Forward transconductance V
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
Off voltage rise time
t
Fall time
f
t
Cross-over time
c
Total gate charge
g
Gate-source charge
gs
Gate-drain charge
gd
=15 V, ID = 30 A - 50 - S
DS
=25 V, f=1 MHz, VGS=0 -
V
DS
V
V
= 32 V, ID=60 A,
CLAMP
=10 V, RG=4.7 Ω
GS
(see Figure 16)
VDD=32 V, ID = 60 A
=5 V
V
GS
(see Figure 15)
1800
625
220
70
-
95
185
32
-
12
17
pF
-
pF
pF
ns
-
ns
ns
nC
-
nC
nC
Page 5
STD70NS04ZL Electrical characteristics
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
I
SDM
V
SD
Q
I
RRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Source-drain current
SD
Source-drain current
(1)
(pulsed)
(2)
Forward on voltage ISD=60 A, VGS=0 - 1.5 V
t
Reverse recovery time
rr
Reverse recovery charge
rr
Reverse recovery current
I
SD
V
(see Figure 16)
=60 A, di/dt = 100 A/µs,
= 25 V, Tj=150 °C
DD
40
40
70
280AA
ns
nC
A
-
-
2.3
Doc ID 16344 Rev 1 5/13
Page 6
Electrical characteristics STD70NS04ZL
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
I
D
(A)
AM05480v1
100
10
Operation in this area is
Limited by max R
DS(on)
Tj=175°C
Tc=25°C
Sinlge
100µs
1ms
10ms
pulse
1
0.1
Figure 4. Output characteristics Figure 5. Transfer characteristics
I
D
1
(A)
10
VGS=10V
250
200
150
DS
(V)
V
AM05481v1
I
(A)
D
DS
=10 V
V
250
6V
200
150
5V
100
50
4V
100
50
AM05482v1
0
0
Figure 6. Normalized B
BV
DSS
1
2
3
vs temperature Figure 7. Static drain-source on resistance
VDSS
V
DS
4
(V)
AM05483v1
R
DS(on)
(norm)
1.05
1.00
0.95
I
D
= 1 mA
0.90
0.85
-75
-25
25
75
125
T
J
(°C)
6/13 Doc ID 16344 Rev 1
0
(mΩ)
10.5
9.5
8.5
7.5
6.5
0
2
10
0
20
4
T
30
C
=25°C
40
8
V
GS
6
V
50
(V)
AM05484v1
GS
=5V
V
GS
=10V
60
D
(A)
I
Page 7
STD70NS04ZL Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
V
GS
(V)
10
VDD=32V
D
=60A
I
8
AM05485v1
C
(pF)
3500
3000
2500
AM05486v1
6
4
2
0
0
10
20
30
40
50
Q
g
(nC)
Figure 10. Normalized gate threshold voltage
vs temperature
V
GS(th)
(norm)
1.15
1.05
0.95
0.85
0.75
0.65
0.55
-50
-25
AM05487v1
25
75
0
50
100
125 150
T
J
(°C)
2000
1500
1000
500
0
0
10
5
15
20
25
Figure 11. Normalized on resistance vs
temperature
R
DS(on)
(norm)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
-25
25
75
50
0
100
125
150
30
V
AM05488v1
T
J
(°C)
Ciss
Coss
Crss
DS
(V)
Figure 12. Source-drain diode forward
characteristics
V
SD
(V)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0
10
20
30
TJ=-55°C
TJ=175°C
40
TJ=25°C
50
AM05489v1
I
SD
60
(A)
Doc ID 16344 Rev 1 7/13
Page 8
Test circuits STD70NS04ZL
3 Test circuits
Figure 13. Switching times test circuit for
PW
resistive load
VD
VGS
RG
RL
D.U.T.
2200
µF
3.3
µF
AM01468v1
V
DD
Figure 15. Test circuit for inductive load
G
25
Ω
switching and diode recovery times
A
D
D.U. T.
S
B
R
FAST
DIODE
G
A
A
L=100µH
B
B
D
G
S
3.3
µF
1000
µF
V
DD
Figure 14. Gate charge test circuit
V
i=20V=VGMAX
PW
2200
µF
1kΩ
12V
IG=CONST
2.7kΩ
47kΩ
47kΩ
100Ω
100nF
D.U.T.
AM01469v1
Figure 16. Unclamped inductive load test
circuit
L
VD
ID
Vi
D.U. T.
2200
µF
3.3
µF
1kΩ
VDD
V
VDD
G
Pw
AM01470v1
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
V(BR)DSS
VD
IDM
VDD
ID
VDD
AM01472v1
0
0
8/13 Doc ID 16344 Rev 1
10%
tdon
ton
90%
tr
10%
tdoff
VDS
90%
V
GS
AM01471v1
toff
tf
90%
10%
AM01473v1
Page 9
STD70NS04ZL Package mechanical data
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
®
packages, depending on their level of environmental compliance. ECOPACK®
Doc ID 16344 Rev 1 9/13
Page 10
Package mechanical data STD70NS04ZL
DIM.
mm.
min. typ max.
A 2.20 2.40
A1 0.901.10
A2 0.03 0.23
b 0.64 0.90
b4 5.20 5.40
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
D1 5.10
E 6.40 6.60
E1 4.70
e2.28
e1 4.40 4.60
H 9.35 10.10
L1
L1 2.80
L2 0.80
L4 0.60 1
R0.20
V2 0
o
8
o
TO-252 (DPAK) mechanical data
0068772_G
10/13 Doc ID 16344 Rev 1
Page 11
STD70NS04ZL Packaging mechanical data
5 Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
TAPE MECHANICAL DATA
DIM.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D 1.5 1.6 0.059 0.063
D1 1.5 0.059
E 1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R 40 1.574
W 15.7 16.3 0.618 0.641
mm inch
MIN. MAX. MIN. MAX.
REEL MECHANICAL DATA
DIM.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22.4 0.881
BASE QTY BULK QTY
mm inch
MIN. MAX. MIN. MAX.
2500 2500
Doc ID 16344 Rev 1 11/13
Page 12
Revision history STD70NS04ZL
6 Revision history
Table 8. Document revision history
Date Revision Changes
01-Oct-2009 1 First release
12/13 Doc ID 16344 Rev 1
Page 13
STD70NS04ZL
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Doc ID 16344 Rev 1 13/13
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