Page 1
low gate charge STripFET™ Power MOSFET
3
Features
Type V
STD6NF10 100 V < 0.250 Ω 6 A
STU6NF10 100 V < 0.250 Ω 6 A
■ Exceptional dv/dt capability
■ 100% avalanche tested
DSS
Application
■ Switching applications
Description
R
DS(on)
max I
STD6NF10
STU6NF10
N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK
D
3
1
IPAK
2
1
DPAK
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
Figure 1. Internal schematic diagram
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC
converters for telecom and computer applications.
It is also intended for any applications with low
gate drive requirements.
Table 1. Device summary
Order codes Marking Package Packaging
STD6NF10T4 D6NF10 DPAK Tape and reel
STU6NF10 6NF10 IPAK Tube
November 2008 Rev 6 1/14
www.st.com
14
Page 2
Contents STD6NF10, STU6NF10
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
Page 3
STD6NF10, STU6NF10 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
I
V
V
DM
P
I
I
DS
GS
D
D
(1)
tot
Drain-source voltage (VGS = 0) 100 V
Gate- source voltage ± 20 V
Drain current (continuous) at TC = 25 °C 6 A
Drain current (continuous) at TC = 100 °C 4 A
Drain current (pulsed) 24 A
Total dissipation at TC = 25 °C 30 W
Derating factor 0.2 W/°C
(2)
dv/dt
(3)
E
AS
T
stg
T
j
1. Pulse width limited by safe operating area.
2. ISD ≤ 6 A, di/dt ≤ 300 A/µs, VDD ≤ V
3. Starting Tj = 25 °C, ID = 3 A, VDD = 50 V
Peak diode recovery voltage slope 40 V/ns
Single pulse avalanche energy 200 mJ
Storage temperature
-65 to 175 °C
Max. operating junction temperature
, Tj ≤ T
(BR)DSS
JMAX
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
R
thj-amb
T
J
Thermal resistance junction-case max 5 °C/W
Thermal resistance junction-ambient max 100 °C/W
Maximum lead temperature for soldering purpose 300 °C
3/14
Page 4
Electrical characteristics STD6NF10, STU6NF10
2 Electrical characteristics
(T
= 25 °C unless otherwise specified)
CASE
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
GS
Gate-body leakage
current (V
DS
= 0)
= 0)
ID = 250 µA, VGS =0 100 V
V
= max rating
DS
VDS =max rating,
= 125 °C
T
C
1
10
VGS = ± 20 V ±100 nA
Gate threshold voltage VDS = VGS, ID = 250 µA 2 4 V
Static drain-source on
resistance
V
= 10 V, ID = 3 A 0.22 0.25 Ω
GS
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
fs
C
C
C
t
d(on)
t
t
d(off)
t
Q
Q
Q
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
transconductance
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
Turn-on delay time
Rise time
r
Turn-off delay time
Fall time
f
Total gate charge
g
Gate-source charge
gs
Gate-drain charge
gd
Forward
(1)
g
VDS = > I
R
DS(on)max, ID
= 25 V, f = 1 MHz,
V
DS
= 0
V
GS
= 50 V, ID = 3 A
V
DD
D(on)
x
=3A
RG=4.7 Ω, VGS = 10 V
(see Figure 13)
VDD = 80 V, ID = 6 A,
VGS = 10 V, RG=4.7 Ω
(see Figure 14)
34 S
280
45
20
6
10
20
3
10
14 nC
2.5
4
µA
µA
pF
pF
pF
ns
ns
ns
ns
nC
nC
4/14
Page 5
STD6NF10, STU6NF10 Electrical characteristics
Table 6. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Source-drain current
Source-drain current
(1)
(pulsed)
(2)
Forward on voltage ISD = 6 A, VGS = 0 1.3 V
Reverse recovery time
rr
Reverse recovery charge
rr
Reverse recovery current
ISD = 6 A, di/dt = 100 A/µs,
VDD = 10 V, Tj = 150 °C
(see Figure 15)
70
175
5
24
6
A
A
ns
nC
A
5/14
Page 6
Electrical characteristics STD6NF10, STU6NF10
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Transconductance Figure 7. Static drain-source on resistance
6/14
Page 7
STD6NF10, STU6NF10 Electrical characteristics
Figure 8. Gate charge vs. gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs. temperature
Figure 12. Source-drain diode forward
characteristics
Figure 11. Normalized on resistance vs.
temperature
7/14
Page 8
Test circuits STD6NF10, STU6NF10
3 Test circuits
Figure 13. Switching times test circuit for
resistive load
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 14. Gate charge test circuit
Figure 16. Unclamped Inductive load test
circuit
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
8/14
Page 9
STD6NF10, STU6NF10 Package mechanical data
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/14
Page 10
Package mechanical data STD6NF10, STU6NF10
TO-251 (IPAK) mechanical data
DIM.
A 2.20 2.40
A1 0.901.10
b 0.64 0.90
b2 0.95
b4 5.20 5.40
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
E 6.40 6.60
e2.28
e1 4.40 4.60
H 16.10
L 9.00 9.40
(L1) 0.801.20
L2 0.80
V1
min. typ max.
mm.
10
o
10/14
0068771_H
Page 11
STD6NF10, STU6NF10 Package mechanical data
TO-252 (DPAK) mechanical data
DIM.
A 2.20 2.40
A1 0.901.10
A2 0.03 0.23
b 0.64 0.90
b4 5.20 5.40
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
D1 5.10
E 6.40 6.60
E1 4.70
e2.28
e1 4.40 4.60
H 9 .35 10.10
L1
L1 2.80
L2 0.80
L4 0.60 1
R0.20
V2 0
min. typ max.
o
mm.
o
8
0068772_G
11/14
Page 12
Packing mechanical data STD6NF10, STU6NF10
5 Packing mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22.4 0.881
mm inch
MIN. MAX. MIN. MAX.
TAPE MECHANICAL DATA
DIM.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D 1.5 1.6 0.059 0.063
D1 1.5 0.059
E 1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R 40 1.574
W 15.7 16.3 0.618 0.641
mm inch
MIN. MAX. MIN. MAX.
12/14
BASE QTY BULK QTY
2500 2500
Page 13
STD6NF10, STU6NF10 Revision history
6 Revision history
Table 7. Document revision history
Date Revision Changes
21-Jun-2004 3 Complete version
20-Jul-2006 4 New template, no content change
16-Sep-2008 5 Corrected part number: STU6NF10
Marking label in Table 1 for the device in IPAK has been
19-Nov-2008 6
updated.
value in Table 4 has been updated
I
GSS
13/14
Page 14
STD6NF10, STU6NF10
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