Datasheet std65n55lf3 Datasheet

Features

DPAK

1

3

R

Order code V

STD65N55LF3 55 V < 8.5 mΩ 80 A 110 W

■ Low threshold drive

■ 100% avalanche tested

DSS

DS(on)

max.

I

Pw

D

Application

■ Switching applications

■ Automotive

Description

This product is a N-channel enhancement mode Power MOSFET built with STripFET™ III technology which is especially tailored to minimized on-state resistance and gate charge, providing superior switching performance.

STD65N55LF3

N-channel 55 V, 7.0 mΩ, 80 A DPAK

STripFET™ III Power MOSFET

Figure 1. Internal schematic diagram

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Table 1. Device summary

Order code Marking Package Packaging

STD65N55LF3 65N55LF3 DPAK Tape and reel

October 2010 Doc ID 16371 Rev 2 1/13

www.st.com

13

Contents STD65N55LF3

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

2/13 Doc ID 16371 Rev 2

STD65N55LF3 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

I

DM

P

V

I

TOT

Drain-source voltage (VGS=0) 55 V

DS

Gate-Source voltage ± 20 V

GS

Drain current (continuous) at TC = 25 °C 80 A

D

Drain current (continuous) at TC = 100 °C 56 A

D

(1)

Drain current (pulsed) 320 A

Total dissipation at TC = 25 °C 110 W

Derating factor 0.73 W/°C

(2)

dv/dt

E

AS

T

1. Pulse width limited by safe operating area

2. I

SD

3. Starting Tj = 25 °C, ID = 10 A, VDD = 25 V

Peak diode recovery voltage slope 11 V/ns

(3)

Single pulse avalanche energy 300 mJ

Operating junction temperature

j

Storage temperature

stg

≤ 65 A, di/dt ≤ 300 A/µs, VDD ≤ V

(BR)DSS.

Tj ≤ Tjmax

-55 to 175 °C

Table 3. Thermal resistance

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case max 1.36 °C/W

Rthj-pcb

(1)

Thermal resistance junction-pcb max 50 °C/W

1. When mounted on FR-4 board of 1inch², 2oz Cu.

Doc ID 16371 Rev 2 3/13

Electrical characteristics STD65N55LF3

2 Electrical characteristics

(T

= 25 °C unless otherwise specified)

CASE

Table 4. Static

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source breakdown Voltage

Zero gate voltage drain current (VGS = 0)

Gate body leakage current

= 0)

(V

DS

Gate threshold voltage V

Static drain-source on resistance

= 250 µA, VGS= 0 55 V

I

D

= Max rating,

V

DS

= Max rating,Tc = 125 °C

V

DS

V

= ± 20 V ±200 nA

GS

= VGS, ID = 250 µA 1 2.5 V

DS

= 10 V, ID= 32 A 7.0 8.5 mΩ

V

GS

= 5 V, ID= 32 A 8.5 12 mΩ

V

GS

10

100µAµA

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

C

Q

Input capacitance

iss

Output capacitance

oss

Reverse transfer capacitance

rss

Total gate charge

g

Gate-source charge

gs

Gate-drain charge

gd

= 25 V, f=1 MHz,

V

DS

=0

V

GS

VDD= 27.5 V, ID = 65 A

= 5 V

V

GS

(see Figure 16)

2200

-

47035-pFpF

20

-

8 8

-nCnC

pF

nC

4/13 Doc ID 16371 Rev 2

STD65N55LF3 Electrical characteristics

Table 6. Switching on/off (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

t

d(on)

t

d(off)

Turn-on delay time

t

Rise time

r

Turn-off delay time

t

Fall time

f

= 27 V, ID= 32 A,

V

DD

RG= 4.7 Ω, VGS=10 V

(see Figure 15)

10

25

50

10

-

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

SDM

V

Q

I

RRM

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%

Source-drain current

SD

Source-drain current (pulsed)

Forward on voltage ISD=65 A, VGS=0 - 1.5 V

SD

Reverse recovery time

t

rr

Reverse recovery charge

rr

Reverse recovery current

(1)

=65 A,

I

SD

di/dt =100 A/µs,

=30 V, Tj=150 °C

V

DD

(see Figure 17)

-

40

-

60

80

320AA

3

ns ns

ns

nC

A

Doc ID 16371 Rev 2 5/13

Electrical characteristics STD65N55LF3

I

D

100

10

1

0.1

1

100

V

DS

(V)

10

(A)

Operation in this area is

Limited by max R

DS(on)

100µs

1ms

10ms

Tj=175°C

Tc=25°C Single pulse

AM08207v1

I

D

150

100

50

0

2

V

DS

(V)

4

(A)

1

3

5

200

5V

6V

4V

VGS=10V

6

AM08208v1

I

D

150

100

50

0

4

V

GS

(V)

8

(A)

2

6

200

V

DS

=7V

AM08209v1

BV

DSS

-75

T

J

(°C)

(norm)

-25

75

25

125

0.90

0.95

1.00

1.05

1.10

175

AM08210v1

R

DS(on)

6.80

6.60

6.40

6.20 0

20

I

D

(A)

(Ohm)

10

30

7.00

7.20

50

40

60

V

GS

=10V

AM08211v1

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance

Figure 4. Output characteristics Figure 5. Transfer characteristics

Figure 6. Normalized B

6/13 Doc ID 16371 Rev 2

vs temperature Figure 7. Static drain-source on resistance

VDSS

STD65N55LF3 Electrical characteristics

V

GS

6

4

2

0

5

Q

g

(nC)

(V)

20

8

10

15

10

VDD=27.5V

I

D

=65A

25

30

35

AM08212v1

C

100

10

0.1

10

V

DS

(V)

(pF)

1

Ciss

Coss

Crss

1000

AM08213v1

V

GS(th)

0.6

0.4

0.2

0

-75

T

J

(°C)

(norm)

-25

0.8

125

25

75

175

1.0

1.2

AM08214v1

R

DS(on)

1.2

1.0

0.8

0.6

-75

T

J

(°C)

(norm)

-25

75

25

125

175

1.4

1.6

1.8

2.0

V

GS

=10V

I

D

=32A

AM08215v1

V

SD

0

20

I

SD

(A)

(V)

10

50

30

40

0.45

0.55

0.65

0.75

0.85

0.95

TJ=-55°C

TJ=175°C

TJ=25°C

60

AM08216v1

Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations

Figure 10. Normalized gate threshold voltage

vs temperature

Figure 12. Source-drain diode forward

characteristics

Figure 11. Normalized on resistance vs

temperature

Doc ID 16371 Rev 2 7/13

Test circuits STD65N55LF3

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF

3.3 μF

V

DD

AM01469v1

VDD

47kΩ

1kΩ

47kΩ

2.7kΩ

1kΩ

12V

V

i=20V=VGMAX

2200 μF

PW

IG=CONST

100Ω

100nF

D.U.T.

V

G

AM01470v1

A

D

D.U. T.

S

B

G

25

Ω

A

B

R

G

FAST DIODE

D

S

L=100μH

μF

3.3

1000

μF

V

DD

AM01471v1

Vi

Pw

VD

ID

D.U. T.

L

2200

μF

3.3 μF

VDD

AM01472v1

V(BR)DSS

VDD

VD

IDM

ID

AM01473v1

VDS

ton

tdon

tdoff

toff

tf

tr

90%

10%

0

90%

10%

V

GS

3 Test circuits

Figure 13. Switching times test circuit for

resistive load

Figure 15. Test circuit for inductive load

switching and diode recovery times

Figure 14. Gate charge test circuit

Figure 16. Unclamped inductive load test

circuit

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

8/13 Doc ID 16371 Rev 2

STD65N55LF3 Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

®

packages, depending on their level of environmental compliance. ECOPACK®

Doc ID 16371 Rev 2 9/13

Package mechanical data STD65N55LF3

DIM.

mm.

.xampyt.nim

04.202.2A

01.109.01A

32.030.02A

09.046.0b

04.502.54b

06.054.0c

06.084.02c

02.600.6D

01.51D

06.604

.6E

07.41E

82.2e

06.404.41e

01.0153.9H

1L

08.21L

08.02L

106.04L

02.0R

V2 0

o

8

o

TO-252 (DPAK) mechanical data

0068772_G

10/13 Doc ID 16371 Rev 2

STD65N55LF3 Packaging mechanical data

TAPE AND REEL SHIPMENT

DPAK FOOTPRINT

DIM.

mm inch

MIN. MAX. MIN. MAX.

A 330 12.992

B 1.5 0.059

C 12.8 13.2 0.504 0.520

D 20.2 0.795

G 16.4 18.4 0.645 0.724

N 50 1.968

T 22.4 0.881

BASE QTY BULK QTY

2500 2500

REEL MECHANICAL DATA

DIM.

mm inch

MIN. MAX. MIN. MAX.

A0 6.8 7 0.267 0.275

B0 10.4 10.6 0.409 0.417

B1 12.1 0.476

D 1.5 1.6 0.059 0.063

D1 1.5 0.059

E 1.65 1.85 0.065 0.073

F 7.4 7.6 0.291 0.299

K0 2.55 2.75 0.100 0.108

P0 3.9 4.1 0.153 0.161

P1 7.9 8.1 0.311 0.319

P2 1.9 2.1 0.075 0.082

R 40 1.574

W 15.7 16.3 0.618 0.641

TAPE MECHANICAL DATA

All dimensions are in millimeters

5 Packaging mechanical data

Doc ID 16371 Rev 2 11/13

Revision history STD65N55LF3

6 Revision history

Table 8. Revision history

Date Revision Changes

20-Oct-2009 1 First release.

12-Oct-2010 2 Document status promoted from preliminary data to datasheet.

12/13 Doc ID 16371 Rev 2

STD65N55LF3

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Doc ID 16371 Rev 2 13/13