Page 1
Features
Typ e V
STD65N55F3 55V <8.5mΩ 80A 110W
DSS
R
DS(on)
I
D
STD65N55F3
N-channel 55V - 6.5mΩ - 80A - DPAK
STripFET™ Power MOSFET
Pw
■ Standard threshold drive
■ 100% avalanche tested
Description
This n-channel enhancement mode Power
MOSFET is the latest refinement of
STMicroelectronics' unique “Single Feature
Size™“ strip-based process, which has
decreased the critical alignment steps, offering
remarkable manufacturing reproducibility. The
outcome is a transistor with extremely high
packing density for low onresistance, rugged
avalanche characteristics and low gate charge.
Applications
■ Switching application
– Automotive
3
1
DPAK
Internal schematic diagram
Order code
Part number Marking Package Packaging
STD65N55F3 65N55F3 DPAK Tape & reel
May 2007 Rev 3 1/13
www.st.com
13
Page 2
Contents STD65N55F3
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
Page 3
STD65N55F3 Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
I
DM
P
V
V
I
I
TOT
Drain-source voltage (VGS=0)
DS
Gate-Source voltage ± 20 V
GS
Drain current (continuous) at TC = 25°C
D
Drain current (continuous) at TC = 100°C
D
(1)
Drain current (pulsed) 320 A
Total dissipation at TC = 25°C
55 V
80 A
56 A
110 W
Derating factor 0.73 W/°C
(2)
dv/dt
E
AS
T
T
1. Pulse width limited by safe operating area
2. ISD ≤ 65A, di/dt ≤ 300A/µs, VDD < V
3. Starting Tj = 25°C, Id = 32A, Vdd = 25V
Peak diode recovery voltage slope 11 V/ns
(3)
Single pulse avalanche energy 390 mJ
Operating junction temperature
j
Storage temperature
stg
(BR)DSS.
Tj < Tjmax
-55 to 175 °C
Table 2. Thermal resistance
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case max 1.36 °C/W
(1)
Rthj-pcb
1. When mounted on FR-4 board of 1inch², 2oz Cu.
Thermal resistance junction-pcb max 50 °C/W
3/13
Page 4
Electrical characteristics STD65N55F3
2 Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 3. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source breakdown
Voltage
Zero gate voltage drain
current (VGS = 0)
Gate body leakage current
= 0)
(V
DS
Gate threshold voltage
Static drain-source on
resistance
= 250µA, VGS= 0
I
D
V
= Max rating,
DS
V
= Max rating,Tc = 125°C
DS
= ±20V
V
GS
= VGS, ID = 250µA
V
DS
VGS= 10V, ID= 32A
55 V
10
100µAµA
±200 nA
24V
6.5 8.5 mΩ
Table 4. Dynamic
Symbol Parameter Test conditions Min Typ. Max. Unit
(1)
g
fs
C
C
C
Q
Q
Q
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward transconductance
iss
Input capacitance
Output capacitance
oss
Reverse transfer capacitance
rss
g
Total gate charge
Gate-source charge
gs
Gate-drain charge
gd
V
=25V, ID=32A
DS
=25V, f=1MHz, VGS=0
V
DS
=27V, ID = 65A
V
DD
V
=10V
GS
(see Figure 15)
50 S
2200
500
25
33.5
45 nC
12.5
9.5
pF
pF
pF
nC
nC
4/13
Page 5
STD65N55F3 Electrical characteristics
Table 5. Switching on/off (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
=27V, ID= 32A,
V
t
d(on)
t
d(off)
Turn-on delay time
t
Rise time
r
Turn-off delay time
t
Fall time
f
DD
=4.7Ω, VGS=10V
R
G
(see Figure 14)
V
=27V, ID= 32A,
DD
=4.7Ω, VGS=10V
R
G
(see Figure 14)
20
50
35
11.5
ns
ns
ns
ns
Table 6. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
I
SDM
V
Q
I
RRM
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Source-drain current
SD
Source-drain current (pulsed)
Forward on voltage
SD
t
rr
Reverse recovery time
Reverse recovery charge
rr
Reverse recovery current
(1)
I
=65A, VGS=0
SD
=65A, di/dt =100A/µs,
I
SD
=25V, Tj=150°C
V
DD
(see Figure 16)
47
87
3.7
80
320AA
1.5 V
ns
nC
A
5/13
Page 6
Electrical characteristics STD65N55F3
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characteristics Figure 4. Transfer characteristics
Figure 5. Normalized BV
vs temperature Figure 6. Static drain-source on resistance
DSS
6/13
Page 7
STD65N55F3 Electrical characteristics
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage
vs temperature
Figure 11. Source-drain diode forward
characteristics
Figure 10. Normalized on resistance vs
temperature
7/13
Page 8
Test circuit STD65N55F3
3 Test circuit
Figure 12. Unclamped inductive load test
circuit
Figure 14. Switching times test circuit for
resistive load
Figure 13. Unclamped inductive waveform
Figure 15. Gate charge test circuit
Figure 16. Test circuit for inductive load
8/13
switching and diode recovery times
Figure 17. Switching time waveform
Page 9
STD65N55F3 Package mechanical data
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/13
Page 10
Package mechanical data STD65N55F3
DPAK MECHANICAL DATA
DIM.
A 2.2 2.4 0.086 0.094
A1 0.9 1 .1 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.9 0.025 0.035
b4 5.2 5.4 0.204 0.212
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
D1 5.1 0.200
E 6.4 6.6 0.252 0.260
E1 4.7 0.185
e 2.28 0.090
e1 4.4 4.6 0.173 0.181
H 9.35 10.1 0.368 0.397
L 1 0.039
(L1) 2.8 0.110
L2 0.8 0.031
L4 0.6 1 0.023 0.039
R 0.2 0.008
V2 0° 8° 0° 8°
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
10/13
0068772-F
Page 11
STD65N55F3 Packaging mechanical data
5 Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22.4 0.881
mm inch
MIN. MAX. MIN. MAX.
TAPE MECHANICAL DATA
DIM.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D 1.5 1.6 0.059 0.063
D1 1.5 0.059
E 1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R 40 1.574
W 15.7 16.3 0.618 0.641
mm inch
MIN. MAX. MIN. MAX.
BASE QTY BULK QTY
2500 2500
11/13
Page 12
Revision history STD65N55F3
6 Revision history
Table 7. Revision history
Date Revision Changes
08-Feb-2007 1 First release
22-Feb-2007 2 Description has been changed
11-May-2007 3 Improved current values
12/13
Page 13
STD65N55F3
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