Datasheet std60nf55l-1 Datasheet

Page 1
N-channel 55V - 0.012Ω - 60A - DPAK/IPAK
3
General features
Type V
STD60NF55L-1 55V <0.015Ω 60A
STD60NF55L 55V <0.015Ω 60A
■ Low threshold drive
DSS
R
DS(on)
STD60NF55L
STD60NF55L-1
STripFET™ II Power MOSFET
I
D
3
1
2
1
This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Applications
■ Switching application
DPAK
IPAK
Internal schematic diagram
Order codes
Part number Marking Package Packaging
STD60NF55LT4 D60NF55L DPAK Tape & reel
STD60NF55L-1 D60NF55L IPAK Tube
July 2006 Rev 6 1/14
www.st.com
14
Page 2
Contents STD60NF55L - STD60NF55L-1
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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Page 3
STD60NF55L - STD60NF55L-1 Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit
I
V
V
DM
P
I
I
DS
GS
D
D
(1)
tot
Drain-source voltage (VGS = 0) 55 V
Gate- source voltage ± 15 V
Drain current (continuous) at TC = 25°C 60 A
Drain current (continuous) at TC = 100°C 42 A
Drain current (pulsed) 240 A
Total dissipation at TC = 25°C 110 W
Derating Factor 0.73 W/°C
(2)
dv/dt
Peak diode recovery voltage slope 16 V/ns
(3)
E
AS
T
stg
T
j
1. Pulse width limited by safe operating area.
2. ISD ≤ 40A, di/dt ≤ 350A/µs, VDD ≤ V(
3. Starting Tj = 25 oC, ID = 17.5A, VDD =24V
Single pulse avalanche energy 400 mJ
Storage temperature
-55 to 175 °C
Max. operating junction temperature
BR)DSS
, Tj ≤ T
JMAX
.

Table 2. Thermal data

Rthj-case Thermal resistance junction-case max 1.36 °C/W
Rthj-amb Thermal resistance junction-to ambient max 62.5 °C/W
T
J
Maximum lead temperature for soldering purpose 275 °C
3/14
Page 4
Electrical characteristics STD60NF55L - STD60NF55L-1

2 Electrical characteristics

(T
=25°C unless otherwise specified)
CASE

Table 3. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source breakdown voltage
Zero gate voltage drain current (V
GS
Gate-body leakage current (V
DS
= 0)
= 0)
ID = 250µA, VGS =0 55 V
V
= Max rating
DS
VDS = Max rating,
= 125°C
T
C
1
10
VGS = ± 15V ±100 nA
Gate threshold voltage VDS = VGS, ID = 250µA 1 2 V
Static drain-source on resistance
= 10V, ID = 30A
V
GS
= 4.5V, ID = 30A
V
GS
0.012
0.014
0.015
0.017

Table 4. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit
Forward
(1)
g
fs
transconductance
V
= 10V, ID= 30A 35 S
DS
µA µA
Ω
Ω
C
C
C
t
d(on)
t
t
d(off)
t
Q
Q
Q
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
Turn-on delay time Rise time
r
Turn-off delay time Fall time
f
Total gate charge
g
Gate-source charge
gs
Gate-drain charge
gd
= 25V, f = 1MHz,
V
DS
VGS = 0
= 25V, ID = 30A
V
DD
=4.7Ω VGS = 4.5V
R
G
(see Figure 12)
VDD = 40V, ID = 60A,
= 5V, RG=4.7Ω
V
GS
(see Figure 13)
1950
390 130
30
180
80 35
40 10 20
pF pF pF
ns ns ns ns
56 nC
nC nC
4/14
Page 5
STD60NF55L - STD60NF55L-1 Electrical characteristics

Table 5. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Source-drain current Source-drain current
(1)
(pulsed)
(2)
Forward on voltage ISD = 60A, VGS = 0 1.3 V
Reverse recovery time
rr
Reverse recovery charge
rr
Reverse recovery current
ISD = 40A, di/dt = 100A/µs, VDD = 25V, Tj = 150°C (see Figure 14)
65
130
4
60
240
A A
ns
nC
A
5/14
Page 6
Electrical characteristics STD60NF55L - STD60NF55L-1

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characterisics Figure 4. Transfer characteristics
Figure 5. Transconductance Figure 6. Static drain-source on resistance
6/14
Page 7
STD60NF55L - STD60NF55L-1 Electrical characteristics
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage
vs temperature
Figure 11. Source-drain diode forward
characteristics
Figure 10. Normalized on resistance vs
temperature
7/14
Page 8
Test circuit STD60NF55L - STD60NF55L-1

3 Test circuit

Figure 12. Switching times test circuit for
resistive load
Figure 14. Test circuit for inductive load
switching and diode recovery times

Figure 13. Gate charge test circuit

Figure 15. Unclamped Inductive load test
circuit

Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform

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Page 9
STD60NF55L - STD60NF55L-1 Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
9/14
Page 10
Package mechanical data STD60NF55L - STD60NF55L-1
DPAK MECHANICAL DATA
DIM.
A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009
B 0.64 0.9 0.025 0.035
b4 5.2 5.4 0.204 0.212
C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244 D1 5.1 0.200
E 6.4 6.6 0.252 0.260 E1 4.7 0.185
e 2.28 0.090
e1 4.4 4.6 0.173 0.181
H 9.35 10.1 0.368 0.397
L 1 0.039
(L1) 2.8 0.110
L2 0.8 0.031 L4 0.6 1 0.023 0.039
R 0.2 0.008 V2 0° 8° 0° 8°
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
10/14
0068772-F
Page 11
STD60NF55L - STD60NF55L-1 Package mechanical data
0068771-E
TO-251 (IPAK) MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
H
C
A
E
= =
C2
L2
B2
= =
D
B3
2
1 3
L1
B6
A1
L
A3
B
B5
G
= =
11/14
Page 12
Packing mechanical data STD60NF55L - STD60NF55L-1

5 Packing mechanical data

DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22.4 0.881
mm inch
MIN. MAX. MIN. MAX.
TAPE MECHANICAL DATA
DIM.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D 1.5 1.6 0.059 0.063
D1 1.5 0.059
E 1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R 40 1.574
W 15.7 16.3 0.618 0.641
mm inch
MIN. MAX. MIN. MAX.
12/14
BASE QTY BULK QTY
2500 2500
Page 13
STD60NF55L - STD60NF55L-1 Revision history

6 Revision history

Table 6. Revision history

Date Revision Changes
14-Mar-2005 3 Preliminary version
18-May-2005 4 New package inserted: IPAK
18-Nov-2005 5 Changed value in Ta b l e 4 (Rise Time from 18 to 180ns)
19-Jul-2006 6 New template, no content change
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Page 14
STD60NF55L - STD60NF55L-1
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