Page 1
STD5N20L
N-CH A NNEL 200V - 0. 65Ω - 5A DPAK
STripFET™ MOSF ET
Table 1: Ge neral Features
TYPE V
STD5N20L 200 V < 0.7 Ω 5 A 33 W
■ TYPICAL R
■ CONDUCTION LOSSES REDUCED
■ LOW INPUT CAPACIATNCE
■ LOW THRESHOLD DEVICE
DSS
(on) = 0.65 Ω @ 5V
DS
R
DS(on)
I
Pw
D
DESCRIPTION
The STD5N20L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the m ost demanding DC
Motor Control and lighting application.
APPLICATIONS
■ UPS AND MOTOR CONTROL
■ LIGHTING
Figure 1: Package
3
1
DPAK
Figure 2: Internal Schematic Diagram
Table 2: Order Codes
SALES TYPE MARKING PACKAGE PACKAGING
STD5N20LT4 D5N20L DPAK TAPE & REEL
NEW DATASHEET ACCORDING TO PCN DSG-TRA/04/532
Rev. 3
1/10September 2004
Page 2
STD5N20L
Table 3: Absolute Maximum ratings
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
T
stg
T
j
() Pulse width limited by safe operating area
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case Max 3.75 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W
T
l
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
200 V
200 V
Gate- source Voltage ±20 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
()
Drain Current (pulsed) 20 A
Total Dissipation at TC = 25°C
5A
3.6 A
33 W
Derating Factor 0.27 W/°C
Storage Temperature
Operating Junction Temperature
–55 to 150 °C
Maximum Lead Temperature For Soldering Purpose 275 °C
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
Table 5: On/Off
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leaka ge
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
Resistance
ID = 250 µA, VGS = 0 200 V
V
= Max Rating
= 0)
DS
VDS= Max Rating, TC= 125°C
V
= ±20V ±100 nA
GS
V
= VGS, ID = 50µA
DS
12.5V
VGS = 5 V, ID = 2.5 A 0.65 0.7 Ω
1µA
10 µA
2/10
Page 3
STD5N20L
Table 6: Dynamic
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(2) Forward Transconductance VDS = 15 V, I
g
fs
C
C
C
t
d(on)
t
d(off)
Q
Q
Q
iss
oss
rss
t
r
t
f
gs
gd
g
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 100 V, ID = 2.5 A
V
DD
R
= 4.7Ω, VGS = 5V
G
(Resistive Load see Figure 14)
VDD = 160 V, ID = 5 A,
VGS = 5V
= 25V, f = 1 MHz, VGS = 0 242
5 A 6.5 S
D =
44
6
11.5
21.5
14
15.5
5
6nC
1.5
3
pF
pF
pF
ns
ns
ns
ns
nC
nC
Table 7: Source Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
(1) Pulsed: Pulse du rat i on = 300 µs, du ty cycle 1.5 % .
(2) Starting T
(*) Pulse width limited by safe operating area
Source-drain Current 5 A
(*)
Source-drain Current (pulsed) 20 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
=25 °C, Id = 5 A, VDD = 50 V
j
ISD = 5 A, VGS = 0
= 5 A, di/dt = 100 A/µs,
I
SD
V
= 100 V, Tj = 25°C
DD
(see test circuit, see Figure 15)
= 5 A, di/dt = 100 A/µs,
I
SD
VDD = 100 V, Tj = 150°C
(see test circuit, see Figure 15)
93
237
5.1
97
286
5.9
1.5 V
ns
nC
A
ns
nC
A
3/10
Page 4
STD5N20L
Figure 3: Safe Operating Area
Figure 4: Output Characteristics
Figure 6: Thermal Impedance
Figure 7: Transfer Characteristics
Figure 5: Transconductance
4/10
Figure 8: Static Drain-source On Resistance
Page 5
STD5N20L
Figure 9: Gate Charge vs Gate-source Voltag e
Figure 10: Normalized Gate Thereshold Voltage vs Temperature
Figure 12: Capacitance Variations
Figure 13: Normal ized On R esistance vs Temperature
Figure 11: S ource-Drain Diode Forw ard Characteristics
5/10
Page 6
STD5N20L
Figure 14: Switching Times Test Circuit For Resistive Load
Figure 15: Test Circuit For Inductive Load Switching and Diode Recovery Times
Figure 16: Gate Charge Test Circuit
6/10
Page 7
TO-252 (DPAK) MECHANICAL DATA
STD5N20L
DIM.
A 2.20 2.40 0.087 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.213
C 0.45 0.60 0.018 0.024
C2 0.48 0.60 0.019 0.024
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.252 0.260
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.398
L2 0.8 0.031
L4 0.60 1.00 0.024 0.039
V2 0
MIN. TYP. MAX. MIN. TYP. MAX.
o
mm inch
o
8
o
0
o
0
P032P_B
7/10
Page 8
STD5N20L
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*
All dimensions
are in millimeters
REEL MECHANICAL DATA
DIM.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22.4 0.881
mm inch
MIN. MAX. MIN. MAX.
TAPE MECHANICAL DATA
DIM.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D 1.5 1.6 0.059 0.063
D1 1.5 0.059
E 1.65 1.85 0.065 0.073
F 7. 4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R 40 1.574
W 15.7 16.3 0.618 0.641
* on sales type
mm inch
MIN. MAX. MIN. MAX.
BASE QTY BULK QTY
2500 2500
8/10
Page 9
Table 8: Revision History
Date Revision Description of Change s
08-June-2004 2 New Stylesheet. Datasheet according to PCN DSG-TRA/04/532
20-Sep-2004 3 Changes on Table 3, and on Figure 3.
STD5N20L
9/10
Page 10
STD5N20L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of s uch inf ormati on nor for a ny infr ing eme nt o f p atent s or o ther ri ghts of third parti es wh ich m ay res ult fr om it s us e. No li cens e i s gr an ted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2004 STMicroelectronics - All Rights Reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
10/10
Loading...