Datasheet std55n4f5 Datasheet

Features

R

Type V

DSS

DS(on)

max

STD55N4F5 40 V < 8.5 mΩ 55 A 60 W

I

D

STD55N4F5

N-channel 40 V, 7.3 mΩ, 40 A, DPAK

STripFET™ V Power MOSFET

Pw

■ Standard threshold drive

■ 100% avalanche tested

■ Surface mounting DPAK (TO-252)

Applications

■ Switching applications

– Automotive

Description

The STD55N4F5 is a N-channel STripFET This Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM).

TM

V.

3

1

DPAK

Figure 1. Internal schematic diagram

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Table 1. Device summary

Order code Marking Package Packaging

STD55N4F5 55N4F5 DPAK Tape and reel

June 2010 Doc ID 15661 Rev 3 1/13

!-V

www.st.com

13

Contents STD55N4F5

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

2/13 Doc ID 15661 Rev 3

STD55N4F5 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

I

V

I

D

DM

P

I

TOT

Drain-source voltage (VGS=0) 40 V

DS

Gate-source voltage ± 20 V

GS

(1)

Drain current (continuous) at TC = 25 °C 55 A

Drain current (continuous) at TC = 100 °C 39 A

D

(2)

Drain current (pulsed) 220 A

Total dissipation at TC = 25 °C 60 W

Derating factor 0.4 W/°C

(3)

dv/dt

E

AS

T

Peak diode recovery voltage slope 15 V/ns

(4)

Single pulse avalanche energy 100 mJ

Operating junction temperature

j

Storage temperature

stg

- 55 to 175 °C

1. Current limited by package

2. Pulse width limited by safe operating area

3. ISD ≤ 55 A, di/dt ≤ 400 A/µs, VDS ≤ V

(BR)DSS

, Tj ≤ Tjmax

4. Starting TJ = 25 °C, ID = 27.5 A, VDD = 25 V

Table 3. Thermal resistance

Symbol Parameter Value Unit

R

thj-case

thj-pcb

Thermal resistance junction-case max 2.5 °C/W

(1)

Thermal resistance junction-ambient max 50 °C/W

1. When mounted on 1inch² FR-4 2Oz Cu board

Doc ID 15661 Rev 3 3/13

Electrical characteristics STD55N4F5

2 Electrical characteristics

(T

= 25 °C unless otherwise specified)

CASE

Table 4. Static

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source breakdown voltage

Zero gate voltage drain current (VGS = 0)

Gate body leakage current

= 0)

(V

DS

= 250 µA, VGS= 0 40 V

I

D

= Max rating,

V

DS

= Max rating,Tc = 125 °C

V

DS

V

= ±20 V 100 nA

GS

110µA

Gate threshold voltage VDS= VGS, ID = 250 µA 2 4 V

Static drain-source on resistance

V

= 10 V, ID= 27.5 A 7.3 8.5 mΩ

GS

Table 5. Dynamic

Symbol Parameter Test conditions Min Typ. Max. Unit

C

Q

Input capacitance

iss

Output capacitance

oss

Reverse transfer capacitance

rss

Total gate charge

g

Gate-source charge

gs

Gate-drain charge

gd

=25 V, f=1 MHz, VGS=0 -

V

DS

VDD=20 V, ID = 27.5 A

=10 V

V

GS

Figure 14

1600

23030-pFpF

25

-

7 6

-nCnC

µA

pF

nC

4/13 Doc ID 15661 Rev 3

STD55N4F5 Electrical characteristics

Table 6. Switching on/off (resistive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

t

d(on)

t

d(off)

t

Turn-on delay time Rise time

r

Turn-off delay time Fall time

f

VDD=20 V, ID= 27.5 A,

=4.7 Ω, VGS=10 V

R

G

Figure 16

VDD=20 V, ID= 27.5 A, RG=4.7 Ω, VGS=10 V

Figure 16

15

25

-

6

-

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

SDM

V

SD

Q

I

RRM

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Source-drain current

SD

(1)

Source-drain current (pulsed)

(2)

Forward on voltage ISD=55 A, VGS=0 - 1.5 V

=55 A,

I

t

Reverse recovery time

rr

Reverse recovery charge

rr

Reverse recovery current

SD

di/dt = 100 A/µs,

= 32 V, Tj=150 °C

V

DD

Figure 15

-

40

-

55

220AA

3

ns ns

ns nC

A

Doc ID 15661 Rev 3 5/13

Electrical characteristics STD55N4F5

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance

I

D

(A)

100

10

Operation in this area is

Limited by max R

DS(on)

AM07069v1

100µs

1ms

10ms

10

K

δ=0.5

0.2

0.1

-1

0.05

1

10

1

0.01

-4

0.02

-2

-3

10

V

DS

=5V

2

3

4

10

-1

10

75

6

Tj=175°C

1

VGS=10V

1

Tc=25°C

Single pulse

2

10

Single pulse

-2

10

DS

(V)

V

AM07071v1

10

I

-5

D

(A)

180

160

6V

140

120

100

5V

80

60

40

4V

4

V

DS

3

(V)

20

0

0.1

0.01

0.1

Figure 4. Output characteristics Figure 5. Transfer characteristics

(A)

I

D

180

160

140

120

100

80

60

40

20

0

AM07070v1

0

(s)

t

p

AM07072v1

8

V

GS

(V)

9

Figure 6. Normalized B

BV

DSS

vs temperature Figure 7. Static drain-source on resistance

VDSS

AM07073v1

(norm)

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

-50

-25

25

0

50

75

100

125

T

J

(°C)

6/13 Doc ID 15661 Rev 3

R

DS(on)

(mOhm)

7.35

7.30

7.25

7.20

7.15

7.10

AM07074v1

VGS=10V

40

50

D

(A)

20

0

10

30

I

STD55N4F5 Electrical characteristics

Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations

V

GS

(V)

VDD=20V

D

=55A

I

10

AM07075v1

(pF)

1000

C

AM07076v1

Ciss

8

6

4

2

0

10

5

15

20

251230

Q

g

(nC)

Figure 10. Normalized gate threshold voltage

V (norm)

vs temperature

GS(th)

1.2

1.0

0.8

0.6

0.4

0.2

AM07077v1

100

10

1

0.1

1

10

V

Figure 11. Normalized on resistance vs

temperature

R

DS(on)

(norm)

2.0

1.5

1.0

0.5

Coss

Crss

DS

(V)

AM07078v1

0

-50

-25

25

0

50

75

100

125

Figure 12. Source-drain diode forward

characteristics

V

SD

(V)

TJ=-55°C

1.0

0.8 TJ=25°C

0.6

0.4

0.2

0

10

20

30

40

TJ=175°C

50

T

J

(°C)

AM07079v1

I

SD

(A)

-50

-25

25

0

50

75

100 125

T

J

(°C)

0

Doc ID 15661 Rev 3 7/13

Test circuits STD55N4F5

3 Test circuits

Figure 13. Switching times test circuit for

PW

resistive load

VGS

VD

RG

RL

D.U.T.

2200

µF

3.3

µF

AM01468v1

V

DD

Figure 15. Test circuit for inductive load

G

25

Ω

switching and diode recovery times

A

D

D.U. T.

S

B

R

FAST DIODE

G

A

L=100µH

B

D

G

S

3.3

µF

1000 µF

V

DD

Figure 14. Gate charge test circuit

V

i=20V=VGMAX

PW

2200 µF

1kΩ

12V

IG=CONST

2.7kΩ

47kΩ

100Ω

100nF

D.U.T.

AM01469v1

Figure 16. Unclamped inductive load test

circuit

L

VD

ID

Vi

D.U. T.

2200

µF

3.3 µF

1kΩ

VDD

V

VDD

G

Pw

AM01470v1

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

V(BR)DSS

VD

IDM

ID

VDD

AM01472v1

8/13 Doc ID 15661 Rev 3

0

10%

tdon

ton

90%

tr

10%

V

GS

VDS

90%

tdoff

AM01471v1

toff

tf

90%

10%

AM01473v1

STD55N4F5 Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK

®

packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

Doc ID 15661 Rev 3 9/13

Package mechanical data STD55N4F5

TO-252 (DPAK) mechanical data

DIM.

V2 0

mm.

.xampyt.nim

04.202.2A

01.109.01A

32.030.02A

09.046.0b

04.502.54b

06.054.0c

06.084.02c

02.600.6D

01.51D

.6E

06.604

07.41E

82.2e

06.404.41e

01.0153.9H

1L

08.21L

08.02L

106.04L

02.0R

o

8

10/13 Doc ID 15661 Rev 3

0068772_G

STD55N4F5 Packaging mechanical data

5 Packaging mechanical data

DPAK FOOTPRINT

All dimensions are in millimeters

TAPE AND REEL SHIPMENT

REEL MECHANICAL DATA

DIM.

A 330 12.992

B 1.5 0.059

C 12.8 13.2 0.504 0.520

D 20.2 0.795

G 16.4 18.4 0.645 0.724

N 50 1.968

T 22.4 0.881

TAPE MECHANICAL DATA

DIM.

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

A0 6.8 7 0.267 0.275

B0 10.4 10.6 0.409 0.417

B1 12.1 0.476

D 1.5 1.6 0.059 0.063

D1 1.5 0.059

E 1.65 1.85 0.065 0.073

F 7.4 7.6 0.291 0.299

K0 2.55 2.75 0.100 0.108

P0 3.9 4.1 0.153 0.161

P1 7.9 8.1 0.311 0.319

P2 1.9 2.1 0.075 0.082

R 40 1.574

W 15.7 16.3 0.618 0.641

mm inch

MIN. MAX. MIN. MAX.

2500 2500

Doc ID 15661 Rev 3 11/13

Revision history STD55N4F5

6 Revision history

Table 8. Document revision history

Date Revision Changes

06-May-2009 1 First release

– Document status promoted from target specification to preliminary

10-Jul-2009 2

22-Jun-2010 3 Document status promoted from preliminary data to datasheet

data

–R

max value changed

DS(on)

12/13 Doc ID 15661 Rev 3

STD55N4F5

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Doc ID 15661 Rev 3 13/13