Page 1
Features
R
Type V
STD3NK60ZD 600 V < 3.6Ω 2.4 A
DSS
DS(on)
max
STD3NK60ZD
N-channel 600 V, 3.3 Ω, 2.4 A, DPAK
SuperFREDMesh™ Power MOSFET
I
D
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Fast internal recovery diode
Application
■ Switching applications
Description
The SuperFREDMesh™ series associates all
advantages of reduced on-resistance, Zener gate
protection and very high dv/dt capability with a
fast body-drain recovery diode. Such series
complements the “FDmesh™” advanced
technology.
3
1
DPAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code Marking Package Packaging
STD3NK60ZD 3NK60ZD DPAK Tape and reel
September 2008 Rev 2 1/14
www.st.com
14
Page 2
Contents STD3NK60ZD
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
Page 3
STD3NK60ZD Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
I
DM
P
V
V
Drain-source voltage (VGS = 0) 600 V
DS
Gate- source voltage ± 30 V
GS
Drain current (continuous) at TC = 25 °C 2.4 A
I
D
I
Drain current (continuous) at TC = 100 °C 1.51 A
D
(1)
Drain current (pulsed) 9.6 A
Total dissipation at TC = 2 5°C 45 W
TOT
Derating factor 0.36 W/°C
(2)
dv/dt
T
1. Pulse width limited by safe operating area
2. ISD ≤ 2.4 A, di/dt ≤ 600 A/µs, VDD = 80% V
Peak diode recovery voltage slope 15 V/ns
T
Operating junction temperature
j
Storage temperature
stg
(BR)DSS
-55 to 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
Rthj-amb Thermal resistance junction-ambient max 100 °C/W
Rthj-pcb Thermal resistance junction-pcb max 50 °C/W
Maximum lead temperature for soldering
T
l
purpose
300 °C
Table 4. Avalanche characteristics
Symbol Parameter Max value Unit
I
E
Avalanche current, repetitive or not-repetitive
AR
(pulse width limited by T
max)
j
Single pulse avalanche energy
AS
(starting T
= 25 °C, ID = IAR, VDD = 50 V)
j
2.4 A
150 mJ
3/14
Page 4
Electrical characteristics STD3NK60ZD
2 Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Table 5. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
GS
Gate-body leakage
current (V
DS
= 0)
= 0)
= 1 mA, VGS = 0 600 V
I
D
V
= Max rating
DS
= Max rating, TC=125 °C
V
DS
1
50µAµA
VGS = ± 20 V ± 10 µA
Gate threshold voltage VDS = VGS, ID = 50 µA 3 3.75 4.5 V
Static drain-source on
resistance
V
= 10 V, ID = 1.2 A 3.3 3.6 Ω
GS
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
C
C
C
oss eq
Q
Q
Q
1. C
oss eq
increases from 0 to 80% V
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
Equivalent output
(1)
capacitance
Total gate charge
g
Gate-source charge
gs
Gate-drain charge
gd
. is defined as a constant equivalent capacitance giving the same charging time as C
DSS
= 25 V, f = 1 MHz, VGS = 0
V
DS
= 0, VDS = 0 to 400 V 27 pF
V
GS
= 400 V, ID = 2.4 A,
V
DD
= 10 V
V
GS
(see Figure 16)
311
43
8
11.8
2.6
6.4
when VDS
oss
pF
pF
pF
nC
nC
nC
4/14
Page 5
STD3NK60ZD Electrical characteristics
Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max Unit
t
d(on)
t
d(off)
Turn-on delay time
t
Rise time
r
Turn-off-delay time
t
Fall time
f
= 480 V, ID = 3 A,
V
DD
= 4.7 Ω, V
R
G
(see Figure 15)
GS
= 10 V
9
14
19
14
Table 8. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
Q
I
RRM
Q
I
RRM
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Source-drain current
(1)
Source-drain current (pulsed)
(2)
Forward on voltage ISD = 10 A, VGS = 0 1.6 V
t
Reverse recovery time
rr
Reverse recovery charge
rr
Reverse recovery current
t
Reverse recovery time
rr
Reverse recovery charge
rr
Reverse recovery current
ISD = 2.4 A, di/dt = 100 A/µs
V
(see Figure 20)
ISD = 2.4 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 20)
= 60 V
DD
2.4
9.6AA
98
170
3.4
105
184
3.5
ns
ns
ns
ns
ns
nC
A
ns
nC
A
5/14
Page 6
Electrical characteristics STD3NK60ZD
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Transconductance Figure 7. Static drain-source on resistance
6/14
Page 7
STD3NK60ZD Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 12. Source-drain diode forward
characteristics
Figure 11. Normalized on resistance vs
temperature
Figure 13. Normalized B
vs temperature
VDSS
7/14
Page 8
Electrical characteristics STD3NK60ZD
Figure 14. Maximum avalanche energy vs
temperature
8/14
Page 9
STD3NK60ZD Test circuits
3 Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 17. Test circuit for inductive load
switching and diode recovery times
Figure 16. Gate charge test circuit
Figure 18. Unclamped Inductive load test
circuit
Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform
9/14
Page 10
Package mechanical data STD3NK60ZD
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/14
Page 11
STD3NK60ZD Package mechanical data
TO-252 (DPAK) mechanical data
DIM.
A 2.20 2.40
A1 0.901.10
A2 0.03 0.23
b 0.64 0.90
b4 5.20 5.40
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
D1 5.10
E 6.40 6.60
E1 4.70
e2.28
e1 4.40 4.60
H 9.35 10.10
L1
L1 2.80
L2 0.80
L4 0.60 1
R0.20
V2 0
min. typ max.
o
mm.
o
8
0068772_G
11/14
Page 12
Package mechanical data STD3NK60ZD
5 Package mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22.4 0.881
mm inch
MIN. MAX. MIN. MAX.
TAPE MECHANICAL DATA
DIM.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D 1.5 1.6 0.059 0.063
D1 1.5 0.059
E 1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R 40 1.574
W 15.7 16.3 0.618 0.641
mm inch
MIN. MAX. MIN. MAX.
12/14
BASE QTY BULK QTY
2500 2500
Page 13
STD3NK60ZD Revision history
6 Revision history
Table 9. Document revision history
Date Revision Changes
24-Jul-2008 1 First release
11-Sep-2008 2 Document status changed from preliminay data to datasheet
13/14
Page 14
STD3NK60ZD
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