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std30pf03lt4_std30pf03l-1
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Datasheet std30pf03lt4_std30pf03l-1 Datasheet

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Page 1
P-channel 30 V - 0.025 Ω - 24 A - DPAK / IPAK
3
Features
Type V
STD30PF03LT4 30 V < 0.028 Ω 24 A
STD30PF03L-1 30 V < 0.028 Ω 24 A
■ Standard outline for easy automated surface
DSS
■ Low threshold device
■ Low gate charge
Application
■ Switching applications
R
DS(on)
max I
D
STD30PF03LT4
STD30PF03L-1
STripFET™ II Power MOSFET
DPAK
3
1
IPAK
2
1

Figure 1. Internal schematic diagram

Description
This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on­resistance and low gate charge.

Table 1. Device summary

Order codes Marking Package Packaging
STD30PF03LT4 D30PF03L DPAK Tape & reel
STD30PF03L-1 D30PF03L IPAK Tube
January 2008 Rev 2 1/13
www.st.com
13
Page 2
Electrical ratings STD30PF03LT4 - STD30PF03L-1

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit
Drain-source voltage (VGS=0)
Gate-source voltage ± 16 V
(1)
Drain current (continuous) at TC = 25 °C
(1)
Drain current (continuous) at TC = 100 °C
(2)
Drain current (pulsed) 96 A
Total dissipation at TC=25 °C
I
I
I
DM
P
V
V
D
D
DS
GS
TOT
Derating factor 0.47 W/°C
(3)
Single pulse avalanche energy 850 mJ
E
AS
T
stg
T
1. Current limited by wire bonding
2. Pulse width limited by safe operating area
3. Starting TJ = 25 °C, ID = 12 A, VDD =15 V
Storage temperature -55 to 175 °C
Max. operating junction temperature 175 °C
j

Table 3. Thermal data

Symbol Parameter
30 V
24 A
24 A
70 W
Max value
Unit
DPAK IPAK
R
thj-case
R
thj-amb
R
thj-pcb
T
l
1. When mounted on FR- 4board of 1 inch².
Thermal resistance junction-case max 2.14 °C/W
Thermal resistance junction-ambient max -- 100 °C/W
Thermal resistance junction-pcb max
50
(1)
-- °C/W
Maximum lead temperature for soldering purpose -- 275 °C/W
Note: For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed
2/13
Page 3
STD30PF03LT4 - STD30PF03L-1 Electrical characteristics

2 Electrical characteristics

(T
=25 °C unless otherwise specified)
CASE

Table 4. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit
V
V
R
(BR)DSS
I
DSS
I
GSS
GS(th)
DS(on)
Drain-source breakdown voltage
Zero gate voltage drain current (VGS = 0)
Gate body leakage current
= 0)
(V
DS
Gate threshold voltage
Static drain-source on resistance
= 250 µA, VGS= 0
I
D
V
=Max rating
DS
V
=Max rating,Tc=100 °C
DS
= ±16 V
V
GS
= VGS, ID = 250 µA
V
DS
= 10 V, ID= 12 A
V
GS
= 5 V, ID= 12 A
V
GS
30 V
1
10µAµA
±100 nA
1V
0.025
0.032
0.028
0.040ΩΩ

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
g
fs
C
C
C
Forward transconductance
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
=15 V, ID= 12 A
V
DS
V
=25 V, f=1MHz, VGS=0
DS
23 S
1670
345 120
pF pF pF
=15 V, ID = 24 A
Q
Q
Q
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Total gate charge
g
Gate-source charge
gs
Gate-drain charge
gd
V
DD
=5 V
V
GS
Figure 15
18.6
5.5 11
28 nC
nC nC
Note: For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed
3/13
Page 4
Electrical characteristics STD30PF03LT4 - STD30PF03L-1

Table 6. Switching times

Symbol Parameter Test conditions Min Typ Max Unit
t
d(on)
t
d(off)
Turn-on delay time
t
Rise time
r
Turn-off delay time Fall time
t
f
=25 V, ID=24 A,
V
DD
=4.7 Ω, VGS=5 V
R
G
Figure 14
64
122
36 26
ns ns ns ns

Table 7. Source drain diode

Symbol Parameter Test conditions Min Typ Max Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Source-drain current
(1)
Source-drain current (pulsed)
(2)
Forward on voltage ISD = 12 A, VGS=0 1.3 V
Reverse recovery time
rr
Reverse recovery charge
rr
Reverse recovery current
I V
Figure 16
=24 A, di/dt =100 A/µs,
SD
=50 V, Tj=150 °C
DD
40 52
2.6
2496A
A
ns
µC
A
Note: For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed
4/13
Page 5
STD30PF03LT4 - STD30PF03L-1 Electrical characteristics

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Transconductance Figure 7. Static drain-source on resistance
5/13
Page 6
Electrical characteristics STD30PF03LT4 - STD30PF03L-1
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 12. Source-drain diode forward
characteristics
Figure 11. Normalized on resistance vs
temperature
Figure 13. Normalized breakdown voltage vs
temperature
6/13
Page 7
STD30PF03LT4 - STD30PF03L-1 Test circuit

3 Test circuit

Figure 14. Switching times test circuit for
resistive load
Figure 16. Test circuit for diode recovery
behavior

Figure 15. Gate charge test circuit

7/13
Page 8
Package mechanical data STD30PF03LT4 - STD30PF03L-1

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
8/13
Page 9
STD30PF03LT4 - STD30PF03L-1 Package mechanical data
DPAK MECHANICAL DATA
DIM.
MIN. TYP MAX. MIN. T YP. MAX.
A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009
B 0.64 0.9 0.025 0.035 b4 5.2 5.4 0.204 0.212
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
D1 5.1 0.200
E 6.4 6.6 0.252 0.260
E1 4.7 0.185
e 2.28 0.090
e1 4.4 4.6 0.173 0.181
H 9.35 10.1 0.368 0.397
L 1 0.039
(L1) 2.8 0.110
L2 0.8 0.031 L4 0.6 1 0.023 0.039
R 0.2 0.008
V2 0° 8° 0° 8°
mm. inch
0068772-F
9/13
Page 10
Package mechanical data STD30PF03LT4 - STD30PF03L-1
TO-251 (IPAK) MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
H
C
A
C2
D
E
= =
L2
B2
= =
10/13
A1
L
B3
B6
B
2
1 3
L1
B5
A3
G
= =
0068771-E
Page 11
STD30PF03LT4 - STD30PF03L-1 Packaging mechanical data

5 Packaging mechanical data

DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22.4 0.881
mm inch
MIN. MAX. MIN. MAX.
TAPE MECHANICAL DATA
DIM.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D 1.5 1.6 0.059 0.063
D1 1.5 0.059
E 1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R 40 1.574
W 15.7 16.3 0.618 0.641
mm inch
MIN. MAX. MIN. MAX.
BASE QTY BULK QTY
2500 2500
11/13
Page 12
Revision history STD30PF03LT4 - STD30PF03L-1

6 Revision history

Table 8. Document revision history

Date Revision Changes
14-Jan-2008 2
– Document reformatted – Corrected marking on Table 1: Device summary
12/13
Page 13
STD30PF03LT4 - STD30PF03L-1
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