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Datasheet std2nk70z_std2nk70z-1 Datasheet

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Page 1
N-channel 700V - 6Ω - 1.6 A - DPAK/IPAK
3
Zener protected SuperMESH™ Power MOSFET
General features
Type V
STD2NK70Z 700V 7Ω 1.6A 45W
STD2NK70Z-1 700V 7Ω 1.6A 45W
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ New high voltage benchmark
■ Gate charge minimized
DSSRDS(on)
Description
I
D
Pw
DPAK
STD2NK70Z
STD2NK70Z-1
3
1
IPAK
2
1
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
Applications
■ Switching application
Order codes
Part number Marking Package Packaging
STD2NK70Z D2NK70Z D²PAK Tape & reel
STD2NK70Z-1 D2NK70Z IPAK Tube
Internal schematic diagram
July 2006 Rev 3 1/16
www.st.com
16
Page 2
Contents STD2NK70Z - STD2NK70Z-1
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
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Page 3
STD2NK70Z - STD2NK70Z-1 Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit
V
I
DM
V
DGR
V
I
I
P
DS
GS
D
D
(1)
tot
Drain-source voltage (VGS = 0) 700 V
Drain-gate voltage (RGS = 20 kΩ)700V
Gate- source voltage ± 30 V
Drain current (continuous) at TC = 25°C 1.6 A
Drain current (continuous) at TC = 100°C 1 A
Drain current (pulsed) 6.4 A
Total dissipation at TC = 25°C 45 W
Derating factor 0.36 W/°C
V
ESD(G-S)
(2)
dv/dt
T
stg
T
j
1. Pulse width limited by safe operating area.
2. ISD ≤1.6A, di/dt ≤200A/µs, VDD ≤ V
Gate source ESD (HBM-C = 100pF, R = 1.5 KΩ) 2000 V
Peak diode recovery voltage slope 4.5 V/ns
Storage temperature
55 to 150 °C
Max. operating junction temperature
, Tj ≤ T
(BR)DSS
JMAX

Table 2. Thermal data

Rthj-case Thermal resistance junction-case max 2.78 °C/W
Rthj-amb Thermal resistance junction-ambient max 100 °C/W
T
J
Maximum lead temperature for soldering purpose 300 °C

Table 3. Avalanche characteristics

Symbol Parameter Value Unit
I
AS
E
AS
Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max)
Single pulse avalanche energy (starting Tj=25°C, Id=Iar, Vdd=50V)
1.6 A
110 mJ
3/16
Page 4
Electrical ratings STD2NK70Z - STD2NK70Z-1

Table 4. Gate-source zener diode

Symbol Parameter Test Condition Min. Typ. Max Unit
BV
Gate-source
GSO
breakdown voltage
Igs= ± 1mA (open drain) 30 A

1.1 Protection features of gate-to-source zener diodes

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.
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STD2NK70Z - STD2NK70Z-1 Electrical characteristics

2 Electrical characteristics

(T
=25°C unless otherwise specified)
CASE

Table 5. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source breakdown voltage
Zero gate voltage drain current (VGS = 0)
Gate body leakage current
= 0)
(V
DS
Gate threshold voltage
Static drain-source on resistance
= 1mA, VGS= 0
I
D
V
= Max rating,
DS
V
= Max rating @125°C
DS
= ±20V
V
GS
= VGS, ID = 50µA
V
DS
VGS= 10V, ID= 0.8A
700 V
1
50
±10 nA
33.754.5 V
67Ω

Table 6. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
g
fs
C
C
C
C
oss eq
t
d(on)
t
d(off)
Q
Q
Q
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C inceases from 0 to 80% V
Forward transconductance
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
(2)
Equivalent output
.
capacitance
Turn-on delay time
t
Rise time
r
Turn-off delay time Fall time
t
f
g
Total gate charge Gate-source charge
gs
Gate-drain charge
gd
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
DSS
V
=15V, ID = 0.8A
DS
=25V, f=1 MHz,
V
DS
VGS=0
VGS=0, V
=350 V, ID= 0.8A,
V
DD
=4.7Ω, VGS=10V
R
G
=0V to 560V
DS
(see Figure 14)
=560V, ID = 0.8A
V
DD
=10V
V
GS
(see Figure 15)
1.4 S
280
35
6.5
17 pF
7 17 20 35
11.4 2
6.8
when VDS
oss
µA µA
pF pF pF
ns ns ns ns
nC nC nC
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Page 6
Electrical characteristics STD2NK70Z - STD2NK70Z-1

Table 7. Source drain diode

Symbol Parameter Test conditions Min Typ. Max Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
t
Q
I
RRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Source-drain current 1.6 A
(1)
Source-drain current (pulsed) 6.4 A
(2)
Forward on voltage
rr
Reverse recovery time Reverse recovery charge
rr
Reverse recovery current
rr
Reverse recovery time Reverse recovery charge
rr
Reverse recovery current
I
=1.6A, VGS=0
SD
=1.6A,
I
SD
di/dt = 100A/µs,
=50V, Tj=25°C
V
DD
(see Figure 16)
=1.6A,
I
SD
di/dt = 100A/µs,
= 50V, Tj=150°C
V
DD
(see Figure 16)
334 918
5.5
350
1050
6
1.6 V
ns
µC
A
ns
µC
A
6/16
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STD2NK70Z - STD2NK70Z-1 Electrical characteristics

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characterisics Figure 4. Transfer characteristics
Figure 5. Transconductance Figure 6. Static drain-source on resistance
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Page 8
Electrical characteristics STD2NK70Z - STD2NK70Z-1
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage
vs temperature
Figure 11. Source-drain diode forward
characteristics
Figure 10. Normalized on resistance vs
temperature
Figure 12. Normalized B
vs temperature
VDSS
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STD2NK70Z - STD2NK70Z-1 Electrical characteristics
Figure 13. Maximum avalanche energy vs
temperature
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Page 10
Test circuit STD2NK70Z - STD2NK70Z-1

3 Test circuit

Figure 14. Switching times test circuit for
resistive load
Figure 16. Test circuit for inductive load
switching and diode recovery times

Figure 15. Gate charge test circuit

Figure 17. Unclamped Inductive load test
circuit

Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform

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Page 11
STD2NK70Z - STD2NK70Z-1 Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Page 12
Package mechanical data STD2NK70Z - STD2NK70Z-1
TO-251 (IPAK) MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
H
C
A
C2
L2
E
B2
= =
= =
12/16
D
B3
2
1 3
L1
B6
A1
A3
L
B
B5
G
= =
0068771-E
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STD2NK70Z - STD2NK70Z-1 Package mechanical data
DPAK MECHANICAL DATA
DIM.
A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009
B 0.64 0 .9 0.025 0.035 b4 5.2 5.4 0.204 0.212
C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244 D1 5.1 0.200
E 6.4 6.6 0.252 0.260 E1 4.7 0.185
e 2.2 8 0.090
e1 4.4 4.6 0.173 0.181
H 9.35 10.1 0.368 0.397
L 1 0.039
(L1) 2.8 0.110
L2 0. 8 0.031 L4 0.6 1 0.023 0.039
R 0.2 0.008 V2 0° 8° 0° 8°
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
0068772-F
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Packaging mechanical data STD2NK70Z - STD2NK70Z-1

5 Packaging mechanical data

DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22.4 0.881
mm inch
MIN. MAX. MIN. MAX.
TAPE MECHANICAL DATA
DIM.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D 1.5 1.6 0.059 0.063
D1 1.5 0.059
E 1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R 40 1.574
W 15.7 16.3 0.618 0.641
mm inch
MIN. MAX. MIN. MAX.
14/16
BASE QTY BULK QTY
2500 2500
Page 15
STD2NK70Z - STD2NK70Z-1 Revision history

6 Revision history

Table 8. Revision history

Date Revision Changes
21-Jan-2005 1 First Release
10-Jun-2005 2 Updated Figure 1: Safe operating area
13-Jul-2006 3 New template, no content change
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STD2NK70Z - STD2NK70Z-1
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