Page 1
Low gate charge STripFET™ II Power MOSFET
Features
Type V
STD26NF10 100V < 0.038Ω 25A
DSS
R
DS(on)
STD26NF10
N-channel 100V - 0.033Ω - 25A - DPAK
I
D
■ Exceptional dv/dt capability
■ Application oriented characterization
■ 100% avalanche tested
■ Application oriented characterization
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is intended for
any application with low gate charge drive
requirements.
Applications
■ Switching application
– Automotive
3
1
DPAK
Internal schematic diagram
Order code
Part number Marking Package Packaging
STD26NF10 D26NF10 DPAK Tape & reel
April 2007 Rev 1 1/13
www.st.com
13
Page 2
Contents STD26NF10
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
Page 3
STD26NF10 Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
I
V
DGR
V
I
D
DM
P
I
DS
GS
(1)
D
(2)
tot
Drain-source voltage (VGS = 0) 100 V
Drain-gate voltage (RGS = 20 kΩ)100V
Gate- source voltage ± 20 V
Drain current (continuous) at TC = 25°C 25 A
Drain current (continuous) at TC = 100°C 21 A
Drain current (pulsed) 100 A
Total dissipation at TC = 25°C 100 W
Derating Factor 0.67 W/°C
(3)
dv/dt
(4)
E
AS
T
stg
T
j
1. Current limited by package
2. Pulse width limited by safe operating area.
3. ISD ≤ 35A, di/dt ≤ 300A/µs, VDD =V(
4. Starting Tj = 25 °C, ID = 12.5A VDD = 50V
Peak diode recovery avalanche energy 13 V/ns
Single pulse avalanche energy 480 mJ
Storage temperature
-55 to 175 °C
Max. operating junction temperature
, Tj ≤ T
BR)DSS
JMAX
Table 2. Thermal data
Rthj-case Thermal resistance junction-case max 1.5 °C/W
Rthj-amb Thermal resistance junction-to ambient max 100 °C/W
T
J
Maximum lead temperature for soldering purpose 300 °C
3/13
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Electrical characteristics STD26NF10
2 Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 3. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
GS
Gate-body leakage
current (V
DS
= 0)
= 0)
ID = 250µA, VGS =0 100 V
V
= Max rating
DS
VDS = Max rating,
= 125°C
T
C
1
10
VGS = ± 20V ±100 nA
Gate threshold voltage VDS = VGS, ID = 250µA 2 3 4 V
Static drain-source on
resistance
V
= 10V, ID = 12.5A 0.033 0.038 Ω
GS
Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Forward
(1)
g
fs
C
C
C
t
d(on)
t
t
d(off)
t
Q
Q
Q
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
transconductance
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
Turn-on delay time
Rise time
r
Turn-off delay time
Fall time
f
Total gate charge
g
Gate-source charge
gs
Gate-drain charge
gd
= 15V, ID= 12.5A 20 S
V
DS
= 25V, f = 1MHz,
V
DS
= 0
V
GS
= 50V, ID = 12.5A
V
DD
RG=4.7Ω VGS = 10V
(see Figure 12)
VDD = 80V, ID = 12.5A,
VGS = 10V, RG=4.7Ω
(see Figure 13)
1550
220
95
17
60
60
15
55
12
20
µA
µA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
4/13
Page 5
STD26NF10 Electrical characteristics
Table 5. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Source-drain current
Source-drain current
(1)
(pulsed)
(2)
Forward on voltage ISD = 25A, VGS = 0 1.5 V
Reverse recovery time
rr
Reverse recovery charge
rr
Reverse recovery current
ISD = 25A, di/dt = 100A/µs,
VDD = 50V, Tj = 150°C
(see Figure 14)
88
317
7.2
25
100
A
A
ns
nC
A
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Electrical characteristics STD26NF10
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characteristics Figure 4. Transfer characteristics
Figure 5. Transconductance Figure 6. Static drain-source on resistance
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STD26NF10 Electrical characteristics
Figure 7. Gate charge vs. gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage
vs. temperature
Figure 11. Source-drain diode forward
characteristics
Figure 10. Normalized on resistance vs.
temperature
7/13
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Test circuit STD26NF10
3 Test circuit
Figure 12. Switching times test circuit for
resistive load
Figure 14. Test circuit for inductive load
switching and diode recovery times
Figure 13. Gate charge test circuit
Figure 15. Unclamped Inductive load test
circuit
Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform
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STD26NF10 Package mechanical data
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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Package mechanical data STD26NF10
DPAK MECHANICAL DATA
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.9 0.025 0.035
b4 5.2 5.4 0.204 0.212
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
D1 5.1 0.200
E 6.4 6.6 0.252 0.260
E1 4.7 0.185
e 2.28 0.090
e1 4.4 4.6 0.173 0.181
H 9.35 10.1 0.368 0.397
L 1 0.039
(L1) 2.8 0.110
L2 0.8 0.031
L4 0.6 1 0.023 0.039
R 0.2 0.008
V2 0° 8° 0° 8°
mm. inch
10/13
0068772-F
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STD26NF10 Packing mechanical data
5 Packing mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
TAPE MECHANICAL DATA
DIM.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D 1.5 1.6 0.059 0.063
D1 1.5 0.059
E 1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R 40 1.574
W 15.7 16.3 0.618 0.641
mm inch
MIN. MAX. MIN. MAX.
REEL MECHANICAL DATA
DIM.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0.795
G 16.4 18.4 0.645 0.724
N 50 1.968
T 22.4 0.881
BASE QTY BULK QTY
mm inch
MIN. MAX. MIN. MAX.
2500 2500
11/13
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Revision history STD26NF10
6 Revision history
Table 6. Revision history
Date Revision Changes
20-Apr-2007 1 First release
12/13
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STD26NF10
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