Page 1
STD1NB80-1
N - CHANNEL 800V - 16Ω - 1A - IPAK
PowerMESH MOSFET
PRELIMINARY DATA
TYPE V
DSS
R
DS(on)
I
D
STD1NB80-1 800 V < 20 Ω 1 A
■
TYPICAL R
■
EXTREMELY HIGH dv/dt CAPABILITY
■
100% AVALANCHE TESTED
■
VERY LOW INTRINSIC CAPACITANCES
■
GATE CHARGE MINIMIZED
DS(on)
= 16
Ω
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
per area, exceptional avalanche
DS(on)
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
■
SWITCH MODE POWER SUPPLIES (SMPS)
■
AC ADAPTORS AND BATTE RY CHA RGE RS
FOR HANDHELD EQUIPMENT
3
2
1
IPAK
TO-251
(Suffix "-1")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/dt(
T
(•) Pulse width limited by safe operating area (1) ISD
September 1998
Drain-source Voltage (VGS = 0) 800 V
DS
Drain- gate Voltage (RGS = 20 kΩ)
DGR
Gate-source Voltage ± 30 V
GS
I
Drain Current (continuous) at Tc = 25 oC1A
D
I
Drain Current (continuous) at Tc = 100 oC 0.63 A
D
800 V
(•) Drain Current (pulsed) 4 A
Total Dissipation at Tc = 25 oC50W
tot
Derating Factor 0.4 W/
) Peak Diode Recovery voltage slope 4.5 V/ns
1
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
≤ 1Α,
di/dt ≤ 200 A/µs, VDD ≤ V
(BR)DSS
, Tj ≤ T
JMAX
o
C
o
C
o
C
1/5
Page 2
STD1NB80-1
THERMAL DATA
R
thj-case
Rthj-am b
Rthc-sink
T
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-Sink Typ
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERIST ICS
Symbol Parameter Max Value Unit
I
AR
E
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
max)
j
DD
= 50 V)
2.5
100
1.5
275
1A
90 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
= 25 oC unless otherwise specified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 250 µA V
D
GS
= 0
800 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 125 oC
DS
V
= ± 30 V
GS
1
50
± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
= VGS ID = 250 µA
DS
345V
Voltage
R
DS(on)
Static Drain-source On
VGS = 10V ID =0.5 A 16 20 Ω
Resistance
I
D(on)
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
1A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗) Forward
fs
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 0.5 A 0.3 0.6 S
= 0 140
GS
22
2.5
185
27
4
µA
µA
pF
pF
pF
2/5
Page 3
STD1NB8 0-1
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
Turn-on Time
t
Rise Time
r
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
V
= 400 V ID = 0.5A
DD
= 4.7 Ω VGS = 10 V
R
G
V
= 640 V ID =1.1 A V
DD
= 10 V 10
GS
8
10
5
4
12
14
14 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off-voltage Rise Time
Fall Time
f
Cross-over Time
c
V
= 640 V ID = 1.1 A
DD
= 4.7 Ω VGS = 10 V
R
G
40
15
50
56
21
70
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
1
4
I
SDM
I
SD
Source-drain Current
(•)
Source-drain Current
(pulsed)
V
(∗) Forward On Voltage ISD = 1 A VGS = 0 1.6 V
SD
t
Q
Reverse Recovery
rr
Time
Reverse Recovery
rr
I
= 1.1 A di/dt = 100 A/µs
SD
V
= 100 V Tj = 150 oC
DD
460
1150
Charge
I
RRM
Reverse Recovery
5
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
ns
ns
nC
nC
ns
ns
ns
A
A
ns
nC
A
3/5
Page 4
STD1NB80-1
TO-251 (IPAK) MECHANI CAL DAT A
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
4/5
A
C2
L2
E
B2
= =
= =
H
C
A3
A1
B6
L
B
B5
G
= =
D
B3
2
1 3
L1
0068771-E
Page 5
STD1NB8 0-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any in fringe ment o f patents or other rig hts of third par ties wh ich may result from its u se. N o li cen se is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized f or use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1998 STMicroelectro nics – Printed in Italy – All Rights Reserved
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5/5
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