Page 1
®
STD1NB60
N - CHANNEL 600V - 7.4Ω - 1A - IPAK/DPAK
PowerMESH MOSFET
PRELIMINARY DATA
TYPE V
STD1NB60 600 V < 8.5 Ω 1 A
■
TYPICAL R
■
EXTREMELY HIGH dv/dt CAPABILITY
■
100% AVALANCHE TESTED
■
VERY LOW INTRINSIC CAPACITANCES
■
GATE CHARGE MINIMIZED
DS(on)
DSS
= 7.4
R
DS(on)
I
D
Ω
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
per area, exceptional avalanche
DS(on)
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
■
SWITCH MODE POWER SUPP LIES (SMPS)
■
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTI BLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
IPAK
TO-251
(Suffix "-1")
1
(Suffix "T4")
1
DPAK
TO-252
INTERNAL SCHEMATIC DIAGRAM
3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/dt(
T
(•) Pulse width limited by safe operating area (1) ISD
November 1999
Drain-source Voltage (VGS = 0) 600 V
DS
Drain- gate Voltage (RGS = 20 kΩ)
DGR
Gate-source Voltage
GS
I
Drain Current (continuous) at Tc = 25 oC1A
D
I
Drain Current (continuous) at Tc = 100 oC 0.63 A
D
(•) Drain Current (pulsed) 4 A
Total Dissipation at Tc = 25 oC45W
tot
Derating Factor 0.36 W/
) Peak Diode Recovery voltage slope 3.5 V/ns
1
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
di/dt â 200 A/µs, VDD ≤ V
≤1 Α,
600 V
30 V
±
, Tj ≤ T
(BR)DSS
JMAX
o
C
o
C
o
C
1/6
Page 2
STD1NB60
THERMAL DATA
R
thj-case
Rthj-am b
R
thc-sink
T
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERIST ICS
Symbol Parameter Max Value Unit
I
AR
E
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
max)
j
DD
= 50 V)
2.78
100
1.5
275
1A
150 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
= 25 oC unless otherwise specified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 250 µA V
D
GS
= 0
600 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 125 oC
DS
V
= ± 30 V
GS
1
10
± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
= VGS ID = 250 µA
DS
345V
Voltage
R
DS(on)
Static Drain-source On
VGS = 10V ID =0.6 A 7.4 8.5 Ω
Resistance
I
D(on)
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
1A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗) Forward
fs
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 1 A 0.97 S
= 0 180
GS
32
3.5
µA
µA
pF
pF
pF
2/6
Page 3
STD1NB60
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on Time
r
Rise Time
t
V
= 300 V ID = 0.5 A
DD
= 4.7 Ω VGS = 10 V
R
G
13
15
ns
ns
Q
Q
Q
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain Charge
gd
VDD = 480 V ID = 1 A V
= 10 V 7
GS
10 nC
2
3.5
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off-voltage Rise Time
Fall Time
f
Cross-over Time
c
V
= 480 V ID = 1 A
DD
= 4.7 Ω VGS = 10 V
R
G
27
32
35
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
1
4
I
SDM
I
SD
Source-drain Current
(•)
Source-drain Current
(pulsed)
V
(∗) Forward On Voltage ISD = 1 A VGS = 0 1.6 V
SD
t
Q
Reverse Recovery
rr
Time
Reverse Recovery
rr
I
= 1 A di/dt = 100 A/µs
SD
V
= 100 V Tj = 150 oC
DD
350
825
Charge
I
RRM
Reverse Recovery
4.7
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
nC
nC
ns
ns
ns
A
A
ns
nC
A
3/6
Page 4
STD1NB60
TO-251 (IPAK) MECHANI CAL DAT A
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
4/6
A
C2
L2
E
B2
= =
= =
H
C
A3
A1
B6
L
B
B5
G
= =
D
B3
2
1 3
L1
0068771-E
Page 5
TO-252 (DPAK) MECHANICAL DAT A
0068772-B
STD1NB60
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 9.35 10.1 0.368 0.397
L2 0.8 0.031
L4 0.6 1 0.023 0.039
H
A
C2
L2
E
B2
==
DETAIL "A"
D
==
C
B
2
1 3
L4
A1
G
==
A2
DETAIL "A"
5/6
Page 6
STD1NB60
Information f urnished i s believed t o be accurate an d reliabl e. How ever, STMicroelect ronics assu mes no responsib ility fo r the consequen ces
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to chan ge w ithout notice. This publicatio n su persedes a nd r eplaces al l inf ormati on previ ously suppl ied. STMicroelect ron ics produ cts
are not auth ori zed f or use as critical component s in life support devices or systems without express written ap proval o f STM icroelectronics.
The ST logo is a trademark of STMicroelectronics
© 1999 STMicroelectronic s – Printed in Italy – Al l Rights Rese rved
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