Datasheet std100n3lf3 Datasheet

Features

Type V

STD100N3LF3 30 V <0.0055 Ω 80 A

1. Current limited by package

DSSSRDS(on)

STD100N3LF3

N-channel 30 V, 0.0045 Ω, 80 A, DPAK

planar STripFET™ II Power MOSFET

I

Pw

D

(1)

110 W

3

1

■ 100% avalanche tested

■ Logic level threshold

Applications

■ Switching application

– Automotive

Description

This STripFET™ II Power MOSFET technology is
among the latest improvements, which have been
especially tailored to minimize on-state resistance
providing superior switching performance.

Table 1. Device summary

DPAK

Figure 1. Internal schematic diagram

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Order codes Marking Package Packaging

STD100N3LF3 100N3LF3 DPAK Tape and reel

November 2009 Doc ID 13206 Rev 3 1/14

www.st.com

14

Contents STD100N3LF3

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

2/14 Doc ID 13206 Rev 3

STD100N3LF3 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

I

V

V

I

DM

P

Drain-source voltage (VGS = 0) 30 V

DS

Gate-source voltage ± 20 V

GS

(1)

Drain current (continuous) at TC = 25 °C 80 A

D

I

Drain current (continuous) at TC=100 °C 70 A

D

(2)

Drain current (pulsed) 320 A

Total dissipation at TC = 25 °C 110 W

TOT

Derating factor 0.73 W/°C

(3)

dv/dt

T

Peak diode recovery voltage slope 3.9 V/ns

Storage temperature

stg

Max. operating junction temperature

T

J

-55 to 175 °C

1. Current limited by package.

2. Pulse width limited by safe operating area

3. I

≤ 80A, di/dt ≤ 360 A/µs, V

SD

DS

≤ V

(BR)DSS

, TJ ≤ T

JMAX

Table 3. Thermal data

Symbol Parameter Value Unit

R

R

Thermal resistance junction-case max 1.36 °C/W

thJC

Thermal resistance junction-ambient max 100 °C/W

thJA

Maximum lead temperature for soldering

T

l

purpose

275 °C

Table 4. Avalanche characteristics

Symbol Parameter Value Unit

Not-repetitive avalanche current

I

AR

(pulse width limited by T

E

Single pulsed avalanche energy

AS

(starting T

= 25 °C, ID = I

J

max)

J

AV, VDD

= 24 V)

Doc ID 13206 Rev 3 3/14

40 A

500 mJ

Electrical characteristics STD100N3LF3

2 Electrical characteristics

(T

=25°C unless otherwise specified)

CASE

Table 5. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source breakdown
voltage

Zero gate voltage drain
current (VGS = 0)

Gate body leakage current

= 0)

(V

DS

= 250 µA, V

I

D

= Max rating,

V

DS

= Max rating @125 °C

V

DS

V

= ±20 V ±200 nA

GS

= 0 30 V

GS

1

10

Gate threshold voltage VDS= VGS, ID = 250 µA 1 2.5 V

Static drain-source on
resistance

V

= 10 V, ID = 40 A

GS

= 5 V, ID = 20 A

V

GS

= 10 V,

V

GS

= 40 A @125 °C

I

D

V

= 5 V,

GS

= 20 A @125 °C

I

D

0.0045

0.008

0.0068

0.0146

0.0055

0.01ΩΩ

Table 6. Dynamic

µA
µA

Ω

Ω

Symbol Parameter Test conditions Min. Typ. Max. Unit

(1)

g

fs

C

C

C

Q
Q
Q

Forward transconductance VDS = 10 V, ID = 15 A - 31 S

Input capacitance

iss

Output capacitance

oss

Reverse transfer

rss

capacitance

Total gate charge

g

Gate-source charge

gs

Gate-drain charge

gd

= 25 V, f = 1 MHz,

V

DS

= 0

V

GS

= 24 V, ID = 80 A

V

DD

= 5 V

V

GS

Figure 16 on page 9

2060

-

728

67

20

-

7

7.5

pF
pF
pF

27 nC

nC
nC

f = 1 MHz gate DC Bias = 0

R

Gate input resistance

G

test signal level = 20 mV

-1.9 Ω

open drain

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

4/14 Doc ID 13206 Rev 3

STD100N3LF3 Electrical characteristics

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

t

d(on)

t

d(off)

Turn-on delay time

t

Rise time

r

Turn-off delay time

t

Fall time

f

= 15 V, ID= 40 A,

V

DD

=4.7Ω, VGS=10 V

R

G

Figure 15 on page 9

-

9

205

31
35

-

Table 8. Source drain diode

Symbol Parameter Test conditions Min Typ. Max Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Source-drain current - 80 A

(1)

Source-drain current (pulsed) - 320 A

(2)

Forward on voltage I

Reverse recovery time

rr

Reverse recovery charge

rr

Reverse recovery current

= 40 A, V

SD

= 80 A,

I

SD

= 0 - 1.3 V

GS

di/dt = 100 A/µs,

= 25 V, TJ = 150 °C

V

DD

Figure 17 on page 9

40

-

40

2

ns
ns
ns
ns

ns

µC

A

Doc ID 13206 Rev 3 5/14

Electrical characteristics STD100N3LF3

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance

Figure 4. Output characteristics Figure 5. Transfer characteristics

Figure 6. Transconductance Figure 7. Static drain-source on resistance

6/14 Doc ID 13206 Rev 3

STD100N3LF3 Electrical characteristics

Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations

Figure 10. Normalized gate threshold voltage

vs temperature

Figure 12. Normalized on resistance vs

temperature

Figure 11. Normalized BV

vs temperature

DSS

Figure 13. Source-drain diode forward

characteristics

Doc ID 13206 Rev 3 7/14

Electrical characteristics STD100N3LF3

Figure 14. Allowable Iav vs time in avalanche

The previous curve gives the single pulse safe operating area for unclamped inductive
loads, under the following conditions:

P

E

= 0.5 * (1.3 * BV

D(AVE)

= P

AS(AR)

D(AVE)

* t

AV

DSS

*IAV)

Where:

I

is the allowable current in avalanche

AV

P

t

AV

is the average power dissipation in avalanche (single pulse)

D(AVE)

is the time in avalanche

8/14 Doc ID 13206 Rev 3

STD100N3LF3 Test circuits

3 Test circuits

Figure 15. Switching times test circuit for

resistive load

Figure 17. Test circuit for inductive load

switching and diode recovery times

Figure 16. Gate charge test circuit

Doc ID 13206 Rev 3 9/14

Package mechanical data STD100N3LF3

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK

®

packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.

10/14 Doc ID 13206 Rev 3

STD100N3LF3 Package mechanical data

DIM.

mm.

min. typ max.

A 2.20 2.40

A1 0.901.10

A2 0.03 0.23

b 0.64 0.90

b4 5.20 5.40

c 0.45 0.60

c2 0.48 0.60

D 6.00 6.20

D1 5.10

E 6.40 6.60

E1 4.70

e2.28

e1 4.40 4.60

H 9.35 10.10

L1

L1 2.80

L2 0.80

L4 0.60 1

R0.20

V2 0

o

8

o

TO-252 (DPAK) mechanical data

0068772_G

Doc ID 13206 Rev 3 11/14

Packaging mechanical data STD100N3LF3

5 Packaging mechanical data

DPAK FOOTPRINT

All dimensions are in millimeters

TAPE AND REEL SHIPMENT

REEL MECHANICAL DATA

DIM.

A 330 12.992

B 1.5 0.059

C 12.8 13.2 0.504 0.520

D 20.2 0.795

G 16.4 18.4 0.645 0.724

N 50 1.968

T 22.4 0.881

TAPE MECHANICAL DATA

DIM.

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

A0 6.8 7 0.267 0.275

B0 10.4 10.6 0.409 0.417

B1 12.1 0.476

D 1.5 1.6 0.059 0.063

D1 1.5 0.059

E 1.65 1.85 0.065 0.073

F 7.4 7.6 0.291 0.299

K0 2.55 2.75 0.100 0.108

P0 3.9 4.1 0.153 0.161

P1 7.9 8.1 0.311 0.319

P2 1.9 2.1 0.075 0.082

R 40 1.574

W 15.7 16.3 0.618 0.641

mm inch

MIN. MAX. MIN. MAX.

2500 2500

12/14 Doc ID 13206 Rev 3

STD100N3LF3 Revision history

6 Revision history

Table 9. Document revision history

Date Revision Changes

07-Feb-2006 1 Initial release.

07-May-2009 2 Added V

09-Nov-2009 3 Added V

max value in Table 5: On/off states

GS(th)

parameter in Table 2: Absolute maximum ratings

GS

Doc ID 13206 Rev 3 13/14

STD100N3LF3

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14/14 Doc ID 13206 Rev 3