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N-channel 30V - 0.027Ω - 5A - TSSOP8
Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)
2.7V-drive STripFET™ II Power MOSFET
General features
Typ e V
STC5NF30V 30V
■ Ultra low threshold gate drive (2.7V)
■ Standard outline for easy automated surface
mount assembly
DSS
Description
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
R
DS(on)
< 0.031 Ω ( @ 4.5 V )
< 0.035 Ω ( @ 2.7 V )
I
5A
D
STC5NF30V
TSSOP8
Internal schematic diagram
Applications
■ Switching application
Order codes
Part number Marking Package Packaging
STC5NF30V C5NF30V TSSOP8
August 2006 Rev 2 1/12
www.st.com
12
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Contents STC5NF30V
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STC5NF30V Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
V
V
I
DM
P
T
1. Pulse width limited by safe operating area
Drain-source voltage (VGS = 0) 30 V
DS
Drain-gate voltage (RGS = 20KΩ)20V
DGR
Gate-source voltage ± 12 V
GS
I
Drain current (continuous) at TC = 25°C 5 A
D
Drain current (continuous) at TC=100°C 3 A
I
D
(1)
Drain current (pulsed) 20 A
Total dissipation at TC = 25°C 1.5 W
TOT
Storage temperature –55 to 150 °C
stg
T
Max. operating junction temperature –55 to 150 °C
J
Table 2. Thermal data
Symbol Parameter Value Unit
R
thJ-PBC
R
thJ-PBC
1. When Mounted on FR-4 board with 1 inch2 pad, 2 oz of Cu and t = 10 sec
2. When Mounted on minimum recommended footprint
Thermal resistance junction-PBC Max 100
Thermal resistance junction-PBC Max 83.5
(1)
(2)
°C/W
°C/W
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Electrical characteristics STC5NF30V
2 Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 3. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Drain-source breakdown
voltage
Zero gate voltage drain
current (VGS = 0)
Gate body leakage current
= 0)
(V
DS
Gate threshold voltage
Static drain-source on
resistance
= 250µA, VGS= 0
I
D
V
= Max rating,
DS
V
= Max rating @125°C
DS
= ±12V
V
GS
= VGS, ID = 250µA
V
DS
VGS= 4.5V, ID= 2.5A
=2.7V, ID = 2.5A
V
GS
30 V
1
10
±100 nA
0.6 V
0.027
0.031
0.031
0.035ΩΩ
Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
g
fs
C
C
C
Q
Q
Q
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance V
Input capacitance
iss
Output capacitance
oss
Reverse transfer
rss
capacitance
g
Total gate charge
Gate-source charge
gs
Gate-drain charge
gd
= 15 V, ID = 2.5A 9.5 S
DS
=15V, f = 1 MHz,
V
DS
= 0
V
GS
=16V, ID = 4.5A
V
DD
=4.5V
V
GS
Figure 15 on page 8
460
200
50
8.5
1.8
2.4
11.5 nC
µA
µA
pF
pF
pF
nC
nC
Table 5. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
d(off)
t
d(off)
Turn-on delay time
t
Rise time
r
Turn-off delay time
Fall time
t
f
Off-voltage rise time
t
Fall time
f
t
Cross-over time
c
= 10V, ID= 2.5A,
V
DD
=4.7Ω, VGS=4.5V
R
G
Figure 13 on page 8
GS
= 5A
D
= 4.5V
Vclamp =16V, I
= 4.7Ω, V
R
G
Figure 15 on page 8
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33
27
10
26
11
21
7
ns
ns
ns
ns
ns
ns
ns
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STC5NF30V Electrical characteristics
Table 6. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Source-drain current 5 A
(1)
Source-drain current (pulsed) 20 A
(2)
Forward on voltage
Reverse recovery time
rr
Reverse recovery charge
rr
Reverse recovery current
I
I
SD
SD
= 5A, V
= 5A,
GS
= 0
di/dt = 100A/µs,
= 10V, TJ = 150°C
V
DD
Figure 15 on page 8
26
13
1
1.2 V
ns
µC
A
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Electrical characteristics STC5NF30V
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characteristics Figure 4. Transfer characteristics
Figure 5. Transconductance Figure 6. Static drain-source on resistance
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STC5NF30V Electrical characteristics
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage
vs temperature
Figure 11. Source-drain diode forward
characteristics
Figure 10. Normalized on resistance vs
temperature
Figure 12. Thermal resistance and max power
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Test circuit STC5NF30V
3 Test circuit
Figure 13. Switching times test circuit for
resistive load
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 14. Gate charge test circuit
Figure 16. Unclamped Inductive load test
circuit
Figure 17. Unclamped inductive waveform
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STC5NF30V Package mechanical data
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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Package mechanical data STC5NF30V
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STC5NF30V Revision history
5 Revision history
Table 7. Revision history
Date Revision Changes
09-Sep-2004 1 First release
08-Aug-2006 2 New template, SOA updated
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STC5NF30V
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