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High voltage fast-switching NPN power transistor
Features
■ High voltage capability
■ Low spread of dynamic parameters
■ Very high switching speed
■ Integrated free-wheeling diode
Application
STBV42D
Preliminary data
■ Compact fluorescent lamps (CFLs)
Description
The device is manufactured using high voltage
multi epitaxial planar technology for high switching
speeds and high voltage capability. It uses a
cellular emitter structure with planar edge
termination to enhance switching speeds while
maintaining the wide RBSOA.
TO-92
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code Marking Package Packaging
STBV42D BV42D TO-92 BAG
April 2010 Doc ID 17236 Rev 2 1/8
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
www.st.com
8
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Electrical ratings STBV42D
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CES
V
CEO
V
EBO
I
I
CM
I
I
BM
P
TOT
T
STG
T
Table 3. Thermal data
Collector-emitter voltage (VBE = 0) 700 V
Collector-emitter voltage (IB = 0) 400 V
Collector-base voltage (IC = 0) 9 V
Collector current 1 A
C
Collector peak current (tP < 5 ms) 2 A
Base current 0.5 A
B
Base peak current (tP < 5 ms) 1 A
Total dissipation at Tc = 25 °C 1 W
Storage temperature - 65 to 150
Max. operating junction temperature 150
J
Symbol Parameter Value Unit
R
thJC
Thermal resistance junction-case 125 °C/W
°C
2/8 Doc ID 17236 Rev 2
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STBV42D Electrical characteristics
2 Electrical characteristics
T
= 25 °C; unless otherwise specified.
case
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CES
I
EBO
V
CEO(sus)
(1)
V
CE(sat)
V
BE(sat)
h
FE
Collector cut-off current
= 0)
(V
BE
Emitter cut-off current
= 0)
(I
C
Collector-emitter sustaining
voltage (IB = 0)
Collector-emitter saturation
(1)
voltage
Base-emitter saturation
(1)
voltage
(1)
DC current gain
V
CE
V
CE
V
EB
I
= 1 mA 400 V
C
= 0.25 A IB = 50 mA
I
C
IC = 0.5 A IB = 125 mA
= 0.75 A IB = 250 mA
I
C
= 0.25 A IB = 50 mA
I
C
IC = 0.5 A IB = 125 mA
I
= 5 mA, V
C
= 0.4 A, V
I
C
IC = 0.8 A V
= 0.25 A _ V
I
t
V
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %
Inductive Load
f
Fall tim e
Diode forward voltage IF = 350 mA 1.7 V
F
C
I
B(on)
L = 3 mH Figure 2
= 700 V
= 700 V TC = 125 °C
15mA
mA
= 9 V 1 mA
0.2
0.5
V
0.3
0.4
1
1.5
V
V
1
1.2VV
12
10
5
0.3 µs
30
20
= -I
B(off)
CE
CE
CE
clamp
= 50 mA
= 2 V
= 5 V
= 5 V
= 300 V
Doc ID 17236 Rev 2 3/8
Page 4
Electrical characteristics STBV42D
2.1 Test circuit
Figure 2. Inductive load switching test circuit
1. Fast electronic switch
2. Non-inductive resistor
3. Fast recovery rectifier
4/8 Doc ID 17236 Rev 2
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STBV42D Package mechanical data
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
Doc ID 17236 Rev 2 5/8
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Package mechanical data STBV42D
TO-92 bulk shipment mechanical data
DIM.
mm.
MIN. TYP MAX.
A4.32 4.95
b 0.36 0.51
D 4.45 4.95
E 3 .30 3.94
e 2.41 2.67
e1 1.14 1.40
L 12.70 15.49
R 2.16 2.41
S1 0.92 1.52
W 0.41 0.56
V5
o
6/8 Doc ID 17236 Rev 2
0102782 D
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STBV42D Revision history
4 Revision history
Table 5. Document revision history
Date Revision Changes
08-Mar-2010 1 First release.
28-Apr-2010 2 Inserted VF maximum value Table 4 on page 3.
Doc ID 17236 Rev 2 7/8
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STBV42D
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