Datasheet stb95n4lf3_std95n4lf3 Datasheet

N-channel 40 V, 5.0 mΩ, 80 A DPAK, D2PA K

Features

R

Type V

DSS

DS(on)

max

STD95N4LF3 40 V < 6.0 mΩ 80 A

(2)

STB95N4LF3

1. Value limited by wire bonding

2. All data which refers solely to the D²PAK package is
preliminary

■ 100% avalanche tested

■ Logic level drive

40 V < 6.0 mΩ 80 A 110 W

Applications

I

D

(1)

110 W

STB95N4LF3
STD95N4LF3

STripFET™ III Power MOSFET

P

D

D²PAK

3

1

3

1

DPAK

■ Switching application

– Automotive

Description

This STripFET™ III Power MOSFET technology is
among the latest improvements, which have been
especially tailored to minimize on-state resistance
providing superior switching performance.

Table 1. Device summary

Order codes Marking Package Packaging

STD95N4LF3 95N4LF3 DPAK Tape and reel

STB95N4LF3 95N4LF3 D²PAK Tape and reel

Figure 1. Internal schematic diagram

D (TAB or 2)

G(1)

S(3)

AM01474v1

July 2009 Doc ID 15372 Rev 2 1/16

www.st.com

16

Contents STD95N4LF3

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

2/16 Doc ID 15372 Rev 2

STD95N4LF3 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

I

V

V

I

D

DM

P

I

TOT

Drain-source voltage (VGS = 0) 40 V

DS

Gate-source voltage ± 16 V

GS

(1)

Drain current (continuous) at TC = 25 °C 80 A

Drain current (continuous) at TC = 100 °C 65 A

D

(2)

Drain current (pulsed) 320 A

Total dissipation at TC = 25 °C 110 W

Derating factor 0.73 W/°C

(3)

dv/dt

E

AS

T

T

Peak diode recovery voltage slope 8 V/ns

(4)

Single pulse avalanche energy 400 mJ

Operating junction temperature

j

Storage temperature

stg

-55 to 175 °C

1. Value limited by wire bonding

2. Pulse width limited by safe operating area

3. ISD ≤ 80 A, di/dt ≤ 40 A/µs, V

DS

≤ V

(BR)DSS

, TJ ≤ T

JMAX

4. Starting TJ = 25 °C, ID = 40 A, VDD = 35 V Figure 16 and Figure 17

Table 3. Thermal data

Symbol Parameter Value Unit

R

R

thj-pcb

thj-case

Thermal resistance junction-case max 1.36 °C/W

(1)

Thermal resistance junction-pcb max 50 °C/W

1. When mounted on 1inch² FR-4 2Oz Cu board

Doc ID 15372 Rev 2 3/16

Electrical characteristics STD95N4LF3

2 Electrical characteristics

(T

= 25 °C unless otherwise specified)

CASE

Table 4. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Drain-source
breakdown voltage

Zero gate voltage
drain current (VGS = 0)

Gate-body leakage
current (VDS = 0)

ID = 250 µA, VGS =0 40 V

VDS = max rating
VDS = max rating @125 °C

10

100µAµA

VGS = ± 16 V ±200 nA

Gate threshold voltage VDS = VGS, ID = 250 µA 1 2.5 V

Static drain-source on
resistance

= 10 V, ID = 40 A

V

GS

= 5 V, ID = 40 A

V

GS

5.0 6.0

9.0mΩmΩ

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Forward

(1)

g

fs

transconductance

V

= 25 V, ID= 40 A - 150 S

DS

C

C

C

t

d(on)

t

d(off)

Q
Q
Q

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.

Input capacitance

iss

Output capacitance

oss

Reverse transfer

rss

capacitance

Turn-on delay time

t

Rise time

r

Turn-off delay time

t

Fall time

f

Total gate charge

g

Gate-source charge

gs

Gate-drain charge

gd

= 25 V, f = 1 MHz,

V

DS

VGS = 0

= 20 V, ID = 40 A

V

DD

=4.7 Ω VGS = 10 V

R

G

(see Figure 13 and

Figure 18)

= 20 V, ID = 80 A,

V

DD

VGS = 10 V (see

Figure 14)

2500

-

560

50

7.5

-

45
45
11

50

-

7

70 nC

9.5

pF
pF
pF

ns
ns
ns
ns

nC
nC

4/16 Doc ID 15372 Rev 2

STD95N4LF3 Electrical characteristics

Table 6. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

Source-drain current
Source-drain current

(1)

(pulsed)

(2)

Forward on voltage ISD = 80 A, VGS = 0 - 1.5 V

= 80 A, di/dt = 100 A/µs,

I

Reverse recovery time

rr

Reverse recovery charge

rr

Reverse recovery current

SD

VDD = 20 V, Tj = 150 °C
(see Figure 15 and

Figure 19)

I

SDM

V

I

SD

Q

I

RRM

SD

t

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

3

80

320AA

ns

nC

A

-

40

-

55

Doc ID 15372 Rev 2 5/16

Electrical characteristics STD95N4LF3

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance

I

D

(A)

AM01528v1

100

DS(on)

Operation in this area is

10

Limited by max R

100µs

1ms

10ms

1

J

=175°C

T

C

=25°C

T

Single

0.1

0.1

Figure 4. Output characteristics Figure 5. Transfer characteristics

1

10

ID

(A)

VGS=10V

300

250

200

150

100

50

V

4V

DS

pulse

(V)

AM01529v1

3V

ID

(A)

300

250

200

150

100

50

VDS=10V

AM01530v1

0

1

0

Figure 6. Static drain-source on resistance Figure 7. Normalized B

RDS(on)

3

2

4

6

5

8

9

V

7

DS(V)

AM01532v1

(mΩ)

6.6

VGS=5V

6.4

BV

DSS

(norm)

1.1

0

0

6.2

6.0

1.0

5.8

5.6

5.4

5.2

5.0
I

20

10

30

40

50

60

70

0

80

D(A)

0.9

0.8

-50

6/16 Doc ID 15372 Rev 2

2

4

6

VDSS

50

0

8

V

GS(V)

vs temperature

AM01531v1

T

J

(°C)

150

100

STD95N4LF3 Electrical characteristics

Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations

VGS

(V)

12

10

VDD=20V

V

GS=10V

I

D=80A

8

6

4

2

0

0

10

20

30

40

50

Q

g(nC)

AM01533v1

(pF)

5000

4500

4000

3500

3000

2500

2000

1500
1000

500

C

AM01534v1

f=1MHz
VDS=25V
V

GS=0

Ciss

Coss

0

Crss

0

5

10

15

20

25

30 35

V

DS(V)

Figure 10. Normalized gate threshold voltage

VGS(th)
(norm)

vs temperature

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

-50

AM01535v1

T

50

0

100

150

J(°C)

Figure 12. Source-drain diode forward

characteristics

Figure 11. Normalized on resistance vs

temperature

R

DS(on)

(norm)

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

-50

50

0

100

150

AM01536v1

T

J

(°C)

Doc ID 15372 Rev 2 7/16

Test circuits STD95N4LF3

3 Test circuits

Figure 13. Switching times test circuit for

PW

resistive load

VGS

VD

RG

RL

D.U.T.

2200

µF

3.3
µF

AM01468v1

V

DD

Figure 15. Test circuit for inductive load

G

25

Ω

switching and diode recovery times

A

D

D.U. T.

S

B

G

R

A

FAST
DIODE

B

A

L=100µH

B

D

G

S

3.3

µF

1000

µF

V

DD

Figure 14. Gate charge test circuit

V

i=20V=VGMAX

PW

2200
µF

1kΩ

12V

IG=CONST

2.7kΩ

47kΩ

47kΩ

100Ω

100nF

D.U.T.

AM01469v1

Figure 16. Unclamped inductive load test

circuit

L

VD

ID

Vi

D.U. T.

2200

µF

3.3
µF

1kΩ

VDD

V

VDD

G

Pw

AM01470v1

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

V(BR)DSS

VD

IDM

ID

VDD

VDD

AM01472v1

0

0

10%

tdon

ton

90%

tr

10%

V

GS

8/16 Doc ID 15372 Rev 2

VDS

90%

tdoff

AM01471v1

toff

tf

90%

10%

AM01473v1

STD95N4LF3 Test circuits

Figure 19. Diode reverse recovery waveform

Doc ID 15372 Rev 2 9/16

Package mechanical data STD95N4LF3

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK

®

packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.

10/16 Doc ID 15372 Rev 2

STD95N4LF3 Package mechanical data

DIM.

mm.

min. typ max.

A 2.20 2.40

A1 0.901.10

A2 0.03 0.23

b 0.64 0.90

b4 5.20 5.40

c 0.45 0.60

c2 0.48 0.60

D 6.00 6.20

D1 5.10

E 6.40 6.60

E1 4.70

e2.28

e1 4.40 4.60

H 9.35 10.10

L1

L1 2.80

L2 0.80

L4 0.60 1

R0.20

V2 0

o

8

o

TO-252 (DPAK) mechanical data

0068772_G

Doc ID 15372 Rev 2 11/16

Package mechanical data STD95N4LF3

DPAK (TO-263) mechanical data

Dim

Min Typ Max Min Typ Max

hcnimm

181.0371.006.404.4A

900.0100.032.030.01A

730.0720.039.007.0b

760.0540.007.141.12b

4.0c

420.0710.006.05

350.0840.063.132.12c

863.0253.053.959.8D

592.005.71D

904.0493.004.0101E

433.005.81E

1.045.2e

82.588.41e

802.0291.0

426.0095.058.5151H

601.0990.096.294.21J

011.0090.097.292.2L

550.050.004.172.11L

3.12L

960.0150.057.10

610.04.0R
°8°0°8°02V

0079457_M

12/16 Doc ID 15372 Rev 2

STD95N4LF3 Packing mechanical data

5 Packing mechanical data

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT

REEL MECHANICAL DATA

DIM.

A 330 12.992

B 1.5 0.059

C12.8 13.2 0.504 0.520

D 20.2 0795

G 24.4 26.4 0.960 1.039

N 100 3.937

T 30.4 1.197

TAPE MECHANICAL DATA

DIM.

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

A0 10.5 10.7 0.413 0.421

B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E1.651.85 0.065 0.073

F 11. 4 11.6 0.449 0.456

K0 4.8 5.0 0.189 0.197

P0 3.9 4.1 0.153 0.161

P1 11.9 12.1 0.468 0.476

P2 1.9 2.1 0.075 0.082

R 50 1.574

T0.250.35 0.0098 0.0137

W 23.7 24.3 0.933 0.956

mm inch

MIN. MAX. MIN. MAX.

1000 1000

Doc ID 15372 Rev 2 13/16

Packing mechanical data STD95N4LF3

DPAK FOOTPRINT

All dimensions are in millimeters

TAPE AND REEL SHIPMENT

REEL MECHANICAL DATA

DIM.

A 330 12.992

B 1.5 0.059

C 12.8 13.2 0.504 0.520

D 20.2 0.795

G 16.4 18.4 0.645 0.724

N 50 1.968

T 22.4 0.881

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 6.8 7 0.267 0.275

B0 10.4 10.6 0.409 0.417

B1 12.1 0.476

D 1.5 1.6 0.059 0.063

D1 1.5 0.059

E 1.65 1.85 0.065 0.073

F 7.4 7.6 0.291 0.299

K0 2.55 2.75 0.100 0.108

P0 3.9 4.1 0.153 0.161

P1 7.9 8.1 0.311 0.319

P2 1.9 2.1 0.075 0.082

R 40 1.574

W 15.7 16.3 0.618 0.641

14/16 Doc ID 15372 Rev 2

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

2500 2500

STD95N4LF3 Revision history

6 Revision history

Table 7. Document revision history

Date Revision Changes

11-Feb-2009 1 First release

23-Jul-2009 2 Marking on device summary has been corrected.

Doc ID 15372 Rev 2 15/16

STD95N4LF3

Please Read Carefully:

Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.

All ST products are sold pursuant to ST’s terms and conditions of sale.

Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.

UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.

UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.

Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.

ST and the ST logo are trademarks or registered trademarks of ST in various countries.

Information in this document supersedes and replaces all information previously supplied.

The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.

© 2009 STMicroelectronics - All rights reserved

Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -

STMicroelectronics group of companies

Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America

www.st.com

16/16 Doc ID 15372 Rev 2